臺灣博碩士論文加值系統

高介電氧化鋯薄膜是金氧半電晶體(Metal-oxide-semiconductor transistor，MOS)的閘極氧化物及動態隨機存取記憶體(dynamic random access memory, DRAM)的電容器中具有潛力的材料。本研究是利用磁控濺鍍法(Magnetron sputtering deposition)在P型矽晶片Si(100)以及玻璃為基板上將沈積的氧化鋯薄膜、氧化矽薄膜及矽酸鋯複合薄膜等做為介電層應用的特性研究。我們利用氧化鋯粉末、氧化矽粉末，以及兩者以不同體積比混合的粉末來製作磁控濺鍍所需要的靶材。在實驗規劃中，藉著改變基板溫度、濺鍍功率、退火溫度等參數對鍍膜的各項特性進行量測分析，包括：顯微結構、成長速率、機械性質、光學特性及電特性等。
實驗結果顯示，除了靶材中添加10 %SiO2有產生結晶之外，其餘系統皆為表面平坦的非晶質膜；鍍膜成長速率隨靶材SiO2含量、濺鍍功率增加而提高，最高達10 nm/min。鍍膜的內應力為壓應力，與玻璃基板的附著力良好。臨界荷重值最高可達21.2 N，鍍膜硬度值為2~12 GPa之間。折射率最高可達2.17，穿透率受靶材成分所影響，以SiO2系統最高，達90 %。鍍膜相對介電常數最高為32，電阻係數受靶材成分影響其值在10^9ohm-cm以上，退火處理有助於提高其值。崩潰電場皆在3 MV/cm以上。

The developments of future gate oxide of MOS device for ULSI technology and next-generation capacitor of DRAM devices for memory storage require new dielectric materials. There is significant interest in using ZrO2 for the fabrication of charge storage insulators in the next generation memories.
In this study, thin films of zirconia, silica, and zirconium silicate were deposited on Si(100) and glass substrates by R.F. magnetron sputtering from zirconia, silica and zirconium silicate composite ceramic targets instead of metal targets. This research was focused on the evaluations of film growth kinetics, microstructure, mechanical properties, optical properties, and electrical properties.
The results showed the films were structurally amorphous, besides 90 ZrO2-10 SiO2 system. The surface morphology of all films were smooth and dense. Their growth rates increased as the silica content and R.F. power increased. The maximum growth rate was nearly 10 nm/min. Regarding to mechanical properties, residual stress was compressive for all films, the hardness of thin films was in the range of 2~12 GPa, and there was a good adhesion to glass substrates with a the maximum critical load of 21.2 N. The refraction index showed a maximum value of 2.17 for pure ZrO2 system. The transmittance with a maximum value of 90 % for pure SiO2 system was influenced by ZrO2 content in targets. In respect of electric properties, the dielectric constant which varied with target composition had a highest of 32. The resistivity was higher than 109 ohm-cm, with a higher value after annealing. The breakdown fields were meassured with values higher than 3 MV/cm.

目 錄
頁次
中文摘要………………………………………………………………..Ⅰ
英文摘要………………………………………………………………..Ⅱ
目錄……………………………………………………………………..Ⅲ
圖目錄…………………………………………………………………..Ⅵ
表目錄……………………………………………………………….. XV
第一章 緒論
1.1 前言…………………………………………………………….1
1.2 研究目的與內容……………………………………………….2
第二章 理論基礎與文獻回顧………………………………………… 3
2.1 氧化矽與氧化鋯……………………………………………….3
2.2 SiO2薄膜系統………………………………………………….3
2.2.1 SiO2結構特性………………………………………….3
2.2.2 SiO2薄膜前人研究…………………………………….4
2.3 ZrO2薄膜系統………………………………………………….5
2.3.1 ZrO2結構特性………………………………………….5
2.3.2 ZrO2薄膜前人研究…………………………………….6
2.4 介電薄膜的製備方式………………………………………….7
2.4.1 濺鍍法(sputtering) [67-68]………….……………8
2.4.2 雷射剝鍍法(Laser ablation)[69-70]………………8
2.4.3 離子束濺鍍[68-69]……………………………………9
2.4.4 有機金屬化學氣相沈積法(MOCVD)[71]………………9
2.4.5 有機金屬分解法與溶液凝膠法[72-73]…………….10
2.5 物理鍍膜技術概述[74]………………………………………10
2.5.1 電漿理論[75-76]…………………………………….10
2.5.2 射頻磁控濺鍍原理[74]………………………………12
2.5.3 薄膜沈積機制[76]……………………………………13
2.5.4 濺鍍率[79]……………………………………………16
2.5.5 基板溫度效應…………………………………………16
2.5.6 熱膨脹係數效應[80]…………………………………17
2.6 電性機制……………………………………………………..17
2.6.1 介電性[81-82]……………………………………….17
2.6.2 極化機制[81,83-84]…………………………………18
2.6.3 漏電流機制[80,83]………………………………….19
2.6.4 依時性介電崩潰[85]…………………………………20
2.6.5 介電強度[84]…………………………………………20
2.6.6 介電損失………………………………………………21
第三章 實驗方法與步驟……………………………………………..34
3.1 實驗系統設備說明…………………………………………..34
3.2 實驗流程……………………………………………………..35
3.3 靶材製作與材料選擇………………………………………..35
3.3.1 靶材製作………………………………………………35
3.3.2 材料選擇………………………………………………36
3.4 基板種類與準備……………………………………………..36
3.4.1 基板種類………………………………………………36
3.4.2 基板準備………………………………………………36
3.5 薄膜沈積……………………………………………………..37
3.5.1 實驗參數設定與沈積步驟……………………………37
3.6 薄膜性質量測與分析………………………………………..37
3.6.1 分析設備與方法………………………………………38
第四章 結果與討論…………………………………………………..44
4.1 XRD結構分析………………………………………………...44
4.2 表面型態觀察………………………………………………..44
4.3 成長速率研究………………………………………………..45
4.4 殘留應力研究………………………………………………..46
4.5 硬度以及楊氏係數量測……………………………………..46
4.6 刮痕臨界荷重測試…………………………………………..49
4.7 折射率研究…………………………………………………..50
4.8 穿透率研究…………………………………………………..51
4.9 相對介電常數與介電損失量測……………………………..52
4.10 電阻係數量測……………………………………………….53
4.11 退火後相對介電常數與介電損失量測…………………….53
4.12 退火後電阻係數量測……………………………………….54
4.13 退火前後崩潰電場量測…………………………………….54
第五章 結論…………………………………………………………..97
參考文獻………………………………………………………………..99
致謝…………………………………………………………………….105

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