[1]T. W. Odom, J. L. Huang, P. Kim, and C.M. Lieber, “Atomic structure and electronic properties of single-walled carbon nanotubes”, Nature, pp. 62 (1998)
[2]H. Dai, J. Kong, C. Zhou, N. Franklin, T. Tmobler, A. Cassell, S. Fan, and M. Chapline, “Controlled chemical routes to nanotube architectures, physics, and devices”, Journal of Physical Chemistry, pp. 11246 (1999).
[3]S. J. Tans, R. M. Verschueren, and C. Dekker, “Room-temperature transistor based on a single carbon nanotube”, Nature, pp. 49 (1998)
[4]M. S. Fuhrer, J. Nygard, L. Shih, M. Forero, Y. G. Yoon, M. S. C. Mazzoni, H. J. Choi, J. Ihm, S. G. Louie, A. Zettl, and P. L. McEuen, “Crossed nanotube junctions”, Science, pp. 494 (2000)
[5]P. G. Collins, M. S. Arnold, P. Avouris, “Engineering carbon nanotubes and nanotube circuits using electrical breakdown”, Science, pp.706 (2001)
[6]Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. Dai,E. W. Seelig, and R. P. H. Chang, “A nanotube-based field-emission flat panel display” ,Appl. Phys, pp. 2912 (1998)
[7]Yiming Li ,Hung-Mu Chou ,Jam-Wem Lee, Bo-Shian Lee, “A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors”, Microelectronic Engineering, pp. 434 (2005.)
[8]S. Heinze, J. Tersoff , R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, “Carbon Nanotubes as Schottky Barrier Transistors” ,Phys. Rev. Letter, pp. 106801 (2002)
[9]T. Iwasaki , R. Morikane , T. Edura , M. Tokuda , K. Tsutsui ,Y. Wada a,b, H. Kawarada, “Growth of dense single-walled carbon nanotubes in nano-sized silicon dioxide holes for future microelectronics”, Carbon, pp. 2351 (2007)
[10]Karl E. Spear, John P. Dismukes, Synthetic diamond, The Electrochemical Society Series, (1993)
[11]S. -Tong Lee, a, Zhangda Linb and Xin Jiangc, “CVD diamond films: nucleation and growth”, Materials Science and Engineering, pp. 123 (1999)
[12]Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 3 (1994)
[13]A. J. Neves, Maria Helena Nazaré, Properties, Growth and Applications of Diamond, EMIS Group, Institution of Electrical Engineers (2001)
[14]Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 288 (1994)
[15]Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 9 (1994)
[16]Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 375 (2001)
[17]C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, “Physical properties of thin-film field emission cathodes with molybdenum cones”, J. Appl. Phys, pp. 5248 (1976)
[18]G. G. P. van Gorkom and A. M. E. Hoeberechts, “Performance of silicon cold cathodes”, J. Vac. Sci. Technol, pp.108 (1986).
[19]F.J.Himpsel, J.A.Knapp, J.A.Van Vechten, and D.E.Eastman, “Quantum photoyield pf diamond (111) – A stable negative-affinity surface,” PhysRev ,pp. 624 (1979)
[20]C.Jany,F.Foulon,P.bergonzo,A.Brambilla,F.silva,A.Gicquel,T.Pochet,“Influence of the crystalline structure on the electrical properties of CVD diamond films”,Diamond and Related Materials,pp.741 (1996)
[21]G.H.Johnson, A.R.Badzian and M.W.Geis, Diamond and Diamondlike Materials Synthesis, MRS, Pittsburgh (1988)
[22]Gordon Davies, Simon C. Lawson, Alan T. Collins, Alison Mainwood, and Sarah J. Sharp, “Vacancy-related centers in diamond”,Diamond Relat.Mater, pp. 13157 (1992)
[23]陳培麗，鑽石與類鑽薄膜簡介，科儀新知，第82頁，(1991)[24]R.W.G.Wyckoff, Crystal Structures，Interscience，New York, (1964)
[25]B.T.Kelly,Physics of Graphite,Applied Science,London, (1981)
[26]M. A. Tamor, W. C. Vassell, “Raman “fingerprinting” of amorphous carbon films,” J. Appl. Phys, pp. 3823 (1994)
[27]D. W. Han, S. M. Jeong, H. K. Baik, S. J. Lee, N. C. Yang, D. H. Suh,“Electron injection enhancement by diamond-like carbon film in organic electroluminescence devices,” Thin Solid Films, pp. 190 (2002)
[28]Pawer, K. W. Nugent, Y. Lifshitz, G. D. Lempert, E. Grossman, J. Kulik, I. Avigal, R. Kalish, “ Systematic variation of the Raman spectra of DLC films as a function of sp2:sp3 composition,” Diamond and Related Materials, pp. 433 (1996)
[29]J.J. Cuomo, D.L. Pappas, J.Bruley, J.P. Doyle and K.L.Saenger, Vapor Deposition Processes for AmorphousCarbon Films with sp3 Fractions Approaching Diamond”,J. Appl. Phys, pp. 1706 (1991)
[30]C. Weissmantel, “Ion Based Growth of Special Films:Techniques and Mechanisms”, Thin Solid Films, pp. 55 (1982)
[31]Y. Lifshitz, S.R. Kasi and J.W. Rabelais,“Molecular-Dynamics of Amorphization by Introduction of Chemical Order in Crystalline NiZr2”, Phys, pp. 10468 (1990)
[32]J. Koike, D.M. Parkin and T.E. Mitchell, “Displacement Energy Threshold for Type IIa Diamond”, Appl. Phys.Lett, pp. 1450 (1992)
[33]D.R. Mckenzie, D. Muller and B.A, Pailthorpe,“Compressive Stress-Induced Formation of Thin-Film Tetrahedral Amorphous Carbon”,Phys.Rev.Lett, pp. 773 (1992)
[34]B.A. Pailthorpe, “Molecular-Dynamics Simulation of Atomic Process at the Low Temperature Diamond(111) surface”, J. Appl. Phys, pp. 543 (1991)
[35]H.P. Kaukonen and R,M, Nieminen, “Molecular-Dynamics of the Growth of Diamondlike Films by Energetic Carbon-Atim Beams”, Phys. Rev. Lett, pp. 620 (1992)
[36]J. Robertson, “Mechanical Properties and Structure of Diamond-like Carbon”,Diamond Relat.Mater, pp. 984 (1993)
[37]C.A. Davis, “A Simple Model for Formation of Compressive Stress in Thin Films by Ion Bombardment”, Thin Solid Films, pp. 30 (1993)
[38]Jong-Hee Park, T. S. Sudarshan, Chemical Vapor Deposition, The materials information society (1989)
[39][39] R. F. Davis Noyes, Diamond Films and Coatings, Noyes publications, pp.69 (1993).
