臺灣博碩士論文加值系統

本論文研究利用顯微拉曼光譜、掃描式電子顯微鏡、原子力顯微鏡、光致放光譜，探討不同氮化鋁緩衝層的成長條件對氮化物半導體薄膜成長在矽基板上之影響。
本研究分成兩個部分，第一部分是探討(111)晶面的矽基板上成長溫度由1000到700 ℃降溫方式成長的多層氮化鋁緩衝層上的氮化鎵薄膜性質。隨著氮化鋁緩衝層層數的增加，光致放光譜近帶邊放光能量籃移與強度增強，顯微拉曼光譜對應氮化鎵E2high與A1(LO)散射模態往高頻率偏移，掃描式電子顯微鏡表面裂紋密度降低，以及原子力顯微鏡影像顯示表面粗糙度降低，這些結果顯示此氮化鋁緩衝層成長方式有助於降低氮化鎵薄膜與矽基板間的拉伸應力。
第二部分研究延續第一部分，利用溫度由1100到700 ℃漸進降低方式成長多層氮化鋁緩衝層來提升氮化鎵薄膜品質，藉以成長氮化銦鎵/氮化鎵量子井來提升發光強度，實驗結果顯示隨氮化鋁緩衝層層數的增加，量子井光激發螢光譜近帶邊放光能量有藍位移與放光強度增強，說明量子井中的量子侷限史塔克效應減小，即量子井中壓應力降低有關。而在顯維拉曼光散射譜中，對應氮化鎵E2high與A1(LO)往高頻率偏移亦顯示此氮化鋁緩衝層成長方式有效降低氮化鎵薄膜與矽基板間的拉伸應力。

We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers.
The studies are divided into two parts. The first part is the growth of multiple AlN buffer layers with the decrease of growth temperature from 1000 to 700 oC. For the increase of the numbers of AlN buffer layer, it shows the blue shift of near band edge light emission energy and intensity, high energy shift of E2high and A1(LO) scattering modes of GaN from micro-Raman spectra, pronounced decrease of cracks density in scanning electron microscope images, and the reduced surface roughness in atomic force microscope images. These results indicate that such growth conditions of AlN buffer layers can help in decreasing tensile stress in GaN on (111) Si substrates.
The second part of the researches follow the first part. We also prepared the samples with AlN buffer layers on (111) Si substrates to improve the quality of GaN thin film. Furthermore, the InGaN/GaN multiple quantum wells were deposited on high quality GaN thin films. The near-band edge emission energies and intensities of samples show blue shift and increase respectively with the increase of the numbers of AlN buffer layer. This is due to the reduction of piezoelectric fields as well as the quantum confined Stark effect in InGaN/GaN multiple quantum wells. Also, the shift of E2high and A1(LO) modes of GaN from micro-Raman spectra were observed. The tensile stress in GaN on (111) Si substrates was decreased effectively .

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 導論 1
1-1 前言 1
1-2 研究動機 2
1-3 文獻回顧 4
第二章 實驗儀器及原理 15
2-1 光激發螢光光譜與變溫光激發螢光光譜 15
2-2 拉曼光譜 17
2-3 掃描式電子顯微鏡(Scanning Electron Microscope) 19
2-4 原子力顯微鏡(Atomic Force Microscope) 20
第三章 氮化鋁緩衝層於矽基板上成長氮化鎵之研究 21
3-1 前言 21
3-2 樣品結構 22
3-3 光激發光譜分析 24
3-4 顯微拉曼散射分析 25
3-5 掃描式電子顯微鏡分析 27
3-6 原子力顯微鏡分析分析 28
3-7 結果與討論 29
第四章 氮化鋁緩衝層於矽基板上成長氮化銦鎵/氮化鎵量子井之研究 38
4-1 前言 38
4-2 樣品結構 39
4-3 顯微拉曼分析 39
4-4 光激發光譜分析 41
4-5 結果與討論 43
第五章 總結 53
參考文獻 55

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