臺灣博碩士論文加值系統

本 實 驗 以 電 鍍 法 製 備 銅 銦 鎵 硒 (CIGS) 。 首 先 於 不 銹 鋼 (stainless
steel,S.S.)片上先進行銅(Cu)之析鍍，並改變不同參數，找出鍍銅較佳條件。
再利用田口法之 L18 表進行銦(In)及鎵(Ga)之析鍍，藉以找出最佳參數，
接著將已析鍍之 In/Cu/S.S.及 In/Ga/Cu/S.S.試片進行硒化處理，條件為在氬
氣氛下 500℃並持溫 1 小時。使用場發掃瞄式電子顯微鏡(FE-SEM)、X 光
繞射儀(XRD)及能量分散式光譜儀(EDS)來分析 CIGS 之表面型貌成份及結
構。
結果顯示，以田口法析鍍 Cu/In 層時之最佳參數是︰電流為 25mA，
pH=11、InCl 3 濃度為 150mM、酒石酸鉀鈉濃度為 1M、時間為 30min。而
以田口法析鍍之 Cu/Ga 層時之最佳條件是︰電流為 60mA、pH=11.5、GaCl 3
濃度為 75mM、檸檬酸鈉濃度為 1M、電鍍時間為 40min。
以 XRD 觀察硒化過後之 In/Cu/S.S.試片發現到存有 CGS 相，而
In/Ga/Cu/S.S.之結構，發現到存有 CGS 相。在 EDS 成份分析下，發現
In/Ga/Cu/S.S.的 In 含量較少，使得 In/Ga/Cu/S.S.之 In 含量較少，而無法經
過硒化處理得到 CIGS 相。

In this study, the CuInGaSe 2 is prepared by electrodeposition. First of all,
Cu is electrodeposited onto stainless steel and to find out the best condition to
deposit Cu by changing different parameters. Second, Indium and Gallium
were electrodeposited by using Orthogonal array of L 18 . Final, that the
In/Cu/S.S. and In/Ga/Cu/S.S be selenized, and the selenized condition is heated
at 500℃ for 1hour in Argon atmosphere. The CIGS should be characterized by
XRD, FE-SEM and EDS.
The results show the best parameters for the electrodeposition of Cu/In
layer by Taguchi method (current : 25mA, pH : 11, InCl 3 solution: 150mM and
KNaC 4 H 4 O 6．4H 2 O solution: 1M and the deposition time is 30 minutes.) The
results show the best parameters for the electrodeposition of Cu/Ga layer by
Taguchi method (current : 60mA, pH : 11.5, GaCl 3 solution : 75mM and
C 6 H 5 Na 3 O 7 solution : 1M and the deposition time is 40 minutes.)
After selenided, by using XRD, CIS phase has be found in In/Cu/S.S. and
CGS phase has be found in In/Ga/Cu/S.S.. After EDS analysis, the content of
In in In/Ga/Cu/S.S. is too low to make it to be CIGS.

IV
目錄
摘要................................................................................................... I
Abstract ............................................................................................ II
誌謝.................................................................................................III
目錄.................................................................................................IV
圖目錄........................................................................................... VII
表目錄..............................................................................................X
第一章 緒論 ..............................................................................1
1-1 前言................................................................................................ 1
1-2 研究動機........................................................................................ 2
1-3 研究目的........................................................................................ 3
第二章 原理介紹 ......................................................................5
2-1 太陽能電池之簡介........................................................................ 5
2-1-1 CI(G)S 太陽能電池之簡介 ............................................... 7
2-1-2 CI(G)S 薄膜之基本性質 ................................................... 9
2-2 CI(G)S 太陽能電池製備方式之簡介 ..........................................11
2-2-1 共蒸鍍(Co-evaporation) ...................................................11
2-2-2 濺鍍(sputtering) ............................................................... 12
2-2-3 硒化合成(selenization) .................................................... 13
V
2-2-4 噴塗（Spray Pyrolysis）................................................. 14
2-2-5 電鍍(Electrodeposition) ................................................... 14
2-3 電鍍之介紹.................................................................................. 18
2-3-1 電鍍法簡介及原理.......................................................... 18
2-3-2 脈衝電鍍之簡介.............................................................. 27
第三章 實驗步驟與分析方法 ................................................31
3-1 藥品與儀器.................................................................................. 31
3-1-1 實驗藥品.......................................................................... 31
3-1-2 實驗儀器.......................................................................... 32
3-2 實驗步驟...................................................................................... 34
3-2-1 前處理.............................................................................. 34
3-2-2 電鍍銅.............................................................................. 34
3-2-3 電鍍 Cu/In........................................................................ 34
3-2-4 電鍍 Cu/Ga....................................................................... 35
3-2-5 電鍍 Cu/Ga/In .................................................................. 35
3-2-6 硒化處理.......................................................................... 35
3-2-7 試片分析.......................................................................... 35
第四章 結果與討論 ................................................................37
4-1 電鍍銅.......................................................................................... 37
4-2 CuInSe .......................................................................................... 46
4-2-1 以 L18 表設計 In 電鍍參數 ............................................ 46
VI
4-2-2 Cu/In 之 SEM 表面形貌分析.......................................... 48
4-2-3 Cu/In 之 XRD 繞射分析 ................................................. 49
4-2-4 Cu/In 經硒化後之 SEM 表面形貌分析.......................... 59
4-2-5 Cu/In 經硒化後之 XRD 繞射分析 ................................. 59
4-3 CuInGaSe ..................................................................................... 62
4-3-1 以 L18 表設計 Ga 電鍍參數........................................... 62
4-3-2 Cu/Ga 之 SEM 表面形貌分析 ........................................ 63
4-3-3 Cu/Ga 之 XRD 繞射分析 ................................................ 64
4-3-4 Cu/Ga/In 經硒化後之 SEM 表面形貌分析.................... 74
4-3-5 Cu/Ga/In 經硒化後之 XRD 繞射分析............................ 74
第五章 結論 ............................................................................77
參考文獻.........................................................................................78

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