臺灣博碩士論文加值系統

在半導體製程技術進入毫微米製程之後，晶圓所需求的平坦度非常的重要，而化學機械研磨（Chemical Mechanical Polishing；CMP）是少數能提供全面性表面平坦化（Global Surface Planarization）的重點技術。然而在實際運用上，這項技術還受限於一些製程系統整合上的問題，其中有效的即時製程終點量測系統（In-situ Endpoint Detection System）是影響CMP製程平坦化的重要關鍵。若未能有效地監測CMP運作，便無法避免晶圓產生研磨過度或研磨不足的情況發生。
早期是靠研磨平台扭矩作為終點量測系統，為了檢測晶圓平坦化終點，利用晶片層轉變所產生摩擦變化引起的拋光力的變化。本研究經評估後考慮採用摩擦力偵測裝設在化學機械研磨的機台特定的機構上直接偵測晶圓研磨時的剪力所產生位移的訊號，並使用位移量和訊號電壓的變化將轉換成有效頻譜繪製分析。從偵測晶圓表面情況與位移頻譜間兩者的關係，歸納出晶圓研磨時產生的各種不同的頻譜所代表的意義，進而發展出一種即時化學機械研磨製程終點檢測系統。本研究利用系統參數分析，建立高敏感度且穩定的訊號監測機制，藉助化學機械研磨的模擬程式，與半導體工業級研磨機台上實際地去擷取訊號數據與實際研磨成品測試資料，驗證出本研究所的規劃與建立系統上的實用性與可靠性。

At present, chemical mechanical polishing (CMP) is the technique to achieve global surface planarization in integrated-circuit production. However, CMP is still limited to the integration problems in production system. An urgent issue of CMP is the requirement of efficient in-situ endpoint detection (EDP) system to monitor its operation to avoid over polishing and incomplete polishing.
Conventional EDP system relies on the platform torque to detect the end of polishing, i.e., it adopts the change of friction force corresponding to the change on wafer surface to monitor the variation of polishing force. This study intends to install the detection apparatus in CMP system which may directly detect the displacement induced by the shear force during wafer polishing. By converting the displacement to electrical signal, the real-time signal ratio during CMP process could be established for subsequent analysis. This study performs the system parameter analysis to establish a sensitive and stable signal detection method. The CMP simulation machine and a commercially available CMP system were adopted to retrieve the signal data and the real-time grinding data to verify the feasibility of signal detection system in order to establish an in-situ EDP system for CMP.

中文摘要 III
英文摘要 IV
誌謝 V
目錄 VI
圖目錄 IX
表目錄 XII
符號說明 XIII
第一章 1
1.1 國際半導體技術藍圖與領導方針 1
1.2 什麼是化學機械研磨 3
1.3 為什麼需要化學機械研磨 5
1.4 CMP在進階式邏輯裝置應用 8
1.5 化學機械研磨的優缺點 9
1.6 為何需要終點量測 10
第二章 11
2.1 前言 11
2.2 文獻回顧 11
2.3 研究背景內容 12
2.3.1 剪力的轉換 12
2.3.2 近距離的量測位移量 13
2.3.3 可繞曲式的主軸 13
2.4 研究動機 14
第三章 16
3.1 馬達電流或扭矩終點監測 16
3.2 光學終點監測 17
3.3 感應式電流 17
3.4 摩擦界面終點量測 19
3.4.1 原理與應用 19
3.4.2 偵測感應器硬體設置 20
3.4.3 作動流程 22
3.5 各種終點監測的優缺點 23
第四章 實驗數據及研究討論 24
4.1 SAC和W晶圓層的特性和成長過程 24
4.1.1 鰭式場效應晶體管製造流程 24
4.1.2 為什麼需要SAC (Self-aligned contacts)自我對準觸點 25
4.1.3 在製程上移除SAC的過程 27
4.1.4 為什麼需要W (Tungsten Plug)作為金屬插銷 28
4.1.5 在製程上移除W的過程 30
4.2 計算方式 30
4.2.1 基本運算 33
4.2.2 測試條件 33
4.2.3 軟體設定與應用 34
4.2.4 ISRM的訊號圖解說明 36
4.3 摩擦界面訊號與馬達電流(轉矩)訊號的比較 38
4.4 摩擦界面訊號在不同研磨墊的反應 42
4.4.1 硬質研磨墊 42
4.4.2 軟質研磨墊 43
4.5 Nitride-Oxide layer 頻譜 44
4.5.1 實驗Nitride-Oxide晶圓第一片的頻譜: 45
4.5.2 實驗Nitride-Oxide晶圓第二片的頻譜: 46
4.5.3 實驗Nitride-Oxide晶圓第三片的頻譜: 47
4.5.4 實驗Nitride-Oxide晶圓第四片的頻譜: 48
4.6 Metal layer 頻譜 49
4.6.1 實驗W Metal晶圓第一片的頻譜: 50
4.6.2 實驗W Metal晶圓第二片的頻譜: 51
4.6.3 實驗W Metal晶圓第三片的頻譜: 52
第五章 53
參考文獻 55
附錄一 58
自傳 61

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