|
Abstract (in Chinese) ---------------------------------------------------------------- I
Abstract (in English) -------------------------------------------------------------- III
Acknowledgements ---------------------------------------------------------------- VI
Contents ---------------------------------------------------------------------------X
Table Captions --------------------------------------------------------------------XIII
Figures Captions ------------------------------------------------------------------XIV
CHAPTER 1 Introduction --------------------------------------------------------- 1
1-1 Background of III-Nitrides and Zinc Oxide Semiconductor -------------------- 1
1-1-1 Background of III-Nitrides Semiconductor ------------1
1-1-2 Background of Zinc Oxide III-Nitrides Semiconductor -------------------------- 2
1-2 III-Nitrides Optical Devices and Motivation ----------------------------------------- 4
1-2-1 Light Emitting Diodes (LEDs) ------------------------------------------------------- 4
1-2-2 Ultraviolet Photodetectors (PDs) ---------------------------------------------------- 6
1-3 Organization of Dissertation -------------------------------------------------------------- 6
Ch1 References ----------------------------------------------------------------------------------- 8
CHAPTER 2 Experimental Equipment and Relevant Theory ---- 18
2-1 MOCVD Growth Mechanisms of Nitride-Based Semiconductors ---------- 18
2-2 In Situ Monitoring of Epitaxial Layer Growth ----------------------------------------- 22
2-2-1 Introduction of LayTec EpiCurve -------------------------------------------------- 22
2-2-2 Growth Rate and Layer Thickness ------------------------------------------------- 23
2-2-3 Composition and Ternary Materials ----------------------------------------------- 25
2-2-4 Surface Quality ----------------------------------------------------------------------- 25
2-2-5 Advantage Topic ---------------------------------------------------------------------- 26
2-2-6 True Temperature Measurement ---------------------------------------------------- 26
2-3 Theory and Principle of MSM Photodetectors -------------------------------------- 30
2-3-1 Theory of Photodetectors ------------------------------------------------------------ 30
2-3-2 Principle of MSM Photodetectors ------------------ 32
2-4 Background of Radio Frequency Magnetron Sputtering System ---------- 32
2-5 Experimental Details and Analyses ------------------------------------------------------ 34
2-5-1 Hall Measurement System ---------------------------------------------------------- 34
2-5-2 Photoluminescence (PL) Spectrum System --------------------------------------- 34
2-5-3 Scanning Electron Microscope (SEM) -------------------------------------------- 36
2-5-4 X-ray Photoelectron Spectroscopy (XPS) ----------------------------------------- 36
2-5-5 Auger Electron Spectroscopy (AES) ----------------------------------------------- 37
2-5-6 Current-Voltage (I-V) Measurement System ------------------------------------- 38
Ch2 References --------------------------------------------------------------------------------- 39
CHAPTER 3 Sputtered Indium-Tin-Oxide on p-GaN --------------------- 53
3-1 Experimental Procedures and Device Fabrication ------ 54
3-2 Results and Discussion -------------------------------------------------------------------- 55
3-3 Summary ------------------------------------------------------------------------------------ 58
Ch3 References --------------------------------------------------------------------------------- 59
CHAPTER 4 (NH4)2Sx-Treated AlGaN MIS Photodetectors ------------ 70
4-1 Nitride-Based Metal-Insulator-Semiconductor Capacitors with Liquid-Phase Deposition Oxide and (NH4)2Sx Pretreatment Prepared on Sapphire Substrates ---------- 70
4-1-1 Experimental Procedures and Fabrication of AlGaN MIS Capacitors ----- 72
4-1-2 Surface Physical Properties of AlGaN ------------- 72
4-1-3 Material Properties of LPD-SiO2 -------------- 73
4-1-4 Electrical Properties of AlGaN MIS Capacitors ----- 73
4-1-5 Summary -------------------------------------- 75
4-2 (NH4)2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer-------- 75
4-2-1 Fabrication of AlGaN MIS Photodetectors --------- 76
4-2-2 Optical and Physical Properties of AlGaN Surface -- 77
4-2-3 Electrical Properties of AlGaN Surface ---------- 78
4-2-4 Summary --------------------------------------- 80
Ch4 References --------------------------------------------------------------------------------- 81
CHAPTER 5 ZnO Nanowires and ZnO/p-GaN Heterojunction Diodes -----96
5-1 Investigations of ZnO Nanowires and ZnO/p-GaN Heterojunction Diodes Grown by Different Aqueous Solutions Zinc Nitrate and Zinc Acetate ---------- 96
5-1-1 Growth of ZnO Nanowires, Nanorods and Devices Fabrication --- 96
5-1-2 Optical and Physical Properties of ZnO Nanowires and Nanorods ------ 97
5-1-3 Electrical Properties of ZnO/p-GaN Heterojunction --99
5-1-4 Summary ------------------------------------ 99
5-2 Using SiO2 Blocking-Layer to Improve the Electrical Characteristics of ZnO Nanowires/p-GaN Heterojunction Diode--------------- 100
5-2-1 Fabrication of ZnO/p-GaN Heterojunction with and without LPD-SiO2 ---- 100
5-2-2 Electrical and Optical Properties of ZnO/p-GaN Heterojunction with and without LPD-SiO2 --------------101
5-2-3 Summary ------------------------------- 103
Ch5 References --------------------------------------------------------------------------------- 105
CHAPTER 6 Conclusions and Future Work ---------- 115
6-1 Conclusions ------------------------------ 115
6-2 Future Work ----------------------------------- 116
Ch6 References -------------------------------------------------------------------------------- 118
|