臺灣博碩士論文加值系統

現今AMLCD發展趨勢是朝向高解析度，高偵速，和大尺寸，而現在大部分的液晶螢幕都在4k*2k的解析度，在對應的240Hz和10M個pixel下，需要的mobility是達到10-100左右。因此要達到更高的解析度和大的面板尺寸的話，mobility的提升相當重要，所以傳統型的薄膜電晶體不被採用的幾項原因是：電子遷移率較低、較高的操作電壓和次臨界擺幅、較大的臨界電壓、較高的製程溫度等等，突顯了傳統薄膜電晶體已不滿足現今追求的高解析度、高電性、高電子遷移率和低溫製程等需求。
非晶銦鎵鋅氧薄膜電晶體(a-IGZO TFTs)是相當具有競爭力的薄膜電晶體。它最受矚目的原因是: 具有高載子遷移率之特性，並兼具低溫沉積、可撓性、透明性、均勻度佳等優點。且作為薄膜電晶體主動層的研究最為重視。
本論文探討的低溫製程技術包含大氣常壓電漿輔助化學氣相沉積系統來沉積銦鎵鋅氧薄膜因為具備大面積沉積、不需要真空設備、室溫下進行沉積等好處。以及使用低溫微波退火和快速熱退火兩種退火系統來改善非晶銦鎵鋅氧薄膜電晶體的元件特性，並且都達到低熱預算的效果。此外，由於微波退火為快速直接性且材料選擇性的退火相較於快速熱退火，使製程具有較低熱預算、較短時間、較節能、以滿足低溫製程的需求，並且配合大氣常壓電漿輔助化學氣相沉積系統可以提升元件的產能。
實驗結果顯示，我們成功製作微波退火和快速熱退火處理都對氧化銦鎵鋅主動層薄膜電晶體具有不錯的效果。在微波退火條件為1200瓦100秒下，具有較高的電子遷移率11.3 cm2/(V·S)、較小的次臨界擺伏170 mV/dec.、高的開關電流比 1.8x107，而快速熱退火條件為 450度30秒下，具有較高的電子遷移率14.13 cm2/(V·S)、較小的次臨界擺伏166 mV/dec.、高的開關電流比3.8x107。兩種退火處理後的元件性能良好且相似，因此我們透過XRD（X-射線繞射分析）來解釋微波退火所供給的熱預算是少於快速熱退火其反映出微波退火技術是更有潛力用於未來3D顯示器對低溫製程的需求。

AMLCD's development trend today is toward high resolution, high detection speed and large size. Most LCD screens now have a resolution of 4k * 2k. In the corresponding 240Hz and 10M pixels, the required mobility is as high as 10. -100 or so. Therefore, in order to achieve higher resolution and larger panel size, the improvement of the mobility is very important, so several reasons not to use conventional thin film transistors are: low electron mobility, high operating voltage and critical swing, and more. High threshold voltages, higher process temperatures, etc., highlight that traditional thin-film transistors cannot meet the current high-resolution, high-electricity, high-electron mobility and low-temperature process requirements.
a-IGZO TFT is a competitive TFT. The most significant reasons are: high carrier mobility, combined with low temperature deposition, flexibility, transparency, and good uniformity. As the active layer of the thin film transistor, the most attention has been paid.
The low-temperature process technologies discussed in this paper include atmospheric plasma-assisted chemical vapor deposition systems. Due to the advantages of large-area deposition, no vacuum equipment, and room-temperature deposition, indium gallium zinc oxide films can be deposited. The low-temperature microwave annealing and rapid thermal annealing systems are used to improve the device characteristics of the amorphous indium gallium zinc oxide thin film transistor, and both achieve a low thermal budget. In addition, since the microwave annealing is fast and direct, and the material selective annealing is faster than the rapid thermal annealing, the process has a lower thermal budget, a shorter time, a higher energy efficiency, to meet the needs of low temperature processing, and cooperate atmospheric plasma-assisted chemical vapor deposition systems can increase the productivity of devices.
The experimental results show that the microwave annealing and rapid thermal annealing process have a good effect on the indium gallium zinc active layer thin film transistor. Under a microwave annealing condition of 1200 W for 100 seconds, it has a high electron mobility of 11.3 cm 2 /(V·S), a small sub-threshold swing of 170 mV/dec, and a high Ion/Ioff current ratio of 1.8×107. The rapid thermal annealing conditions were 450℃ and 30 seconds, with a high electron mobility of 14.13 cm 2 /(V·S), a small sub-threshold of 166 mV/dec, and a high Ion/Ioff current ratio of 3.8 x 107. The performance of both annealing devices is very good and similar, so we explained by XRD (X-ray diffraction analysis) that the thermal budget provided by microwave annealing is smaller than rapid thermal annealing, which reflects the potential of microwave annealing technology. Low temperature processing is needed in future 3D displays.

