臺灣博碩士論文加值系統

本論文主要闡述ZnO TFT和ZnZrO TFT使用Gd2O3利用蒸鍍的方式做為閘極絕緣層，利用射頻共濺鍍的沉積方式，將鋯有效的摻雜氧化鋅做為薄膜電晶體以有效的解決電特性。
先以XPS的量測方式可以知道Gd2O3/ZnO和Gd2O3/ZnZrO異質結構能量不連續的能帶偏移，藉以得到△EV和△EC。然而Gd2O3 /ZnZrO的△EC為3.98eV，在電特性上會比Gd2O3/ZnO (△EC=3.62)要來的要穩定。而ZnZrO TFT的threshold voltage、sub-threshold slope和mobility分別為-0.96V、0.214V/decade、2.46×106和1.06cm2/V-s。
此外還觀察了ZnZrO TFT和ZnO TFT的低頻雜訊的行為，經過鋯摻雜氧化鋅，是可以大幅減少載子在通道中trapping/detrapping的波動，ZnZrO TFT和ZnO TFT的霍格常數分別為 H~1.18×10-1和 H~5.5×105。

This work elucidates the properties of ZrZnO and ZnO TFTs devices using reactively evaporated Gd2O3 as a gate dielectric. Effects of zirconium (Zr) doping on the performance of resolve processed zinc oxide (ZnO) thin-film transistors (TFTs) grown using the RF cosputtering method are investigated. We measured the energy discontinuity in the band offsets (ΔEc and ΔEv) of Gd2O3/ZrZnO and Gd2O3/ZnO heterostructures using x-ray photoelectron spectroscopy (XPS).
The Gd2O3/ZrZnO TFTs showed the better conduction band (ΔEc = 3.98) and electrical stability performances than those of the Gd2O3/ZnO (ΔEc = 3.62) TFTs. For the ZrZnO device with a threshold voltage (VTH) is -096V, the sub-threshold slope (S.S) is 0.214 V/decade, the Ion/Ioff ratio is 2.46x106 and mobility is 1.06cm2/V-s.
In addition, we also observe that the low-frequency noise (LFN) behaviors of ZrZnO and ZnO thin-film transistors. The fluctuation that is caused by trapping/detrapping can be reduced by effects of Zr doping on the performance of TFTs devices. The Hooge’s parameters are extracted to be αH ∼1.18×10-1 for the ZrZnO TFTs and αH ∼ 5.5×105 in the ZnO TFTs.

目錄
指導教授推薦書.............................................................. i
口試委員會審定書........................................... ii
長庚大學博碩士論文著作授權書……………………………...………iii
致謝................................................................ iv
中文摘要............................................................. v
英文摘要........................................................ vi
目錄....................................................................... vii
圖目錄.......................................................................x
表目錄................................................................xii
第一章 緒論..................................................................1
1.1 研究動機..........................................................1
1.2 介紹....................................................3
1.2.1 薄膜電晶體導論 ....................................3
1.2.2 薄膜電晶體結構介紹....................................4
1.2.3 薄膜電晶體操作原理.................................6
1.2.4 氧化鋅晶體特性.............................. 11
1.3 論文架構.........................................................13
第二章 絕緣層/通道層之介面能帶偏移分析..........................................14
2.1 樣品製作流程................................................14
2.2 Gd2O3/ZnO能帶偏移分析..............................15
2.3 Gd2O3/ZnZrO能帶偏移分析..................................... 20
第三章 氧化鋅薄膜電晶體製作與量測.............................................24
3.1 元件製作流程.................................................................................. 24
3.2 ZnO TFT量測結果分析................................................................ 29
3.2.1 直流量測.....................................29
3.2.2 低頻雜訊量測....................................33
第四章 氧化鋅鋯薄膜分析.......................................38
4.1 氧化鋅鋯薄膜組成元素分析.........................................38
4.1.1 能量散射光譜儀量測分析 …......................................38
4.1.2 成分及鍵結型態量測分析 ...........................................41
4.1.3 X光繞射量測分析 ..........................................................44
4.2 氧化鋅鋯薄膜表面量測分析.......................................................45
4.3 薄膜電性量測分析...................................51
4.3.1 薄膜的電特性分析.......................................................... 51
4.3.2 薄膜透光度量測分析 ....................................................52
第五章 氧化鋯鋅薄膜電晶體製作與量測 ...............................................56
5.1 元件製作流程............................................... 56
5.2 ZnZrO (Cr/Al) TFT量測結果與分析…......................................57
5.2.1 直流量測..........................................57
5.2.2 低頻雜訊量測....................................................................62
5.3 ZnZrO (Ti/Au) TFT量測結果與分析.........................................66
5.3.1 直流量測....................................................66
5.3.2 低頻雜訊量測 ..................................................................70
5.4 可靠度量測與分析..........................................75
第六章 結論...........................................................79
參考文獻..................................................................80


