臺灣博碩士論文加值系統

在本論文中，使用表面黏著技術和封裝的phemt來發展混成Ka頻段的震盪器已測試成功。用軟體模擬的結果和實際上量測到的震盪器頻率十分吻合。而且，大量、低價的生產Ka頻段的積體電路是可行的。
量測震盪器所到的頻率為27.33GHz，它的輸出功率為-9.83dBm。震盪器的偏壓條件為 VDS=2伏特， VGS=-0.2伏特， IDS=32毫安培。

In this thesis, a hybrid MIC Ka band oscillator has been developed and tested successfully employing the advanced SMT (surface mount technique) packaged PHEMT (pseudomorphic high electron mobility transistor). The simulated results based on SeriesIV and measured oscillator frequency agrees excellently. Also, it is feasible to product large volume, low cost Ka band integrated circuits.
The measured oscillation frequency is 27.33 GHz, and the output power is —9.83dBm. The oscillator is biased at VDS=2 volt, VGS=-0.2 volt and the current IDS=32 mA.

ABSTRACT (Chinese)-------------------------------------------------------------------------i
ABSTRACT (English)-------------------------------------------------------------------------ii
ACKNOWLEDGEMENTS------------------------------------------------------------------iii
TABLE OF CONTENTS---------------------------------------------------------------------iv
LIST OF FIGURES--------------------------------------------------------------------------- v
CHAPTER 1 Introduction--------------------------------------------------------------------1
CHAPTER 2 Oscillator Theory-------------------------------------------------------------3
2.1 Oscillator Configurations-----------------------------------------------------3
2.2 Stability of the Two Port Network-----------------------------------------19
2.3 Other Oscillator Phenomena------------------------------------------------22
CHAPTER 3 Oscillator Design-----------------------------------------------------------23
3.1 New Package Active Device------------------------------------------------23
3.2 Design Approach and CAD Simulation----------------------------------27
3.3 Fabrication and Measurement-----------------------------------------------35
CHAPTER 4 Conclusion-------------------------------------------------------------------40
REFERENCE---------------------------------------------------------------------------------41

[1] Y. Kwon, G. I. Ng, D. Pavlidis, R. Lai and T. Brock, J. Castagne and N. T. Linh,
“High Efficiency Monolithic Ka-Band Oscillators using InAlAs/InGaA HEMT’s,”
GaAs IC Symposium p263,1991.
[2] Mohammad Madihian and Hideki Takahashi, “A Low-Noise K-Ka Band Oscillator Using AlGaAs/GaAs Heterojunction Bipolar Transistors,” IEEE MTT-T, Vol. 39, No. 1, pp. 95-101, Jan. 1991.
[3] Takuo Kashiwa, Member IEEE, Takao Ishida, Takayuki Katoh, Hitoshi Kurusu, Hiroyuki Hoshi, and Yasuo Mitsui, Member IEEE, “V-Band High-Power Low Phase-Noise Monolithic Oscillators and Investigation of Low Phase-Noise Performance at High Drain Bias,” IEEE MTT-T, Vol. 46, No. 10, pp.1559-1565, October 1998.
[4] William P. Shillue, Sai-Chu Wong, Karl D. Stephan, “MONOLITHIC IMPATT MILLIMETER-WAVE OSCILLATOR STABILIZED BY OPEN-CAVITY RESONATOR,” IEEE MTT-S, PP.739-740, 1989.
[5] J. Anastassiades, D. Kaminsky, E. Perea and A. Poezevara, Solid-state Microwave Generation, Chapman &Hall, 1992.
[6] J.R.Soares, “GaAs MESFET Circuit Design”, Artech House, 1988.
[7] Obregon, J., and A. P. S. Khanna, “Exact Derivation of the Nonlinear Negative-Resistance Oscillator Pulling Figure,” IEEE Trans. Microwave Theory Tech., Vol. MTT-30, No. 7, July 1982, pp. 1109-1111.
[8] Johnson, Kenneth M., Large signal GaAs MESFET oscillator design. IEEE Tran. Microwave Theory and Techniques, Vol. MTT-24, No. 11, November 1976, pp. 752-758.
[9] Bodway G., “Circuit design and characterization of transistors by means of three port scattering parameters,” Microwave Journal, Vol. 10 , pp.61-69, May 1967.
[10] R. Soares, J. Graffeuil, and J. Obregon, Applications of GaAs MESFETS.
Dedham, MA: Artech House, 1983.
[11] M. L. Edwards and J. H. Sinksy, “A New Criteria for Linear 2-Port Stability
Using a Single Geometrically Derived Parameter,” IEEE Trans. Microwave
Theory and Techniques, vol. MTT-40, pp2803-2811, December 1992.