臺灣博碩士論文加值系統

(100)取向氮化鋁(AlN)薄膜具有優異之體聲波與表面聲波特性。本實驗使用64°-鈮酸鋰(64°-YX LiNbO3)基板作為研製表面聲波元件之壓電基板，在此基板上以反應性射頻磁控濺射法來成長(100)軸向之氮化鋁薄膜，製作成雙壓電層的複合基板。在複合表面聲波元件的製作上，本研究以濺鍍法配合黃光微影製程分別在鈮酸鋰基板(LiNbO3)與複合基板(AlN/LiNbO3)的表面鍍上金屬指叉狀鋁電極。將製作完成的複合式表面聲波元件接至網路分析儀量測，測量出元件的頻率響應及機電耦合係數，使用頻譜分析儀量測複合表面聲波元件之頻率溫度係數。
本研究利用鈮酸鋰基板與複合基板製作表面聲波元件，探討氮化鋁薄膜厚度對於複合式表面聲波基板特性的影響。由實驗結果得知，使用鈮酸鋰基板時，其中心頻率為 45.66 MHz，頻率溫度係數為 -62.49 ppm/℃，而機電耦合係數為 11.07%；使用複合基板時，當氮化鋁沉積一小時，薄膜厚度為 0.5 μm，其中心頻率為 46.13 MHz，頻率溫度係數為 -58.62 ppm/℃，而機電耦合係數為 9.79%；當沉積時間為兩小時，氮化鋁薄膜厚度為 1 μm，其中心頻率為 46.22 MHz，頻率溫度係數為 -53.41 ppm/℃，而機電耦合係數為 7.21%；當沉積三小時薄膜厚度為 1.5 μm，其中心頻率為 46.39 MHz，頻率溫度係數為 -50.11 ppm/℃，而機電耦合係數為 6.54%。
根據上述結果顯示，我們成左漸H反應性射頻磁控濺鍍法於鈮酸鋰基板上成長氮化鋁薄膜，該複合基板材料有助於提高表面聲波的波速，此外也改善了頻率溫度係數。

The (100) oriented Aluminum nitrogen (AlN) thin films have excellent bulk acoustic wave (BAW) and surface acoustic wave (SAW) properties. In this study, the piezoelectric 64°-YX LiNbO3 substrate was used to fabricate the SAW devices. We also deposited (100) oriented AlN thin film on this lithium niobate (LiNbO3) substrate to form a new composite substrate (AlN/LiNbO3) using reactive radio frequency magnetron sputtering method. The SAW devices were fabricated on the composite substrate and the effects of AlN film thickness on the composite substrate properties have been investigated. The SAW interdigital transducer electrodes were deposited on the top of those substrates by the sputtering and photolithography methods in the process. The network analyzer was used to measure the center frequency and electromechanical coupling coefficient (K2) of the SAW devices. The spectrum analyzer was used to estimate the temperature coefficient of frequency (TCF).
The SAW filter fabricated by the LiNbO3 substrate showed the center frequency, TCF and K2 are 45.66 MHz, -62.49 ppm/℃ and 11.07%, respectively. On the other hand, the SAW filter fabricated by the composite substrate with AlN film thickness is 0.5 μm. It is found that center frequency, TCF and K2 are 46.13 MHz, -58.62 ppm/℃ and 9.79%, respectively. When the composite substrate with 1 μm-thickness AlN film, the SAW filter showed the center frequency, TCF and K2 are 46.22MHz, -53.41 ppm/℃ and 7.21%, respectively. The experimented results showed the center frequency, TCF and K2 are 46.39 MHz, -50.11 ppm/℃ and 6.54%, respectively.
In this study, AlN thin films were successfully prepared on the LiNbO3 substrate by reactive RF magnetron sputtering method. The results exhibited the composite substrate can increase the SAW velocity, and improve the temperature coefficient of frequency.