圖目錄
圖1.1 應用在矽TFT和金屬氧化物TFT顯示器產品..........................................1
圖1.2 Top Gate和Bottom Gate TFT優缺點比較..........................................5
圖1.3 IDS-VDS特性曲線圖.............................................7
圖1.4 N-MOSFET IDS-VDS分別在(a)線性區(b)剛進入飽和區(c)飽和區 ..........8
圖1.5 (a)轉移特性IDS-VGS圖(b)轉移電導Gm圖........................................9
圖1.6 氧化鋅晶體結構............................................................. 11
圖2.1 ZnO、Gd2O3和Gd2O3/ZnO全譜圖............................................ 15
圖2.2 ZnO和Gd2O3/ZnO Zn 2p能譜圖.......................................... 16
圖2.3 ZnO和Gd2O3/ZnO Gd 4d能譜圖........................................ 17
圖2.4 Gd2O3價電帶能譜圖.........................................................18
圖2.5 ZnO價電帶能譜圖..................................................18
圖2.6 Gd2O3/ZnO的band alignment....................................19
圖2.7 ZnZrO、Gd2O3和Gd2O3/ ZnZrO全譜圖.................................. 20
圖2.8 ZnZrO和Gd2O3/ ZnZrO Zn 2p能譜圖.........................................21
圖2.9 ZnZrO和Gd2O3/ ZnZrO Gd 4d能譜圖................................ 22
圖2.10 ZnZrO價電帶能譜圖.......................................................22
圖2.11 Gd2O3/ ZnZrO的band alignment................................................23
圖3.1 ZnO TFT元件結構圖........................................................28
圖3.2 ZnO TFT IDS-VDS特性圖........................................................29
圖3.3 ZnO TFT IDS-VGS-gm特性圖................................................. 31
圖3.4 ZnO TFT Log IDS-VGS特性圖................................................31
圖3.5 ZnO TFT通道崩潰電壓特性圖..........................................32
圖3.6 ZnO TFT C-V曲線圖......................................................... 33
圖3.7 ZnO TFT SiD-Frequency特性圖........................................... 34
圖3.8 ZnO TFT SiD/ID2-Frequency特性圖.........................................35
圖3.9 ZnO TFT Log SiD/ID2- (VGS - Vth)特性圖....................................36
圖3.10 ZnO TFT和ZnZrO TFT霍格常數比較圖.........................................37
圖4.1 EDX材料元素含量圖(ZrO2 : ZnO = 80W : 150W) ...................................39
圖4.2 EDX材料元素含量圖(ZrO2 : ZnO = 100W : 150W) ................................40
圖4.3 ZnZrO薄膜XPS O 1s軌域量測圖....................................41
圖4.4 ZnZrO薄膜XPS Zn 2p軌域量測圖.......................................42
圖4.5 隨著退火溫度增加Binding Energy 增加的能帶示意圖...........................43
圖4.6 隨著退火溫度增加Zn2p3/2 Binding Energy減少的能帶示意圖............. 43
圖4.7 ZnZrO薄膜XRD量測圖...................................... 44
圖4.8 ZnZrO薄膜未退火AFM 2D量測圖.............................................45
圖4.9 ZnZrO薄膜未退火AFM 3D量測圖....................................45
圖4.10 ZnZrO薄膜100℃退火AFM 2D量測圖.................................................. 46
圖4.11 ZnZrO薄膜100℃退火AFM 3D量測圖.................................................. 46
圖4.12 ZnZrO薄膜300℃退火AFM 2D量測圖...................................................47