[40]Prasanta Kumar Datta, James Sinclair Gray, Royal Society of Chemistry (Great Britain) , Surface Engineering: Fundamentals of coatings , Royal Society of Chemistry, pp. 219 (1993)
[41]Huimin Liu, David S. Dandy, Diamond chemical vapor deposition, Noyes publications,(1996)
[42]X. Jiang, W. J. Zhang, M. Paul, and C.-P. Klages, “Diamond film orientation by ion bombardment during deposition”, Appl. Phys. Lett, pp. 1927 (1996)
[43]W. J. Zhang and X. Jiang, “The growth characteristics of (001) oriented diamond layers on (111) diamond face via bias-assisted chemical vapor deposition”, Appl. Phys. Lett, pp. 2195 (1996).
[44]Sumio Iijima, Yumi Aikawa, and Kazuhiro Baba, “Early formation of chemical vapor deposition diamond films”, Appl. Phys. Lett, pp. 2646 (1990)
[45]Paul A. Dennig and David A. Stevenson, “nfluence of substrate topography on the nucleation of diamond thin films”, Appl. Phys. Lett, p1562 (1992).
Y. Liu , C. Liu, Y. Chen, Y. Tzeng, P. Tso, I. Lin, “Effects of hydrogen additive on microwave plasma CVD of nanocrystalline diamond in mixtures of argon and methane” ,Diamond Related Mater,pp. 671 (2004)
[46]S. Matsumoto, Y. Sato, M .Kamo, and N. Setaka, “Vapor Deposition of Diamond Particles from Methane” ,Japanese J. Appl. Phys, pp. 183 (1982)
[47]Suneet Arora, V.D. Vankar, “Field emission characteristics of microcrystalline diamond films:Effect of surface coverage and thickness”,Thin Solid Films, pp. 1963 (2006).
[48]S. Matsumoto, M. Hino, T. Kobayashi, “Synthesis of Diamond Films in a rf induction Thermal Plasma”, Appl. Phys. Lett, pp. 737 (1987)
[49]D. E. Meyer, R. O. Dillon, J. A. Woollam, “Radio-frequency Plasma Chemical Vapor Deposition Growth of Diamond”,J. Vac. Sci. Technol., pp.2325 (1989)
[50]S. J. Kim, B. K. Jul, Y. H. Lee, B. S. Park, IEEE, 7-12, p526 (1996).
[51]O. Groning, O. M. Kuttel, C. H. Emmenegger, P. Groning and L. Schlapbach, “Field emission properties of carbon nanotubes”, J. Vac. Sci. technol, pp. 665 ( 2000)
[52]F. Paschen, Wied. Ann,p69 (1889).
[53]J. R. Zeidler, C. A. Hewett, R. Nguyen and C. R. Zeisse, “A diamond driver-active load pair fabricated by ion implantation”, Diamond Related Mater, pp. 1341 (1993)
[54]Gordon Davies, Properties and growth of diamond, INSPEC, the Institution of Electrical Engineers, London, UK, pp.323 (1994)
[55]S. Ghodbane, A. Deneuville, “Specific features of 325 nm Raman excitation of heavily boron doped polycrystalline diamond films”, Diamond & Related Materials, pp. 589 (2006).
[56]K.G. Saw, J. du Plessis, Materials Letters, pp. 1344 (2004)
[57]Somu Kumaragurubaran, Takatoshi Yamada, and Shinichi Shikata, “Core Level Photoelectron Spectroscopic Study on Oxidized Phosphorus-Doped
[58](100) Diamond Surfaces after Vacuum Annealing”, Japanese Journal of Physics, pp. 4 (2009)
[59]Hyung Soo Uh, Sung Woo Ko, Kong Duk Lee, “Growth and field emission properties of carbon nanotubes on rapid thermal annealed Ni catalyst using PECVD”, Diamond & Related Materials,pp. 850 (2005)
[60]C. Y. Zhi, X. D. Bai, E. G. Wang, “Enhanced field emission from carbon nanotubes by hydrogen plasma treatment”, Appl.