臺灣博碩士論文加值系統

摘要
本篇論文的主要工作在於設計與研發一套角度可變的橢圓光譜儀。此系統的
架構主要是由固定的極化器、旋轉極化器以及固定極化器所構成的。此架構的優
點在於可以減少背景光以及光學元件中非理想的特性對於量測所造成的影響。我
們所建構的系統可以進行波長掃瞄的範圍為320到820 毫微米。為了確定此系
統的準確度與量測結果的可信度，我們量測了一塊普遍用來校正橢圓儀的標準樣
品以及砷化鎵的塊材，其實驗與分析的結果顯示我們的系統在於精確度方面已可
符合我們的需求。
我們並利用所建造的系統去探討(AlxGa1-x ) 0.52In0.48P此四元化合物的光學特
性。此系列樣品可藉由控制鋁與鎵的不同比例進而調整其整體能隙的大小，故其
成為製造可見光範圍之發光元件中相當重要的材料。我們量測了三塊不同比例的
樣品，得到其中一些與電子能帶結構有關的物理參數與成分的關係，這些結果將
可用來作為設計發光元件時的依據。
整體說來，我們已經成功地建造一部角度可變之橢圓光譜儀，並說明了藉由
適當的資料分析方法，此系統確實為探討半導體光學性質之強大的工具。

Abstract
A variable-angle spectroscopic ellipsometry (VASE) based on the configuration of a fixed polarizer, a rotating polarizer, sample, and a fixed analyzer (PRPSE) is constructed. This configuration eliminates the errors from light source residual polarization and those from the monochromator and detection system, and detailed operating method is presented. The measuring range of our system is from 320 to 820 nm.
We perform some measurements by our VASE, and the results are given in this thesis. The results of the samples, whose properties are already known, prove the accuracy and reliability of our system. The optical properties of (AlxGa1-x ) 0.52In0.48P is measured by our system also. They are attractive materials because of its potential ability in fabricating light-emitting and laser diodes in the visible-wavelength region.
In conclusion, we have successfully developed a VASE system and demonstrated its power of investigating the optical properties of semiconductors.

Chapter 1 Introduction1
Chapter 2 Theory4
2.1. Theory of Ellipsometry4
2.2. Theory of operation6
2.3. Multi-layer structure9
2.3.1 Two Phases Mode9
2.3.2 Three Phases Mode11
2.3.3 Multi-Phases Mode13
Chapter 3 Experiment17
3.1. Specifications of system17
3.2. Calibration20
3.3. Data Analysis21
Chapter 4 Results and Discussion23
4.1. Standard Check Sample23
4.1.1 Sample descriptions23
4.1.2 Results and discussion23
4.2. GaAs substrate30
4.2.1 Sample descriptions30
4.2.2 Results and Discussion30
4.3. (AlxGa1-x) 0.52 In0.48 P41
4.3.1 Sample descriptions41
4.3.2 Results and Discussion41
Chapter 5 Conclusions53
References:54
Appendix I Generalized Ellipsometry55
Appendix II Model of Dielectric Function58
Appendix III CPPB model61

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