臺灣博碩士論文加值系統

氮化鎵高速電子遷移率電晶體之優秀高功率特性使得氮化鎵系列電晶體非常適合高功率元件應用，此外，氮化鎵與矽基板之整合技術更使其有可量產及低成本製造之優勢。本論文將著重於氮化鎵功率元件之性能增強技術開發，其包含表面處理技術、鈍化層內電荷之探討、及高臨界電壓增強型氮化鎵元件。首先我們在鈍化層沉積之前利用氮氣電漿處理得到高品質之介面於鈍化層及氮化鋁鎵之間，經過處理後的元件特性有明顯的提升。第二部份將探討鈍化層內電荷對元件之影響，由於氮化鎵高速電子遷移率電晶體之能帶工程結構，結果顯示出其鈍化層內電荷會有效的影響其二維電子氣之濃度。最後一部分是闡述利用電荷缺陷儲存結構搭配鐵電材料的複合閘極介電層達到高臨界電壓增強型之氮化鎵高速電子遷移率電晶體，元件表現出高臨界電壓5.2 V，其最大電流值為700 mA/mm。

GaN-based High Electron Mobility Transistors (HEMTs) have demonstrated outstanding high-power performance making them suitable for power switching applications. Besides, the integration of GaN HEMTs on Si substrate provides mass production and low cost fabrication. This thesis focuses on the developments of GaN power devices for enhancing device performance, consisting of surface treatment techniques, investigation of charge passivation, and high threshold voltage (Vth) enhancement mode (E-mode) GaN devices. First of all, the nitrogen plasma treatment (referred as N-passivation) prior to passivation layer deposition demonstrates a high quality interface between passivation layer and AlGaN layer. The device with N-passivation exhibited improvements in device performance. Second, the investigation of charge passivation proved that the charges in the passivation layer effectively affect the two-dimensional electron gas (2DEG) carrier density due to the bandgap engineering structure of GaN HEMTs. Finally, we demonstrated a high threshold voltage E-mode GaN MIS-HEMTs using charge trap dielectric stack with ferroelectric HfZrO2. The devices exhibit high Vth of 5.2 V with IDS,max of 700 mA/mm.

摘要 I
Abstract II
Contents V
Table Captions VI
Figure Captions VII
Chapter 1 Introduction 1
1.1 GaN Materials 1
1.2 Basics of AlGaN/GaN HEMTs 2
1.3 Next Generation GaN HEMT Power Device 4
1.4 Motivations and Thesis Contents 5
Chapter 2 GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications 14
2.1 Introduction 14
2.2 Experiment 15
2.3 Results and Discussion 16
2.4 Summary 21
Chapter 3 Effective Passivation with High-density Positive Fixed Charges for GaN MIS-HEMTs 29
3.1 Introduction 29
3.2 Experiment 31
3.3 Results and Discussion 32
3.4 Summary 35
Chapter 4 High Threshold Voltage E-mode GaN MIS-HEMT 44
4.1 Introduction 44
4.2 Experiment 45
4.3 Results and Discussion 45
4.4 Summary 48
Chapter 5 Conclusion 57
References 58
Curriculum Vitae 64
Publication List 65
Patent 65

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