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研究生:余昭和
研究生(外文):Choa-Ho Yu
論文名稱:使用E類模式提升AB類功率放大器之效率
論文名稱(外文):Efficiency Improvement of the Class-AB Power Amplifier adopting Class-E Mode
指導教授:翁若敏
指導教授(外文):Ro-Min Weng
學位類別:碩士
校院名稱:國立東華大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:56
中文關鍵詞:零電壓切換E類功率放大器
外文關鍵詞:ZVSE classpower amplifier
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本篇論文使用2.4GHz ISM頻段兩級式AB類功率放大器WS9901,並操作在E類放大器架構,藉以提升功率放大器整體效率的設計方法。在設計方面,採用WIN 2um HBT製程參數將兩級式AB類功率放大器模組化,再利用模組電路分析設計,採用E類放大架構是否適合於兩級式AB類功率放大器上,並也可借由模組設計出最佳的電路,避免掉功率放大器損壞的可能性,間接地改善整體效率。模擬分析完成後,實作部份採用WS9901規格書中佈局圖製作電路板,修改成E類放大架構。採用的架構是屬於一般常見的並聯電容/串聯共振式,這是因為此架構較能配合功率放大器本身的寄生電感及電容,使外部電路具有元件數少及易於設計的優點。
經採用E類放大架構之量測結果顯示,工作在2.4GHz頻段時,原本35%的功率增加效率(PAE)可藉由所提出的電路架構提升至45%,但相對的最大輸出功率表現由原23dBm變小至22dBm。
This thesis presents an attempt method using a 2.4GHz ISM band of two-stage class-AB power amplifier (PA) WS9901 configured as class-E operation in order to increase the efficiency of the PA. The two-stage class-AB PA (WS9901) can be simulated and modeled using WIN 2um HBT process. The simulated PA module is used to analyze the class-E operation and to improve the efficiency. The implementation of the PCB board adopts a layout circuit from the data sheet. The desired class-E amplifier is slightly modified by using this PCB board. The proposed class-E amplifier adopts the parallel capacitance / series resonator fabrication in order be easily applied onto the parasitic capacitance and inductance in the PA. The advantages of this method include both fewer components and simpler design.
The measurement results show that the class-E PA increases the power added efficiency (PAE) from 35% to 45% in 2.4GHz frequency band, but will decrease the maximum output power from 23dBm to 22dBm.
目錄
誌謝 I
摘要 II
Abstract III
目錄 IV
圖目錄 VI
表目錄 VIII
第1章 緒 論 1
1-1. 前言 1
1-2. 研究動機 1
1-3. 研究方法與步驟 2
1-4. 論文章節架構 3
第2章 微波電路基本理論 4
2-1. 散射參數 4
2-2. 功率增益 6
2-3. 穩定性 8
2-4. 效率 10
2-5. 雜訊 11
2-6. 失真 13
2-6-1. 諧波失真 13
2-6-2. 互調失真 13
第3章 功率放大器介紹 16
3-1. 功率放大器的種類 16
3-1-1. 電流源型(線性)放大器 16
3-1-2. 開關型(非線性)放大器 19
3-2. E類功率放大器 19
3-2-1. E類放大器基本原理及分析 20
3-2-2. E類功率放大器的負載網路 29
第4章 功率放大器分析及設計製作 34
4-1. 放大器分析及模組化 34
4-2. E類放大器分析模擬及製作 45
4-3. 量測結果 48
第5章 結論與未來研究方向 53
5-1. 結論 53
5-2. 未來研究方向 53
參考文獻 54
[1]N. Wang, X. Peng, V. Yousefzadeh, D. Maksimovic, S. Pajic, and Z. Popovic, “Linearity of X-band class-E power amplifiers in EER operation,” IEEE Transactions on Microwave Theory and Techniques, Vol. 53, pp. 1096-1102, Mar. 2005.
[2]A. Diet; C. Berland; M. Villegas, and G. Baudoin; “EER architecture specifications for OFDM transmitter using a class E amplifier,” IEEE Microwave and Wireless Components Letters, Vol. 14, pp. 389-391, Aug. 2004.
[3]Y. C. Huang, “The analysis of high test testability RF amplifiers,” Master Thesis, GICE of NTU, pp. 88-93, June 2005.
[4]D. E. Johnson, J. R. Johnson, and J. L. Hilburn, “Basic Electric Circuit Analysis,” 5th edition, Prentice Hall, 1997.
[5]G. Gonzalez, “Microwave Transistor Amplifiers Analysis and Design,” 2nd edition, Prentice Hall, 1996.
