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研究生:李健民
研究生(外文):Chien-Ming Lee
論文名稱:商業N型結晶矽太陽電池之研究
論文名稱(外文):The Study of Commercial N-type Crystalline Silicon Solar Cell
指導教授:張守進張守進引用關係許進恭蔡進耀
指導教授(外文):Shoou-Jinn ChangJinn-Kong SheuChin-Yao Tsai
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:英文
論文頁數:91
中文關鍵詞:商業太陽電池
外文關鍵詞:commercialsoler cell
相關次數:
  • 被引用被引用:1
  • 點閱點閱:256
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
摘要

本研究使用商用in-line PECVD 低溫(<300℃)沉積SiN:H 抗反射層,並且以網版印刷的方式製作商業N型太陽電池以達到高效率、低成本、高產量。
主要討論在不同製程之下所得到的結果.我們分析不同的蝕刻時間對SiNx的影響,利用AFM分析其表面粗糙度;FTIR分析元素鍵結以及穿透反射儀來分析光學特性。
最後我們用太陽能模擬器來得到我們的效率,並且分析在不同的製程參數之下所得到的結果
Abstract

In this thesis, we use commercial in-line PECVD to deposit SiNx:H antireflection coating layer in low temperature (<300℃) and finish the commercial n-type solar cells by screen printing to achieve high efficiency、low cost and high throughput.
The main discussion is the results of different process. Analyzing SiNx layer after different etching time. We use AFM to measure the roughness of surface, FTIR spectrum to analyze the bonding of elements and spectrometer to analyze optical characteristics.
  Finally we use solar simulator to obtain efficiency and analyze results of different process.
Contents

I 合格証明(中文)
II 合格証明(English)
III 中文摘要
IV English Abstraction
V Acknowledge
VI Contents
X Figure Captions
XIV Table Captions

Chapter 1 Introduction
1 1-1 Development of Solar Energy
3 1-2 N-type silicon substrate solar cells
5 1-3 Thesis Outline

Chapter 2 Theorem and Background
6 2-1 Solar Cell
6 2-1-1 Important definitions
7 2-2 Characteristics of the a Photovoltaic Cell
7 2-2-1 Photocurrent and quantum efficiency
8 2-2-2 Dark current and open circuit voltage
9 2-2-3 Efficiency and Equivalent-circuit Model
11 2-3 Surface Effects
13 2-4 Diffusion furnaces
14 2-5 Deposition and Passivation of SiNx

Chapter 3 Experiments and Measurements
16 3-1 Sample Preparation
18 3-2 Scanning Electron Microscopes (SEM)
19 3-3 Fourier Transform Infrared Spectroscopy
20 3-4 Atomic Force Microscopes (AFM)
21 3-5 Hall Measurements
22 3-6 Optical Measurements
22 3-6-1 Spectrometer
22 3-6-2 Ellipsometer
24 3-7 Fabrication and Testing of Solar Cell
24 3-7-1 Cleaning and Texturing
24 3-7-2 Front Surface Field (FSF)
26 3-7-3 Antireflection Coating Layer
26 3-7-4 Screen Printing
28 3-7-5 Performance Testing

Chapter 4 Results and Discussion
29 4-1 Metallization Observation
29 4-1-1 Screen-printed Metallization
30 4-1-2 P-N junction formation
31 4-2 Surface Process
32 4-3 Etching Aluminum
33 4-4 Firing conditions
33 4-4-1 Belt Furnace Speed
33 4-4-2 Firing Temperature
34 4-4-3 Surface Analyses
36 4-5 Composition Analyses
37 4-6 Optical Characteristics
37 4-6-1 Refractive Index
37 4-6-2 Reflectance
39 4-7 Solar Cell Performance
39 4-7-1 Open Circuit Voltage
39 4-7-2 Short Circuit Current
40 4-7-3 Series Resistance
41 4-7-4 Shunt Resistance
41 4-7-5 Fill Factor
41 4-7-6 Efficiency
42 4-7-7 Breakage

43 Chapter 5 Conclusion

46 Figure
83 Table
89 Reference
Reference

[1] BCC 2004/05
[2] 財團法人國家實驗研究院科技政策研究與資訊中心: 市場報導,2005
[3] L.J. Geerligs et al., Base doping and recombination activity of impurities in crystalline silicon solar cells,Progress in Photovoltaics, to be published
[4] P. Woditsch et al., Solar grade silicon feedstock supply for PV industry, Solar Energy Materials and Solar Cells, 72, 2002, 11-26
[5] A. Ebong et al., Belt furnace gettering and passivation of n-web silicon for high efficiency screenprinted front surface field solar cells, NREL workshop,2000, 234-237
[6] A. Cuevas et al., Back junction solar cells on n-type mc and Cz silicon wafers, 3rd WCPEC, Osaka, Japan,May 11-18, 2003 , 963-966
[7] K. R. McIntosh et al., The choice of silicon wafer for the production of low-cost rear-contact solar cells, 3rd WCPEC, Osaka, Japan, May 11-18, 2003, 971-974
[8] Hans Joachim Moller, Semiconductors for Solar Cells, Artech House, 1993
[9] Donald A. Neamen, Semiconductor Physics and Devices, McGraw-Hill, 2003
[10] Sze, S. M. Semiconductor Devices: Physics and Technology. New York: Wiley, 1985
[11] S. Sivoththaman, W. Laureys, P. De Schepper, J. Nijs, R. Mertens, Selective Emitters in Si by Single Step Rapid Thermal Diffusion for Photovoltaic Devices, IEEE ELECTRON DEVICE LETTERS, 21, 6, 2000
[12] 許建興, 以高密度電漿化學氣相沉積系統成長與蝕刻氮化矽薄膜, 逢甲大學化學工程學系碩士論文, 2003
[13] D. Mathiot, Modeling of hydrogen diffusion in n- and p-type silicon, Phys. Rev. B, 40, 1989
[14] S. Sivaram, Chemical Vapor Deposition, Van Nostrand Reinhold, 1995
[15] 陳松延, 以 In-Line PECVD 快速沉積 SiNx:H 抗反射層於商業型結晶矽太陽電池之研究, 成功大學光電科學與工程研究所碩士論文, 2004
[16] S. Winderbaum, F. Yun, O. Reinhold, Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cells, J. Vac. Sci. Technol. A, 15, 3, 1997
[17] R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light, North-Holland, 1989
[18] L. Cai, A. Rohatgi, D. Yang, M. A. El-Sayed, Effect of rapid thermal anneal on refractive index and hydrogen content of plasma-enhanced chemical vapor deposited silicon nitride films, J. Appl. Phys. 80, 9, 1996 [19] Antonio Luque, Solar Cells and Optics for Photovoltaic Concentration, Adam Hilger, Bristol and Philadelphia, 1989
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A. Ebong, P. Doshi, Aluminum alloy back p-n junction dendritic web
silicon solar cell
[21] M.C. Wei , S.J. Chang , C.Y. Tsia , C.H. Liu , S.C. Chen, SiNx deposited by in-line PECVD for multi-crystalline
silicon solar cells
[22] GARY C. CHEEK, ROBERT P. MERTENS, ROGER VAN OVERSTRAETEN, LOUIS FRISSON, Thick-Film Metallization for Solar Cell Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, 31, 5, 1984
[23] C. Ballif, D. M. Huljic, G. Willeke, A. Hessler-Wyser, Silver thick-film contacts on highly doped n-type silicon emitters: Structural and electronic properties of the interface, Appl. Phys. Lett., 82, 12, 2003
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