摘 要 I
ABSTRACT III
壹、 誌謝 V
貳、 目錄 VI
參、 表目錄 VIII
肆、 圖目錄 IX
第 一 章 緒論 1
第 二 章 理論 6
2.1 壓電理論 6
2.1.1 壓電材料 7
2.1.2 聲波運動方程式 8
2.1.3 壓電方程式 10
2.2 鈮酸鋰結構與特性 13
2.3 氮化鋁之結構與特性 13
2.4 濺鍍原理 14
2.4.1 電漿 14
2.4.2 射頻磁控濺鍍 15
2.4.3 反應性濺鍍 16
2.5 表面聲波元件原理 17
2.5.1 表面聲波濾波器元件的特點 17
2.5.2 表面聲波元件的參數性質 18
第 三 章 實驗 34
3.1 基板清洗 34
3.2 氮化鋁薄膜的成長 35
3.2.1 濺鍍系統簡介 35
3.2.2 薄膜沈積 36
3.3 薄膜量測分析 37
3.3.1 X 光繞射儀 37
3.3.2 原子力顯微鏡原理 38
3.4 表面聲波元件的製作 38
3.5 表面聲波元件的分析 41
第 四 章 結果與討論 50
4.1 薄膜分析 50
4.1.1 薄膜結晶之分析 50
4.1.2 薄膜厚度之分析 50
4.1.3 薄膜表面粗糙度分析 51
4.2 表面聲波元件分析 51
4.2.1 表面聲波元件Vp與K2量測 52
4.2.2 表面聲波元件TCF量測 53
第 五 章 結論 68
參考文獻 69

[1] P. Curie and J. Curie, Bull. Soc. Min. de France, Vol. 3, pp. 90, 1880.
[2] 吳朗, “電子陶瓷-壓電”，全欣圖書公司，83 年12 月.
[3] A. Langevin, “Ultilisation de l’effect Piezoelectrictique, Presses Unicersitaires de France”, Paris, 1942.
[4] W. G. Cady, Phys. Rev., 17, pp. 531, 1921.
[5] R. M. White and F. W. Voltmer, “Direct Piezoelectric Coupling to Surface Elastic”, Appl. Phys. Lett., Vol. 17, pp. 314-316, 1965.
[6] H. Okano, Y. Takahashi, T. Tanaka, K. Shibata and S. Nakano, “Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering”, Jpn. J. Appl. Phys., Vol. 31, pp. 3446-3451, 1992.
[7] S. Okamura, H. Nishi, T. Inada and H. Hashimoto, “AlN Capped Annealed of Si Implanted Semi-Insulating GaAs”, Appl. Phys. Lett., Vol. 40, pp. 689-690, 1982.
[8] K. Tsubouchi and N. Mikoshiba, “Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films”, IEEE Trans. on Sonics & Ultrason., SU-32, Vol. 5, pp. 634-643, 1985.
[9] M. Mortia, S. Isogai, K. Tsubouchi and N. Mikoshiba, “Characteristics of the Metal Insulator Semiconductor Structure: AlN/Si”, Appl. Phys. Lett., Vol. 38, pp. 50-54, 1981.
[10] K. S. Stevens, M. Kinniburgh, A. F. Schwartzman, A. Ohtani and R. Beresford, “Demonstration of a Silicon Field-Effect Transistor Using AlN as the Gate Dielectric”, Appl. Phys. Lett., Vol. 66, pp. 3179-3181, 1995.
[11] G. Este, R. Surridge and W. D. Westwood, “Stress Control in Reactively Sputtered AlN and TiN Films”, J. Vac. Sci. Technol., Vol. A4, pp. 1892-1897, 1986.
[12] R. Bensalem, A. Abid and B. J. Sealy, “Evaporated Aluminum Nitride Encapsulating Films”, Thin Solid Films, Vol. 143, pp.141-153, 1986.
[13] J. S. Wang, K. M. Lakin, “Low-Temperature Coefficient Bulk Acoustic Wave Composite Resonators”, Appl. Phys. Lett., Vol. 40, pp. 308-310, 1982.
