臺灣博碩士論文加值系統

摘要

近年來隨著生活水準的提高,無線通訊(wireless communication)市場快速成長,無論是學術界或是工業界皆無不極力地發展無線通訊這高科技。而微波元件則是通訊系統中最重要的骨架。以矽為基底的矽鍺異質接面雙載子電晶體(SiGe HBT),除了比傳統的矽電晶體(Si BJT)有較高的效能外,也比三五族(III-V)複合材料的微波元件有較佳的低成本效益。
本篇論文之重點是在研究以矽為基底的矽鍺異質接面雙載子電晶體的小訊號等效電路模型,以及分析元件參數特性在不同偏壓條件以及幾何結構下的變異。論文中使用的小訊號等效模型除了改善電晶體基底部分萃取的方式,更近一步地簡化了萃取本質參數的公式。此外探討如何有效利用和準確預測電晶體因偏壓的改變產生的非理想現象以及尺寸縮小的情形下,元件參數變化情形。最後的部份討論在不同的結構中,對於電晶體特性的改善。利用既定的製程中,如何利用幾何結構的分析,使元件得到最佳化的效果。

Contents

Abstract (Chinese) i
Abstract (English) iii
Acknowledgement v
Contents vi
Table Captions viii
Figure Captions ix

Chapter 1
Introduction

1.1 Background 1
1.2 Organization 3

Fig. 1-1 4

Chapter 2
Small-Signal Model Parameter Extraction Method

2.1 Extraction of Extrinsic Elements 5
2.1.1 Extraction of pad inductances and series resistances 5
2.1.2 Extraction of Parasitic Capacitances 7
2.2 Extraction of Substrate Network Parameters 8
2.3 Extraction of Intrinsic Circuit Elements 11
2.3.1 Extraction of Rbi, Cbci, C��, and Cbcx 12
2.3.2 Accuracy Improvement of Rbi, Cbci and Cbcx 14
2.3.3 Extraction of R��, gm0 and ���n�n�n�n�n�n�n�n�n�n�n�n 15
2.3.4 Discrepancy between measurement and simulation 16

Table 2-1 17
Figure 2-1 – 2-22 18


Chapter 3
Bias Dependences of Intrinsic Model Parameters

3.1 Cutoff Frequency and Maximum Oscillation Frequency 40
3.2 Intrinsic Transconductance and Excess Phase Delay 41
3.3 Intrinsic Base-Emitter Resistance and capacitance 43
3.4 Intrinsic Base-Collector capacitance 43
3.4 Intrinsic Base Resistance 44

Fig. 3-1 – 3-6 46

Chapter 4
Geometrical Effect on Model Parameters

4.1 Scaling Effect of Emitter Length 51
4.2 Scaling Effect of Emitter Width 52
4.3 Scaling Effect of Emitter Finger Number 53
4.4 Cell Number Effect 53
4.5 Geometrical Effect of Collector and Substrate 54

Table 4-1 – 4-4 56
Fig. 4-1 – 4-15 60

Chapter 5
Conclusion and Future Work

5.1 Conclusion 76
5.2 Future Work 77

References 78

References

[1] M. Case, S. A. Maas, L. Larson, D. Rensch, D. Harame, and B. Meyerson, “An X-band monolithic active mixer in SiGe HBT technology,” in IEEE MTT-S Dig., 1996, pp. 655–658.
[2] J. S. Rieh, L. H. Lu, L. P. B. Katehi, P. Bhattacharya, E. T. Croke, G. E. Ponchak, and S. A. Alterovitz, “X- and Ku-band amplifiers based on Si/SiGe HBT’s and micromachined lumped components,” IEEE Trans. Microw. Theory Tech., vol. 46, no. 5, pp. 685–694, May 1998.
[3] U. Schaper and B. Holzapfi, “Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured parameters,” IEEE Trans. Electron Devices, vol. 43, pp. 493-498, Mar. 1995.
[4] D. Costa, W. L. Liu, and J. S. Harris, “Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit,” IEEE Trans. Electron Devices, vol. 38, pp. 2018-2024, Sept. 1991.
[5] D. R. Pehlke and D. Pavlidis, “Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data,” IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2367-2373,
Dec. 1992.
[6] D. Wu, D. L. Miller, M. Fukuda, and Y. Yun, “Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters,” GaAs IC Symp. 93 Tech. Dig., 1993. pp. 259-262.
[7] T. K. Johansen, J. Vidkjær, and Viktor Krozer, “Substrate Effects in SiGe HBT Modeling,” in Proc. GAAS Conf., 2003, pp. 445–448.
[8] T. H. Teo, Y. Z. Xiong, J. S. Fu, H. Liao, J. Shi, M. Yu, and W. Li, “Systematic Direct Parameter Extraction with Substrate Network of SiGe HBT,” in Proc. RFIC Conf., 2004, pp. 603–606.
[9] U. Basaran, N. Wieser, G. Feiler, and M. Berroth, “Small-Signal and High-Frequency Noise Modeling of SiGe HBTs,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 3, pp. 919–928, Mar. 2005.
[10] K. Lee, K. Choi, S.-H. Kook, D.-H. Cho, K.-W. Park, and B. Kim, “Direct Parameter Extraction of SiGe HBTs for the VBIC Bipolar Compact Model”, IEEE Trans. Electron Devices, vol. 52, no. 3, pp. 375–384, Mar. 2005.
[11] K.-M. Chen, A.-S. Peng, G.-W. Huang, H.-Y. Chen, S.-Y. Huang, C.-Y. Chang, H.-C. Tseng, T.-L. Hsu, and V. Liang, “Linearity and Power Characteristics of SiGe HBTs at High Temperatures for RF Applications”, IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1452–1458, Jul. 2005.