圖4.13 ZnZrO薄膜300℃退火AFM 3D量測圖...................................................47
圖4.14 ZnZrO薄膜500℃退火AFM 2D量測圖...................................................48
圖4.15 ZnZrO薄膜500℃退火AFM 3D量測圖...................................................48
圖4.16 ZnZrO薄膜700℃退火AFM 2D量測圖...................................................49
圖4.17 ZnZrO薄膜700℃退火AFM 3D量測圖...................................................49
圖4.18 ZnZrO薄膜在不同溫度下霍爾效應量測圖...............................................51
圖4.19 ZnO不同溫度下透光度量測圖..............................................53
圖4.20 ZnZrO不同溫度下透光度量測圖...............................53
圖4.21 ZnO不同溫度下的能隙圖......................................... 54
圖4.22 ZnZrO不同溫度下的能隙圖...................................... 55
圖5.1 Gd2O3/ZnZrO SIMS量測.................................................57
圖5.2 ZnZrO TFT IDS-VDS特性曲線圖...........................................58
圖5.3 ZnZrO TFT輸出的IDS-VGS-gm 特性曲線圖............................. 59
圖5.4 ZnZrO TFT Log IDS特性曲線圖........................................60
圖5.5 ZnZrO通道的崩潰電壓曲線圖......................................61
圖5.6 ZnZrO的C-V曲線圖..........................................................62
圖5.7 ZnZrO TFT SiD-Frequency特性圖.........................................63
圖5.8 ZnZrO TFT SiD/iD2-Frequency特性圖...................................64
圖5.9 ZnZrO TFT Log SiD/iD2-(VGS - Vth)特性圖..............................65
圖5.10 ZnZrO TFT IDS-VDS特性曲線圖........................................67
圖5.11 ZnZrO TFT輸出的IDS-VGS-gm 特性曲線圖.............................................68
圖5.12 ZnZrO TFT Log IDS特性曲線圖.......................................68
圖5.13 ZnZrO的C-V曲線圖..........................................................70
圖5.14 ZnZrO的C-V曲線圖..............................................................71
圖5.15 ZnZrO TFT SiD/ID2-Frequency特性圖........................................72
圖5.16 ZnZrO TFT Log SiD/ID2-(VGS - Vth)特性圖..............................73
圖5.17 不同TFT霍格常數比較圖.......................................74
圖5.18 PBS 3000s的ZnO TFT I-V特性圖...................................75
圖5.19 PBS 3000s的ZnZrO TFT I-V特性圖........................76
圖5.20 經由stress 3000s後ZnO TFT I-V回覆狀態特性圖.................................. 77
圖5.21 經由stress 3000s後ZnZrO TFT I-V回覆狀態特性圖.............................. 77

表目錄
表1.1 矽與金屬氧化物優缺點..................................................................................4
表4.1 ZrO2摻雜ZnO EDX含量分析(ZrO2 : ZnO = 80W : 150W) ......................39
表4.2 ZrO2摻雜ZnO EDX含量分析(ZrO2 : ZnO = 100W : 150W) ....................40
表4.3 ZnZrO各薄膜溫度下的表面粗糙度..................50
表4.4 ZnO不同退火溫度下的能隙.............................55
表4.5 ZnZrO不同退火溫度下的能隙.....................................55
表5.1 ZnZrO TFT和ZnO TFT電特性比較....................................60
表5.2 ZnZrO Ti/Au TFT和ZnZrO Cr/Al TFT電特性比較...................................69

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