臺灣博碩士論文加值系統

本論文我們主要的研究方向是利用化學氣相沉積法來製備β-FeSi2奈米線並探討二矽化鐵奈米線的成長機制和性質。
為了能夠了解二矽化鐵奈米線生成之因素，我們將實驗過程分別以實驗溫度、氣體流量、持溫時間等因素來討論，我們可以發現在實驗溫度650℃上時開始慢慢有奈米線的生成，直到950℃時顆粒取代奈米線，並且隨著溫度的提高，奈米線長度越長半徑越小。在氣體流量方面，我們以氣體流量50sccm為最佳氣體流量，氣體流量越高時發現奈米線生成數量越少，並且當流量低於50sccm時會有不同相的出現。持溫時間方面發現當持溫時間越久奈米線的長度也越長。
在性質方面，β-FeSi2在PL紅外光光譜的測試下可以發現在1380nm峰值，可以用來當作發光二極體的應用上。β-FeSi2在磁性上因為不同維度有不同的性質產生，在塊材為無磁性，薄膜在100K以下時才有鐵磁性，β-FeSi2奈米線在本實驗中磁性分析中，發現有室溫鐵磁性的性質。在場發量測上，β-FeSi2有良好的場發特性，可以用來做場發射材料。

In this study, self-catalyzed β-FeSi2 nanowires were synthesized via chemical vapor deposition method where the fabrication of β-FeSi2 nanowires occurred on Si(100) substrates through the decomposition of the single-source precursor of anhydrous FeCl3 powders. We carefully varied temperatures, duration time and the flow rates of carrier gases to control and investigate the growth of the nanowires. we can find that β-FeSi2 nanowires grow at about 750 ℃~ 850 ℃ and they are longer and thinner with increasing temperature . The number of nanowires was found fewer at higher gas flow rate, and the flow is less than 50sccm may have different phases appear. It is found that the longer duration time makes longer nanowires.
β-FeSi2 in the PL IR spectra test can be found that there is a peak at 1380nm, it can be used as a light-emitting diode applications.The magnetism of β-FeSi2 nanowires is interesting as the result of various dimensions with different futures. β-FeSi2 bulk is non-magnetic,thin film ferromagnetic only below 100K, and in the magnetic analysis , there are room temperature ferromagnetic properties at the β-FeSi2 nanowires. In the field emission measurements, β-FeSi2 were good field emission materials.

摘要 I
Abstract II
誌謝 III
第一章 簡介 1
1-1 簡介:奈米科技 1
1-2 奈米材料的定義及種類 2
1-3 奈米材料的性質 5
1-3-1 奈米材料的基本性質 5
1-3-2 奈米材料的特殊性質 9
1-4 金屬矽化物 13
1-4-1 Fe/Si系統 14
1-4-2 β-FeSi2簡介 15
1-4-3 金屬矽化物奈米線 17
1-5 奈米線合成方法 19
1-5-1 VLS成長法 19
1-5-2 SLS成長法 21
1-5-3 VS成長法 22
1-5-4 Oxide-Assisted合成法 22
1-5-5 Template 合成法 23
1-5-6 CVD合成法 25
1-6 實驗動機 28
第二章 實驗方法 31
2-1 實驗流程 31
2-2 實驗步驟 31
2-2-1 試片清洗 31
2-2-2 前驅物和試片的放置 32
2-2-3 爐管加熱 32
2-2-4 石英管清洗 32
2-3 實驗儀器 34
2-3-1 X光繞射分析儀(X-Ray Diffractometer, XRD) 34
2-3-2 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) 34
2-3-3 穿透式電子顯微鏡(Transmission Electron Microscopy, TEM) 35
2-3-4 能量散佈分析儀(Energy Dispersive X-ray Spectroscopy,EDX/EDS) 37
2-3-5 超導量子干涉儀(Superconducting Quantum Interference Device,SQUID) 38
2-3-6 光致螢光光譜 (Photoluminescence, PL) 38
2-3-7 場發量測系統(Field Emission Measurement) 39
第三章 結果與討論 40
3-1 溫度的影響 40
3-2 流量的影響 48
3-3 持溫時間的影響 54
3-4 TEM繞射分析 57
3-5 載流氣體為氫氣以及低流量對奈米線的影響 60
3-6 PL儀器分析 64
3-7 磁性分析 66
3-8 場發射性質量測 71
第四章 結論 77
參考文獻 79

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