[14] T. Shiosaki, T. Yamamoto, T. Oda and A. Kawabata, “Low-Temperature Growth of Piezoelectric AlN Film by rf Reactive Planar Magnetron Sputtering”, Appl. Phys. Lett., Vol. 36, pp. 643-645, 1980.
[15] 王宏文, “淺談表面聲波感測器(下)”, 工業材料, Vol. 91, pp. 47-48, 1994.
[16] D. C. Bertolet, H. Liu and J. W. Rogers, “Initial Stages of AlN Thin-Film Growth on Alumina Using Trimethylamine Alane and Ammonia Precursors”, J. Appl. Phys., Vol. 75, pp.5385-5390, 1994.
[17] C. J. Sun, P. Kung, A. Saxler, H. Ohsato, K. Haritos and M, Razeghi, “A Crystallographic Model of (001) Aluminum Nitride Epitaxial Thin Film Growth on (001) Sapphire Substrate”, J. Appl. Phys., Vol. 75, pp. 3964-3967, 1994.
[18] A. H. Khan, M. F. Odeh, J. M. Meese, E. M. Charlson, E. J. Charlson, T. Stacy, G. Popovici and M. A. Prelas, “Growth of Oriented Aluminum Nitride Films on Silicon by Chemical Vapour Deposition”, J. Mater. Sci., Vol. 29, pp. 4314-4318, 1994.
[19] S. Tanaka, R. Scott Kern, J. Bentley and R. F. Davis, “Defect Formation During Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on Silicon Carbide by Gas-Source Molecular Beam Epitaxy”, Jpn. J. Appl. Phys. Vol. 35, pp. 1641-1647, 1996.
[20] M. T. Wauk and D. K. Winslow, “Vacuum Deposition of AlN Acoustic Transducers”, Appl. Phys. Lett., Vol. 13, pp. 286-288, 1968.
[21] F. C. Stedile, I. J .R. Baumvol, W. H. Schreiner and F. L. Freire, “Study on Direct Current Reactive Sputtering Deposition of Aluminum Nitride Thin Film”, J. Vac. Sci. Technol., Vol. A10, pp. 3272-3277, 1992.
[22] M. Penza, M. F. De Riccardis, L. Mirenghi, M. A. Tagliente and E. Verona, “Low Temperature Growth of r.f. Reactively Planar Magnetron-Sputtered AlN Films”, Thin Solid Films, Vol. 259, pp. 154-162, 1993.
[23] R. D. Vispute, H. Wu and J. Narayan, “High Quality Epitaxial Aluminum Nitride Layers on Sapphire by Pulsed Laser Deposition”, Appl. Phys. Lett., Vol. 67, pp. 1549-1551, 1995.
[24] H. Okano, T. Tanaka, K. Shibata and S. Nakano, “Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering”, Jpn. J. Appl. Phys., Vol. 31, pp. 3017-3020, 1992.
[25] J. Yang, C. Wang, X. Yan, K. Tao, B. Liu, and Y. Fan, "Polycrystalline AlN films of Fine Crystallinity Prepared by Ion-Beam Assisted Deposition," Appl. Phys. Lett., Vol. 62, pp. 2790-2791, 1993.
[26] Sean Wu, Ruyen Ro, Zhi-Xun Lin, and Maw-Shung Lee, “High velocity shear horizontal surface acoustic wave modes of interdigital transducer/(100)AlN/ (111)diamond”, Appl. Phys. Lett. Vol. 94, pp. 092903, 2009.
[27] Sean Wu, Ruyen Ro, Zhi-Xun Lin, and Maw-Shung Lee, “Rayleigh surface acoustic wave modes of interdigital transducer/ (100) AlN/ (111) diamond”, J. Appl. Phys. Vol. 104, pp. 064919, 2008.
[28] Murata Mfg. Co., Ltd, Japan, United States patent, patent number 5061870, Oct. 29, 1911.
[29] 武以立, 邓盛刚,王永德, “声表面波原理及其在电子技术中的应用”,北京：国防工业出版社，1983. 3.
