臺灣博碩士論文加值系統

本篇論文主要是討論設計於玻璃基板上進行非晶矽薄膜太陽能電池(Amorphous silicon solar cell )各項特性探討。包括P/N juntion傳導層、鋁電極、透明導電膜等各層之製作電性分析、及組成薄膜太陽能電池之電性測試。 本研究是利用離子植入機、電子鎗蒸鍍機、PECVD以及曝光機等，在無鈉玻璃上，製作ITO透明導電膜、鋁電極及P/N juntion等。佐以CW 532nm雷射對各薄膜進行退火再結晶製程，以提昇在玻璃基板上製作非晶矽太陽能電池的效率。 本研究已成功在低鈉玻璃基板上，製做非晶矽薄膜太陽能電池，但效率尚偏低。未來可循求材料與製程的最佳搭配，才能將太陽電池電性提昇至商品化規模。

The purpose of this paper is for the amorphous silicon solar cell design and performance analyses on the low sodium glass substrate. The electric conductive and characteristics analyses were tested for the P/N junction, aluminum electrode as well as the transparent ITO layer. The thin film layers of P/N junction, aluminum electrode as well as the transparent ITO were obtained by ion implantation, E-gun evaporation and Plasma Enhanced Chemical Vapor Deposition (PECVD) methods, respectively. In order to raise the performance efficiency of solar cell on the glass substrate, each layer was annealed by 532nm CO2 laser for re-crystallization. The fabrication processes on the low sodium glass were developed, although the efficiency is still too low. We are looking forwards to get both of the material and the process to be the best collocation onto promotion of the electricity of the solar cell to the commercialized scale in the near future.

目錄中文摘要………………………………………………………………ⅠAbstract………………………………………………………………Ⅱ誌謝……………………………………………………………………Ⅲ目錄……………………………………………………………………Ⅳ表目錄…………………………………………………………………Ⅶ圖目錄…………………………………………………………………Ⅷ第一章 緒論.............................................1 1.1 前言.............................................1 1.2 研究動機.........................................1 1.2.1 沿革.........................................1 1.2.2 動機.........................................3 1.3 文獻回顧.........................................3 1.3.1 薄膜沉積.....................................3 1.3.2 物理氣相沉積(PVD) ............................4 1.3.3 蒸鍍原理(Evaporation) .........................7 1.3.4 濺鍍原理(Sputter) ............................7 1.3.5 化學氣相沉積(CVD) ............................9 1.4 研究目的與內容..................................13 1.5 矽薄膜太陽能電池演進............................13 第二章 太陽電池工作原理與製程.......................15 2.1 太陽電池的原理與製程簡介.......................15 2.1.1 太陽電池光電轉換基本原理....................16 2.1.2 非晶矽薄膜太陽電池基本結構原理..............20 2.2 離子植入........................................24 2.2.1 擴散與離子植入之作用........................24 2.2.2 離子植入參數................................26 2.2.3 植入離子之分佈..............................29 2.3 雷射退火........................................30 2.3.1 雷射退火之應用..............................30 2.4 使用設備簡介....................................34 2.4.1 電子槍（E-gun）蒸鍍設備.....................35 2.4.2 定溫控制電子槍（E-gun）蒸鍍設備.............36 2.4.3 表面形狀測定器- 全自動量測系統（ET-4000）...37 2.4.4 電漿化學氣相沉積(PECVD).....................38 2.4.5 可控溫烤箱（Oven）..........................39 2.4.6 可控溫高溫爐管設備（Furnace）...............40 2.4.7 化學清洗槽（Wet Bench）....................41 2.4.8 微影曝光機.................................42 2.4.9 Implantation E500HP-中電流離子佈植機 ....43 2.4.10 CW 532nm綠光雷射退火 ....................44 2.4.11電性量測儀(KEITHLEY 4200) ................46 2.4.12電子顯微鏡 .................................48 第三章 玻璃基板上非晶矽太陽電池製程設計製作流程........49 3.1 製作緩衝層......................................50 3.2 製作ITO透明導電層..............................52 3.2 製作a-Si(P、i、N三層)..........................53 第四章 分析與討論 .....................................67 4.1 量測儀器準備 ..................................67 4.2 雷射退火特性分析 ..............................67 4.3 非晶矽薄膜太陽電池量測之電壓變化 ..............72 第五章 結論與展望......................................80 5.1 結論 ...........................................80 5.2 展望 ...........................................81 參考文獻.................................................82

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