臺灣博碩士論文加值系統

　　本研究主要探討多種硫化銅結構複合氧化銅奈米顆粒，在ITO基板上完成非酶葡萄糖感測元件。感測材料形貌的變化及薄膜厚度對感測器之靈敏度與偵測範圍有很大的影響。本研究利用電鍍在ITO基板上製備不同的硫化銅奈米結構，再以射頻濺鍍系統修飾氧化銅奈米顆粒，完成氧化銅奈米顆粒／硫化銅奈米結構之雙層感測材料。透過電鍍溶液濃度及電鍍時間的調變，來控制奈米材料形貌及樣品的厚度。並分析單層與雙層複合結構之差異，提升元件對葡萄糖之感測表現。

實驗結果指出，以0.15M五水合硫代硫酸鈉作為電鍍溶液，電鍍時間控制為900秒時所製備的硫化銅結構，對於葡萄糖具有最佳的感測能力。其靈敏度為132.39μAmM-1cm-2。在表面修飾氧化銅奈米顆粒後，其靈敏度更能進一步提升至139.86μAmM-1cm-2。結果顯示氧化銅奈米顆粒／硫化銅奈米結構之雙層複合結構對葡萄糖有較高的感測能力外，其感測範圍更廣。對於應用在生醫檢測方面，具有相當大的潛力。

In this thesis, various copper sulfide (CuS) nanostructures composited with copper oxide (CuO) nanoparticles have been discussed. Nanocomposites are grown on the ITO substrates for non-enzymatic glucose sensing. Different morphologies and thicknesses of the sensing materials have significant effects to the sensitivity and the detection range of the sensors. Various CuS nanostructures are electroplated on the ITO substrate in this study. CuO nanoparticles are decorated on the surface of CuS for modification by RF sputtering system. The CuO/CuS nanocomposites are completed as a double-layered sensing material. By adjusting the concentration of the plating solution and changing the plating time, the morphology and the thickness of CuS can be controlled. We analyze the differences of the sensing material before and after the CuO modification. Sensing performances of the devices to glucose are also been compared.

Based on the results, the sensing material CuS has the best performances by fabricating with 0.15M sodium thiosulfate pentahydrate under plating time of 900 s. Its sensitivity is 132.39μAmM-1cm-2. After the CuO modification, the sensitivity is further improved to 139.86μAmM-1cm-2. The results show that the CuO/CuS nanocomposites have higher sensing ability and wider detection range to glucose. It has great potential for biomedical detection.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 vi
圖目錄 ix
表目錄 xvii
第一章 緒論 1
1-1 前言 1
1-2 電化學感測器比較 2
1-3 材料介紹 5
1-3-1 硫化銅(CuS) 5
1-3-2 氧化銅(CuO) 5
1-4 論文架構 6
第二章 理論分析 7
2-1 奈米結構生長原理 7
2-1-1 電鍍生長法 7
2-1-2 射頻磁控濺鍍成長法 8
2-2 材料成長機制 8
2-2-1 硫化銅(CuS)生長原理 8
2-2-2 氧化銅(CuO)生長原理 10
2-3電化學感測原理 10
2-3-1 電化學法原理 10
2-3-2 非酶感測器 12
2-4電化學分析 13
2-4-1 循環伏安法 13
2-4-2 時變安培法 14
2-5 電化學電極原理 14
2-5-1 工作電極 14
2-5-2 參考電極 15
2-5-3 輔助電極 15
2-6 材料分析原理 16
2-6-1 掃描式電子顯微鏡(FE-SEM) 16
2-6-2 X光繞射儀(XRD) 16
2-6-3 能量色散X射線光譜(EDS) 17
2-7 材料感測機制 17
2-7-1 硫化銅對葡萄糖感測機制 17
2-7-2 氧化銅對葡萄糖感測機制 18
第三章 實驗方法與儀器 20
3-1 實驗藥品與材料 20
3-2 薄膜分析儀器 21
3-2-1 掃描式電子顯微鏡(FE-SEM) 21
3-2-2 X光繞射儀(XRD) 21
3-2-3 能量色散X射線光譜(EDS) 22
3-3 電化學工作站 22
3-3-1 電化學分析 22
3-3-2 電鍍生長 22
3-4 製程步驟 23
3-4-1 基板清洗 23
3-4-2 電鍍生成法成長硫化銅 24
3-4-3 濺鍍沉積法修飾氧化銅 25
第四章 結果與討論 26
4-1 生長參數 26
4-1-1 硫化銅生長參數 26
4-1-2 氧化銅生長參數 26
4-2 材料參數調變分析 27
4-2-1 硫化銅成長結構結果與討論 27
4-2-2 氧化銅複合硫化銅成長結構結果與討論 32
4-3 電化學循環伏安法分析 35
4-3-1 硫化銅感測葡萄糖分析 35
4-3-2 氧化銅複合硫化銅感測葡萄糖分析 39
4-3-3 掃描速率分析 42
4-4 電化學時變安培法分析 43
4-4-1 硫化銅感測葡萄糖靈敏度分析 43
4-4-2 氧化銅複合硫化銅感測葡萄糖靈敏度分析 55
4-4-3 干擾物量測 61
4-5 研究結果比較 61
第五章 結論與未來展望 63
5-1 實驗結論 63
5-2 未來展望 64
參考文獻 65
附表 72
附圖 76

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