[30] 高至鈞, 汪建民, “壓電陶瓷縱談”, 材料與社會第26期, pp.4-11, 1989.
[31] Joel F. Rosenbaum, “Bulk Acoustic Wave Theory and Devices”, ARTECH HOUSE, 1988.
[32] Chang, Feng-Zhi, “Analysis of Vibration Modes of AT-cut Quartz Resonators”, Department of Electrical Engineering National, Cheng Kung University, Dissertation for Master.
[33] B. Matthias and J. P. Remeika, Phys. Rev., Vol. 76, pp. 1886, 1949.
[34] 余素楨， 晶體之結構與性質， 國立編譯館， 1993.
[35] R. S. Weis and T. K. Gaylord, Appl. Phys. A, Vol. 37, pp. 191, 1985.
[36] R. Rodriguez-Clemente, B. Aspar, N. Azema, B. Arms, C. Combescure, J. Durand and A. Figueras, “Morphological Properties of Chemical Vapour Deposited AlN Films,” Journal of Crystal Growth, Vol. 133, pp. 59-70, 1993.
[37] E. Rille, R. Zarwasch and H. K. Puller, “Properties of Reactively D.C.-Magnetron-Sputtered A1N Thin Films,” Thin Solid Films, Vol. 228, pp. 215-217, 1993.
[38] 羅吉宗，“薄膜科技與應用”，全華科技圖書股份有限公司，2005.
[39] 金原粲[監修]，白木 靖寬、吉田 貞史[編著]，王建義[編譯]，“薄膜工程學”，全華科技圖書股份有限公司，2006.
[40] 阿部東彥，家田正之，高正雄譯，“電漿化學”，復漢出版社，Chap. 2, pp. 16, 1984.
[41] F. Shinoki and A. Itoh, “Mechanism of RF Reactive Sputtering,” Journal of Applied Physics, Vol. 46, pp. 3381-3384, 1975.
[42] H. Okano, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano, “Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering,” Japanese Journal of Applied Physics, Vol. 31, pp. 3446-3451, 1992.
[43] E. J. Bienk, H. Jensen, and G. Sorensen, “The Influence of the Reactive Gas Flow on the Properties of AlN Sputter-Deposited Films,” Materials Science and Engineering, A. Vol. 140, pp. 696-701, 1991.
[44] J. L. Vossen, and W. Kem, Thin Film Process Part II-1, Academic Press, San Diego, California, 1978.
[45] O. Almen and G. Bruce, “Sputtering Experiments in the High Energy Region,” Nucl. Instrum and Methods, Vol.11, pp. 279-289, 1961.
[46] Kuo-Sheng Kao , “Frequency and temperature characteristics of surface acoustic wave devices”, Department of Electrical Engineering, National Sun Yat-Sen University, Dissertation for doctoral.
[47] Velimir M. Ristic, Principles of Acoustic Devices, Wiley, New York, pp. 103, 1983.
[48] H. Matthews, “Surface Wave Filters Design, Construction, and Use”, John Wiley & Sons, pp. 20, 1979.
[49] A. J. Slobodnik, JR, T. L. Szabo, and K. R. Laker, “Miniature Surface Acoustic Wave Filters”, Proc. IEEE, Vol. 67, pp. 129-132, 1979.
[50] C. Campbell, “Surface Acoustic Wave Devices and Their Signal Processing Applications”, Academic Press, INC, pp. 35-36, 1989.
[51] Te-Chun Wu, “Study and fabrication of thin film SAW devices”, Department of Electrical Engineering, Chung Yuan Christian University, Dissertation for Master.
[52] Center of Nanoscience and Nanotechnology, National Chung Hsing University, “The principle of atomic force microscopy and Technology”, Web site.
[53] G.W. Farnell “SAW Propagation in Piezoelectric Solids”, Computer Aided Design of Surface Acoustic Wave Devices.
[54] P.H. Carr, Ultrasonics Symp. Proc., IEEE Cat 74 CHO 896-1SU, pp. 286, 1974.