Abstract (Chinese) III
Abstract (English) V
Acknowledgement VIII
Contents X
Table Cations XII
Figure Captions XIII
Chapter 1 Introduction - 1 -
1.1 Introduction of thin film transistors(TFTS) - 1 -
1.2 Amorphous In-Ga-Zn-O (a-IGZO) active channel layer - 2 -
1.3 High-k dielectric material - 5 -
1.3.1 Background of high-k dielectric material - 5 -
1.3.2 Advantages of high-k dielectric material - 7 -
1.3.3 High-k dielectric material options - 8 -
1.4 Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition (AP-PECVD) - 11 -
1.5 Microwave Annealing (MWA) - 12 -
1.5.1 Introduction of Microwave - 12 -
1.5.2 The mechanism of Microwave Annealing - 14 -
1.5.3 Advantages of Microwave Annealing - 17 -
1.6 Motivation - 18 -
Chapter 2 Literature Reviews - 30 -
2.1 The different techniques to deposit a-IGZO channel - 30 -
2.1.1 Solution-based atmospheric pressure deposition - 30 -
2.1.2 Atmospheric pressure plasma jet (APPJ) - 31 -
2.2 The low thermal budget annealing - 32 -
Chapter 3 Experiment details - 38 -
3.1 HfO2 capacitor fabricated process - 38 -
3.2 The a-IGZO TFT fabricated process - 38 -
3.3 The technology of annealing process - 40 -
3.3.1 The low temperature microwave annealing system - 40 -
Chapter 4 Results and discussions - 46 -
4.1 The a-IGZO thin films transistors by microwave annealing - 46 -
4.1.1 The Hall measurement of a-IGZO thin films - 46 -
4.1.2 The scanning electron microscope and atomic force microscope (AFM) analysis of a-IGZO thin films - 48 -
4.1.3 The X-ray diffraction (XRD) analysis of a-IGZO thin films - 48 -
4.1.4 The X-ray photoelectron spectroscopy (XPS) analysis of a-IGZO thin films - 49 -
4.1.5 The electrical characteristics of a-IGZO thin films - 50 -
4.2 The a-IGZO thin films transistors by rapid thermal annealing - 53 -
4.2.1 The Hall measurement of a-IGZO thin films - 53 -
4.2.2 The scanning electron microscope and atomic force microscope (AFM) analysis of a-IGZO thin films - 53 -
4.2.3 The X-ray diffraction (XRD) analysis of a-IGZO thin films - 54 -
4.2.4 The X-ray photoelectron spectroscopy (XPS) analysis of a-IGZO thin films - 54 -
4.2.5 The electrical characteristics of a-IGZO thin films - 55 -
4.3 Comparison - 56 -
Chapter 5 Conclusions and Future Work - 81 -
5.1 Conclusions - 81 -
5.2 Future Work - 82 -
References - 85 -

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Chapter 2

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[2.13] Tzu-Hung Liu, Po-Yuan Chiu, Yen Chuang, Chia-You Liu, Chang-Hong Shen, Guang-Li Luo, and Jiun-Yun Li , Member, IEEE, “High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing,” IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 4, APRIL 2018.

Chapter 3

[3.1] L. F. Teng, P. T. Liu, Y. J. Lo, Y. J. Lee, “Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor”, Applied Physics Letters, vol.101, p. 132901, 2012.

Chapter 4

[4.1] S. W. Tsao, T. C. Chang, S. Y. Huang, M. C. Chen, S. C. Chen, C. T. Tsai, Y. J. Kuo, Y. C. Chen, and W. C. Wu, “Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors,” Solid-State Electron, vol. 54, no. 12, pp. 1497–1499, Dec. 2010.
[4.2] Ji Hoon Park, Yeong-gyu Kim, Seokhyun Yoon, Seonghwan Hong, and Hyun Jae Kim, “Simple Method to Enhance Positive Bias Stress Stability of InGaZnO Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer,” ACS Appl. Mater. Interfaces 2014, 6, 21363−21368