臺灣博碩士論文加值系統

本研究主要是探討針對使用低成本、低溫度的水熱法來成長硫化鎘及硫化鋅半導體薄膜作為p-si異質接面太陽能電池的n型接面。製備硫化鎘與硫化鋅薄膜，反應物濃度和退火條件扮演非常重要的角色。良好穿透率，均勻性，晶體結構的CdS與ZnS薄膜，分別藉由表面輪廓儀、場發射掃描式電子顯微鏡、X 光繞射儀、能量散布分析儀與紫外光/可見光光譜儀來觀察薄膜厚度、表面及剖面形貌、結構特性、成分與光學穿透性等，藉此了解此種薄膜材料的基本特性，適合作為p-si異質接面太陽能電池的可能性。因此，以製備Al/AZO/n-CdS/p-Si/Al 元件為目標。硫化鋅薄膜穿透率穩定的在400nm以上超過85％。表面形貌薄膜均勻。然而，有一些白點在薄膜上，可能是混合膠體粒子沉積硫化鋅，這些粒子可能是ZnO或Zn(OH)2。

For this study which used low-cost, low-temperature chemical bath deposition(CBD) to grow cadmium sulfide(CdS) and zinc sulfide(ZnS) thin films semiconductor n-type heterojunction application of p-Si solar cells. Preparation of CdS and ZnS thin films, the concentration and annealing conditions play a very important role. Good transmittance, uniformity, crystal structure of CdS/ZnS thin films by field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), energy dispersive spectroscopy(EDS) and UV / visible spectrometer to observe the film thickness, surface and profile morphology, structural characteristics, composition and optical penetration, etc., to understand the basic characteristics of such thin films, suitable for p-si heterojunction solar possibilities. Therefore, the preparation of Al / AZO / n-CdS / p-Si / Al device as the goal, to improve energy conversion efficiency. Stability of zinc sulfide thin film transmittance over 85% more than in the 400nm. Surface film uniformity. However, there are some white spots in the film may be deposited zinc sulfide mixed colloidal particles, these particles may be ZnO or Zn(OH)2. This study found that the impedance change at different concentrations of zinc sulfate, and PH values have a significant impact on transmittance.

摘要………………………………………………………………………i
Abstract…………………………………………………………………ii
誌謝……………………………………………………………………iii
表目錄……………………………………………………………………ix
圖目錄……………………………………………………………………xi
第一章 緒論………………………………………………………………1
1.1前言……………………………………………………………………1
1.2 太陽能電池…………………………………………………………4
1.2.1 半導體……………………………………………………………4
1.2.2 p-n 接面太陽能電池……………………………………………8
1.2.3 太陽能電池運作原理……………………………………………11
1.3研究動機與目的……………………………………………………13
第二章 理論基礎與文獻回顧…………………………………………14
2.1 CdS與ZnS結構與應用……………………………………………14
2.2 薄膜成長機制……………………………………………………17
2.3 化學水浴沉積法 …………………………………………………19
2.3.1 化學水浴沉積法介紹…………………………………………19
2.4 半導體薄膜光學性質原理………………………………………21
2.4.1 透明導電金屬氧化物薄膜能隙計算…………………………21
第三章 實驗方法及實驗分析設備……………………………………23
3.1實驗流程……………………………………………………………24
3.1.1 元件製作流程 …………………………………………………27
3.2 實驗CBD製程………………………………………………………27
3.2.1實驗材料…………………………………………………………29
3.2.2 基板清洗…………………………………………………………30
3.3硫化鎘薄膜介紹……………………………………………………32
3.3.1 硫化鎘薄膜製備…………………………………………………32
3.3.2 硫化鎘薄膜化學反應機制………………………………………33
3.5.3 退火熱處理對CdS薄膜性質研究………………………………33
3.6 硫化鋅薄膜介紹 …………………………………………………34
3.6.1 硫化鋅薄膜製備…………………………………………………34
3.6.2 硫化鋅薄膜化學反應機制………………………………………35
3.6.3退火熱處理對ZnS薄膜性質研究…………………………………35
3.7 濺鍍原理……………………………………………………………35
3.8元件效率量測………………………………………………………37
3.8.1 CdS與ZnS薄膜厚度對效率之影響………………………………37
3.8.2退火對CdS與ZnS 薄膜元件效率之影響…………………………38
3.9 實驗儀器設備………………………………………………………38
3.9.1 場發射掃描式電子顯微鏡………………………………………38
3.9.2 能量散佈分析儀…………………………………………………38
3.9.3 表面輪廓儀………………………………………………………39
3.9.4 多功能薄膜X 光繞射儀…………………………………………39
3.9.5 可見－紫外光光譜分析儀………………………………………40
3.9.6 原子力顯微鏡 …………………………………………………41
第四章 結果與討論……………………………………………………46
4.1 CBD 法製備CdS 薄膜……………………………………………46
4.1.1 CdS薄膜厚度、表面形貌、結構與成份分析…………………46
4.1.2 硫化鎘薄膜光學特性……………………………………………52
4.1.3 硫化鎘薄膜之電性………………………………………………54
4.1.4 CdS薄膜晶相與成份分析………………………………………54
4.1.5 熱處理溫度對CdS薄膜表面之影響……………………………56
4.1.6 CdS薄膜熱處理後的光學與能隙分析…………………………63
4.1.7 CdS薄膜熱處理不同溫度後的晶相與成份分析………………67
4.2 CBD 法製備ZnS 薄膜……………………………………………72
4.2.1 ZnS薄膜厚度、表面形貌、結構與成份分析…………………72
4.2.2硫化鋅薄膜光學特性……………………………………………77
4.2.3 硫化鋅薄膜之電性………………………………………………78
4.2.4 ZnS薄膜晶相與成份分析………………………………………78
4.2.5 退火溫度對硫化鋅薄膜的影響…………………………………80
4.2.6 ZnS薄膜熱處理後的光學及能隙分析…………………………85
4.2.7 ZnS薄膜熱處理後的晶相與成份分析…………………………88
4.3 應用於P-SI異質接面太陽能電池………………………………92
4.4 P-SI異質接面太陽能電池元件I-V量測………………………95
4.4.1成長10分鐘CdS與退火200℃、300℃ 及400℃元件特性………95
4.4.2成長20分鐘CdS與退火200℃、300℃ 及400℃元件特性………97
4.4.3成長30分鐘CdS與退火200℃、300℃ 及400℃元件特性……100
4.4.4成長40分鐘CdS與退火200℃、300℃ 及400℃元件特性……102
4.4.5成長30-60分鐘ZnS元件特性……………………………………105
第五章 結論及未來建議………………………………………………107
5.1 結論………………………………………………………………107
5.2 未來建議…………………………………………………………108
參考文獻………………………………………………………………109

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