臺灣博碩士論文加值系統

氮化鎵的高電子遷移率電晶體在近年來發展成熟，除了穩定性逐年提高，更適合於不同需求的規格可供選擇，在許多方面都比現有的矽功率開關還要有更佳的特性，得以使電路操作在更高的頻率上。本文研製一數位控制於高頻的電源模組，此架構使用全橋諧振轉換器。當開關切換於高頻狀態時，因電路上的佈線，會產生所謂的寄生電感，進一步使元件產生顯著尖峰電壓，嚴重者會造成元件損壞。因此，本文運用平板變壓器特性優點，降低變壓器的漏電感和寄生電容，改善了傳統變壓器的缺點，且提高的功率密度和得到輸出電壓的穩定。
本文採用TI數位信號處理器TMS320F28335為控制平台，驗證數位式諧振轉換器在實作或設計分析上是否正確。本文所研製的轉換器規格輸入直流電壓400V，輸出電壓12V，轉換器額定功率300W，開關切換頻率操作在450 kHz ~ 550 kHz。由擬與實驗結果證實，半載左右效率可達90.63%。由以上結果驗證設計與實驗的正確性。

GaN HEMTs are already devoloped in recent years, stability of GaN HEMTs has grow year by year, it has more suitable choosing for any specifications. The characteristic of GaN HEMTs is better than Si MOSFET in every way. Used GaN HEMTs component can let converter operate in higher frequency. The objective of this thesis is to design and implement a digital-controllor full bridge resonant converter. Because of parasitic inductance let MOSFET effect large voltage stress when MOSFET operate the high frequency. Therefore, the thesis used advantage of planar to reduce leakage inductance, stray capacitance and increase the power density.
The signal processor, TMS320F2335, is used as control platform. The design specifications include: input DC voltage of 400V, output voltage of 12V, total power rating of 300 W, switching frequency of 450 kHz ~ 550 kHz. Simulation and experimental result show is 90.63% about half load condition the efficiency. These results confirm the design and implementation.

摘　要 i
ABSTRACT ii
誌 謝 iv
目 錄 v
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1 研究背景與動機 1
1.2 研究目的 3
1.3 文獻探討與回顧 4
1.4 內容大綱 11
第二章 諧振轉換器原理與分析 12
2.1 LLC諧振轉換器的簡介 12
2.2 LLC諧振轉換器操作原理 14
2.3 LLC諧振轉換器特性分析 34
第三章 LLC諧振轉換器的電路和控制器設計 42
3.1 LLC諧振轉換器的設計 42
3.1.1 功率元件的選用 42
3.1.2 變壓器設計 43
3.1.3 諧振元件的設計 44
3.1.4 零電壓切換條件 45
3.1.5 輸出電容的選用 46
3.2 LLC諧振轉換器的控制器設計 46
3.3 損失分析 56
3.3.1 全橋諧振轉換器之損失分析 57
第四章 高頻平板變壓器設計和電路PCB佈線設計 59
4.1 平板變壓器簡介 59
4.2 平板變壓器之優勢 60
4.3 平板變壓器設計重點 62
第五章 模擬與實驗結果 84
5.1 LLC諧振轉換器之電路模擬 84
5.2 LLC諧振轉換器之電路實測 90
第六章 結論與未來展望 102
6.1 結論 102
6.2 未來展望 102
參考文獻 103
附錄 105

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