[12] S. Lee, C. S. Kim, and H. K. Yu, “A Small-Signal RF Model and Its Parameter Extraction for Substrate Effects in RF MOSFETs”, IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1374–1379, Jul. 2001.
[13] Y. Govert, P. J. Tasker, and K. H. Bachem, “A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor,” IEEE Trans. Microw. Theory Tech., vol. 45, no. 1, pp. 149–153, Jan. 1997.
[14] B. Li, S. Prasad, L. W. Yang, and S. C. Wang, “A semianalytical parameter-extraction procedure for HBT equivalent circuit,” IEEE Trans. Microw. Theory Tech., vol. 46, no. 10, pp. 1427–1435, Oct. 1998.
[15] U. Basaran, and M. Berroth, “High Frequency Noise Modeling of SiGe HBTs Using Direct Parameter Extraction Technique”, in IEEE MTT-S Int. Dig., Jun. 2002, pp. 189–195.
[16] S. Bousnina, P. Mandeville, A. B. Kouki, R. Surridge, and F. M. Ghannouchi, “Direct Parameter-Extraction Method for HBT Small-Signal Model,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 2, pp. 529–536, Feb. 2002.
[17] B. Sheinman, E. Wasige, M. Rudolph, R. Doerner, V. Sidorov, S. Cohen, and D. Ritter, “A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 12, pp. 2804–2810, Dec. 2002.
[18] F. Lenk, and M. Rudolph, “New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance”, in IEEE MTT-S Int. Dig., Jun. 2002, pp. 725–728.
[19] H.-Y. Chen, K.-M. Chen, G.-W. Huang, C.-Y. Chang, “A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit”, IEICE Trans. Electronics , vol. E88-C, no. 6, pp. 1133–1141, Jun. 2005.
[20] I. Kwon, M. Je, K. Lee, and H. Shin, “A Simple and Analytical Parameter-Extraction Method of a Microwave MOSFET,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 6, pp. 1503–1509, Jun. 2002.
[21] Seonghearn Lee, “Improved Modeling for Transit Time and Excess Phase Delay of Advanced Bipolar Transistors at high Current Densities,” MWSCAS 2001. Proceeding of the 44th IEEE
[22] Bahman Meskoob, Sheila Prasad, Mankuan Vai, James C. Vicek, Hiroya Sato, and Clifton G. Fonstad, “Bias-Dependence of the Intrinsic Element Values of InGaAs/InAlAs/Inp inverted Heterjunction Bipolar Transistor,” IEEE Trans. Microw. Theory Tech, vol. 40, no 5, May 1992.
[23] Stanley Wolf, “Sicicon Processing For The VLSI ERA vol 2: pp.474”
[24] Shiming Zhang, Guofu Niu, John D. Cressler, Alvin J. Joseph*. Greg Freemanpp, and D.L. Garame*, “The Effects of Geometrical Scaling on the RF Performance of SiGe HBTs,” IEEE 2000
[25] Martins, E. Swart, J.W. Akpinar, M. Wolff,U. UNCAMP, Sao Paulo.”A new thermal model for HBT RF circuit simulation” SEMO/IEEE MTT-S IMOC”97 Proceedings