[6]S. C. Cripps, “RF Power Amplifiers for Wireless Communications,” Artech House, 1999.
[7]T. H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuit,” Artech House, 2000.
[8]N. O. Sokal, and A. D. Sokal, “Class E-A new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE Journal of Solid-State Circuit, Vol. 10, pp. 168-176, June 1975.
[9]F. H. Raab, and N. O. Sokal, “Transistor power losses in the class E tuned power amplifier,” IEEE Journal of Solid-State Circuits, Vol. 13, pp. 912-914, Dec. 1978.
[10]M. K. Kazimierczuk, and K. Puczko, “Exact analysis of class E tuned power amplifier at any Q and switch duty cycle,” IEEE Transactions on Circuits and Systems, Vol. 34, pp. 149-159, Feb. 1987.
[11]B. E. Klehn, and S. S. Islam, “An exact analysis of Class-E power amplifiers for RF communications,” Proceedings of the International Symposium on Circuits and Systems, Vol. 4, pp. IV - 277-80, May 2004.
[12]F. Raab, “Idealized operation of the class E tuned power amplifier,” IEEE Transactions on Circuits and Systems, Vol. 24, pp. 725-735, Dec 1977.
[13]S. D. Kee, I. Aoki, A. Hajimiri, and D. Rutledge, “The Class-E/F Family of ZVS swithching amplifiers,” IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 6, June 2003.
[14]S. C. Wong, and C. K. Tse, “Design of Symmetrical Class E Power Amplifiers for Very Low Harmonic-Content Applications,” IEEE Transactions on Circuits and Systems, Vol. 52, pp.1684-1690, Aug. 2005.
[15]朱健程, “高效率2.4GHz E類功率放大器單晶微波積體電路及模組之設計與實作,” 國立中山大學電機工程學系碩士論文, July 2003.
[16]A. V. Grebennikov, “Load network design techniques for class E RF and microwave amplifiers,” High Frequency Electronics, pp. 18-32, July 2004.
[17]T. Mury, and V. F. Fusco, “Series-L/parallel-tuned comparison with shunt-C/series-tuned class-E power amplifier,” IEE Proceedings Circuits, Devices and Systems, Vol. 152, No. 6, Dec. 2005.
[18]A. V. Grebennikov, and H. Jaeger, “Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers,” IEEE MTT-S International Microwave Symposium Digest, Vol. 3, pp. 1627-1630, June 2002.
[19]A. V. Grebennikov, “Exact time-domain analysis of class E power amplifiers with Quarter-wave transmission line”, High Frequency Electronics, Vol. 3, No. 7, July 2004.
[20]M. Kazimierczuk, “Class E tuned power amplifier with shunt inductor,” IEEE Journal of Solid-State Circuits, Vol. 16, pp. 2-7, Feb. 1981.
[21]Winspring Wireless Technologies WS9901 Linear Power Amplifier data sheet.
[22]W. C. Chen, “The correlation and application between IMR and ACPR for broadband signals in microwave and millimeter-wave frequencies,” Master Thesis, GICE of NTU, pp. 86-87, June 2005.
[23] WIN 2 _HBT Design Kit Device Model Handbook, Rev.1.4.1.
[24]K. Yamauchi, K. Mori, M. Nakayama, Y. Itoh, Y. Mitsui, and O. Ishida, “A novel series diode linearizer for mobile radio power amplifiers,” IEEE MTT-S International Microwave Symposium Digest, Vol. 2, pp. 831-834, June 1996.
[25]K. Yamauchi, K. Mori, M. Nakayama, Y. Mitsui, and T. Takagi, “A microwave miniaturized linearizer using a parallel diode with a bias feed resistance,” IEEE Transactions on Microwave Theory and Techniques, Vol. 45, pp. 2431-2435, Dec. 1997.

[26]T. Yoshimasu, M. Akagi, N. Tanba, and S. Hara, “An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications,” IEEE Journal of Solid-State Circuits, Vol. 33, pp. 1290-1296, Sept. 1998.
[27]E. A. Jarvinen, and M. J. Alanen, “GaAs HBT class-E amplifiers for 2-GHz mobile applications,” IEEE Radio Frequency integrated Circuits Symposium Digest, pp. 421-424, Jun. 2005.
[28]S. Pajic, N. Wang; P. M. Watson, T. K. Quach, and Z. Popovic, “X-band two-stage high-efficiency switched-mode power amplifiers,” IEEE Transactions on Microwave Theory and Techniques, Vol. 53, pp. 2899-2907, Sept. 2005.
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