臺灣博碩士論文加值系統

本文研究成長於藍寶石基板上之GaN薄膜顯微結構，包含GaN薄膜與基板交界處以及GaN薄膜中InGaN/GaN多層量子井結構(MQW)。GaN薄膜的表面以光學顯微鏡(OM)可觀察到磊晶過程所產生的細小線條，分別以掃描式電子顯微鏡(SEM)以及穿透式電子顯微鏡(TEM)對此線條做分析。在分析GaN薄膜時發現InGaN/GaN的位置存在V-shape defect，而且V-shape defect正上方對應著表面粗糙化之後的凹陷位置，進一步使用陰極發光(CL)與TEM分析V-shape的存在對GaN薄膜生長的影響。

The study aims at investigating the microstructures of GaN grown on sapphire substrate, including the interface between GaN and substrate as well as the InGaN/GaN multi quantum well (MQW) in GaN film. Some tiny straight lines on the surface of GaN film produced from epitaxy process can be observed by optical microscope. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to analyze the lines. When analyzing the GaN film, we discovered some V-shape defects in the InGaN/GaN and above which the roughening hollows corresponded to the defects. Therefore, we used Cathodoluminescence and TEM to further analyze the influence of V-shape defects on the growth of GaN film.

摘要……………………………………………………………………………………I
Abstract………………………………………………………………………………..II
表目錄………………………………………………………………………………..IV
圖目錄………………………………………………………………………………...V
第一章 概論…………………………………………………………………………1
1-1 前言………………………………………………………………………….…1
1-2 GaN的結構與性質…………………………………………………………..…2
1-3 藍寶石基板………………………………………………………………….…3
1-4 文獻回顧…………………………………………………………………….…5
1-5 研究動機…………………………………………………………………….10
第二章 量測系統概述…………………………………..…………………………12
2-1 X光繞射分析儀(X-ray diffraction, XRD) ……………………………12
2-2 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) …………………12
2-3陰極發光(Cathodoluminescence, CL) ………………………………………12
2-4 穿透式電子顯微鏡(Transmission Electron Microscope, TEM) ………….…13
第三章 實驗方法…………………………………………………………………..15
3-1 實驗方法與步驟……………..….…..…….…………..……….……………15
3-1-1 光學顯微鏡(OM) ………………………………..………….…………..15
3-1-2 掃描式電子顯微鏡(SEM) …………………………………………….. 15
3-1-3 穿透式電子顯微鏡(TEM) …………………………………………………16
第四章 結果與討論………………………………………………………………..17
4-1光學顯微鏡(OM)分析…………………………………………………………17
4-2掃描式電子顯微鏡(SEM)分析………………………………………………..19
4-3穿透式電子顯微鏡(TEM)分析………………………………………………..21
4-4陰極發光(CL)分析………………………….…………………………………35
第五章 結論………………………………………………………………………..37
參考文獻……………………………………………………………………………..38

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