臺灣博碩士論文加值系統

矽鍺光電元件具有與矽積體化電路整合的優點，這是因為矽鍺光電元件具有1.3至1.55 um 的波長，它可以提升光纖通訊應用的重要性。隨著各種元件的製程已經相當成熟，如在矽鍺發光元件、調變器和光偵測器等元件製程，這些都將有助於矽光電元件和光電積體電路的研究與發展。
本論文中我們先製做一個基本的金屬-氧化物-半導體結構的發光元件之後製作具有鍺奈米粒子於氧化層的金屬-氧化層-半導體結構的發光元件。本論文重點在於吾人對元件製作出不同層數的鍺奈米粒子及改變爐管退火時間，再加以量測之，想藉由增加多層數的鍺奈米粒子，來提高鍺奈米粒子捕捉電子的機率；增加退火時間，嘗試是否可提高鍺奈米粒子形成奈米粒子的密度及結成奈米粒子的完整度；以及對多層鍺奈米粒子降溫進行量測，來看改變這三樣參數對EL頻譜的影響。

The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. Because SiGe-based optoelectronic devices can be tailored from 1.3 to 1.55 um, it increases the importance of this material system to fiber communication applications. With the ripe process technology of the several key devices like SiGe-based light emitters, photodetectors, modulators, and waveguides, it also opens the door for Si-based optical and electronic integrated circuits (OEICs).
In this thesis we first fabricated a device which has the basic MOS structure and we embedded Ge nanocrystal in the oxide. This thesis point is that we fabricated different number of layer Ge nanocrystal and change post oxidation anneal time. Then we measure it. We try increasing the number of layer to increase the probability of Ge capture electron. Increase post oxidation anneal time to get whether Ge nanocrystal can form more like sphere independently.Finally, We measure our sample when we decreasing the temperature.Change these three factors and see the effect of EL

誌謝 ii
摘要 iii
Abstract iv
第一章 引言 1
1.1 研究動機 1
1-2. 論文概要 3
第二章 簡介 6
2.1非揮發性奈米晶體記憶體 8
2.2奈米晶體非揮發性記憶體的發光機制 9
第三章 元件結構與製作及量測流程 13
3-1 金屬-氧化物-半導體結構製作流程 13
3-2. 鍺量子點之金屬-氧化物-半導體結構製作流程 19
3-3. 量測儀器架設 27
3.3.1 Current-Voltage (I-V) 27
3.3.2 Luminescence Intensity (L-I) 27
3.3.3 Electroluminescence (EL) spectrum 28
第四章 實驗結果 30
4.1基本N-type MOS (normal doping) 30
4.2一層、二層及三層鍺奈米粒子金屬-氧化物-半導體結構 32
4.2.1一層、二層及三層鍺奈米粒子金屬-氧化物-半導體結構與爐管熱退火時間影響 38
4.3多層鍺奈米粒子金屬-氧化物-半導體結構 42
4.4 變溫對不同層數(五、十、十五層) 鍺奈米粒子金屬-氧化物-半導體結構之頻譜 45
第五章 實驗結果分析與討論 56
5.1 不同爐管退火時間的影響 56
5.2 不同層數鍺奈米粒子EL頻譜的影響 59
5.3 改變溫度對EL頻譜的影響 67
第六章 總結 74
參考文獻 75

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