Abstract(in Chinese) i
Abstract(in English) iii
Content v
Table Captions viii
Figure Captions ix
Chapter 1 Introduction 1
1.1 Back Ground: III-Nitride Systems 1
1.2 GaN-Based Materials 2
1.3 Motivation 3
1.4 Organization of this Thesis 4
Bibliography-Chapter 1 7
Chapter 2 Basic Theory and Measurement Systems 12
2.1 Metal Organic Chemical Vapor Deposition (MOCVD) Systems 12
2.1.1 Reactor 12
2.1.2 In-Situ Reflectance Monitoring 13
2.1.3 Chemical Reaction 13
2.2 Two-Dimensional Electron Gas 14
2.3 Theory of Metal-Semiconductor Contact 15
2.4 Principle of the MSM Photodetectors 16
2.5 Parameters of Photodetectors 17
2.6 Schottky Barrier Height 18
2.6.1 Current-Voltage Method 19
2.6.2 Current-Temperature Method 19
2.7 The Principle of Fabrication and Measurement Systems 20
2.7.1 High Resolution X-Ray Diffraction (HRXRD) 20
2.7.2 Atomic Force Microscopy (AFM) 21
2.7.3 Scanning Electron Microscope (SEM) 21
2.7.4 Temperature-Dependent Photoluminescence (TDPL) 22
2.7.5 The Responsivity Measurement Systems 23
Bibliography-Chapter 2 31
Chapter 3 Fabrication and Characterization of GaN-Based MSM PDs with Different Electrodes Structures 35
3.1 Introduction 35
3.2 Crystal Growth and Structure Design 36
3.3 Device Fabrication 36
3.3.1 PDs with Planar Electrodes 37
3.3.2 PDs with Recessed Electrodes 37
3.4 The Material Analyses of Fabricated GaN Film and GaN MQWs 39
3.5 Characteristics of the GaN-Based MSM PDs 39
3.6 Summary 41
Bibliography-Chapter 3 49
Chapter 4 Fabrication and Characterization of the GaN/InGaN MQWs MSM PDs 53
4.1 Introduction 53
4.2 The GaN/InGaN MQW PDs with Different In Compositions 54
4.2.1 Crystal Growth and Structure Design 54
4.2.2 Device Fabrication 54
4.2.3 The Material Analyses of MQW with Different In Compositions 55
4.2.4 Characteristics of MQW MSM PDs with Different In Compositions 57
4.3 The GaN/InGaN MQW PDs with Different Periods 58
4.3.1 Crystal Growth and Structure Design 58
4.3.2 Device Fabrication 59
4.3.3 The Material Analyses of MQW with Different Periods 61
4.3.4 Characteristics of MQW MSM PDs with Different Periods 62
4.4 The GaN/In0.35Ga0.65N MQW PDs with Different Electrodes’ Metals 63
4.4.1 Crystal Growth and Structure Design 63
4.4.2 Device Fabrication 64
4.4.3 The Material Analyses of MQW 65
4.4.4 Characteristics of MQW PDs with Different Electrodes’ Metals 66
4.5 Summary 67
Bibliography-Chapter 4 91
Chapter 5 Conclusions and Future Works 93
5.1 Conclusions 93
5.2 Future Works 94
Bibliography-Chapter 5 97
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