臺灣博碩士論文加值系統

近年來半導體製程技術之演進相當快速，半導體元件的通道早已進入奈米的等級，這些元件的縮小確實能提高晶片的效能，但也衍生許多待克服的信號完整性與電磁相容等相關的問題。

本研究委託皇親科技製作ATmel 8bit microcontroller測試電路板，並委託聚興科技公司撰寫相關的驅動程式，以進行其電磁相容特性模擬量測與分析。藉著調整驅動程式所需的參數，可以改變測試電路板的時脈信號。本論文使用橫向電磁波室和近場探針來量測電路板產生的電磁頻率，並採用法國INSA學院所發展的IC-EMC軟體來進行模擬分析。因為硬體僅部分工作，量測結果與模擬結果雖有相似的趨勢但並不吻合，加上是本人碩士學程所被允許的最後一年，因此本論文僅個別提供模擬與量測結果，而不進行比較。

In recent years, semiconductor technology has been evolving very quickly. The channel lengths of semiconductor devices have been in the nanometer scale for a long time. The miniaturization of the semiconductor devices can indeed enhance the efficiency of an integrated circuit (IC). However, accompanying with the advances in IC technology are some important issues that remain to be coped with,such as signal integrity (SI) and electromagnetic compatibility (EMC).

During this study, I requested Huang-Chin Technology Inc. to fabricate Atmel 8-bit microcontroller test circuit boards for me and asked ATM Electronic Technology Inc. to write the relevant drivers for the microcontrollers in order to carry out EMC measurement. The clock signals generated by the test circuit board can be adjusted by changing the relevant parameters needed by the drivers. The signals radiated from the circuit board were measured using a transverse electromagnetic cell (TEM cell) and a near-field probe, and were simulated using an IC-EMC software tool developed by Institute National des Sciences Appliquees (INSA) in France. Since the fabricated hardware only functioned partially and since this is the last year (four years in total) allowed for my master program, measured and simulated results, which although had the same trend but seemingly did not agree with each other well enough, were separately presented without comparison.

中文摘...........................................i
英文摘要.........................................ii
誌謝.............................................iii
目錄.............................................iv
表目錄...........................................V
圖目錄...........................................Vi

一、簡介.........................................1
1.1 研究動機與目的..............................1
1.2 文獻回顧與初步探討..........................2
1.3 論文架構....................................4

二、 硬體電路架構說明............................5
2.1 ATmega32M1的基本介紹........................5
2.1.1 ATmega32M1方塊圖..........................6
2.1.2 ATmega32M1接腳圖..........................8
2.1 IC LAYOUT架構與說...........................9

三、模擬結果說明.................................11
3.1模擬步驟與說明...............................11
3.2積體電路電磁干擾模型的建立...................16
3.1.1 Ib雜訊電流之建立方法......................17
3.1.2被動元件的參數建立.........................19
3.1.3 ATmega32M1 AVR microcontroller等效電路模型估.......22
3.3 ATmega32M1微控制器模擬結果與說明.....................24

四、量測驗證結果說明.............................28
4.1 ATmega32M1PCB測試板介紹.....................28
4.2量測設備介紹.................................31
4.3硬體電路量測結果.............................33
4.4模擬與量測結果之比對.........................37

五、結論.........................................38

參考文獻.........................................39

[1] David A. Weston, “Electromagnetic Compatibility:Principle and Applications,Second Edition, Revised and Expanded”, CRC Press,2001
[2] IEC 62132-1(2006). Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz Part 1: General conditions and definitions.
[3] IEC 62132-2(2006). Integrated circuits - Measurement of electromagnetic Immunity, 150 kHz to 1 GHz Part 2: Measurement of Radiated Immunity - Tem-Cell and Wideband Tem-Cell Method.
[4] IEC 62132-3(2003). Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz Part 3: Bulk Current Injection (BCI), 10 kHz to 1 GHz.
[5] IEC 62132-4(2006). Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz Part 4: Direct RF power injection method.
[6] IEC 62132-5(2005). Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz Part 5: Workbench Faraday cage method.
[7] IEC 61967-1(2002). Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 1(2002): General conditions and definitions.
[8] IEC 61967-2(2005). Integrated circuits - Measurement of electromagnetic emissions,150 kHz to 1 GHz Part 2: Measurement of radiated emissions - TEM cell and wideband TEM cell method.
[9] IEC 61967-3(2003). Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 3: Measurement of radiated emissions - Surface scan method.
[10] IEC 61967-4(2006). Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 4: Measurement of conducted emissions - 1 Ω/150 Ω direct coupling method.
[11] IEC 61967-5(2003). Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 5: Measurement of conducted emissions - Workbench Faraday Cage method.
[12] IEC 61967-6. Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 6: Measurement of conducted emissions - Magnetic probe method.
[13] Sonia Ben Dhia, Mohamed Ramdani, and Etienne Sicard, 「ELECTROMAGNETIC COMPATIBILITY OF INTEGRATED CIRCUITS Chapter 4 Measurement Methods」, Springer Science+Business Media, Inc.
[14] ATmel ATmega32M1 AVR Microcontroller Datasheet(http://www.atmel.com/Images/8209S.pdf).
[15] 陳秋國,經濟部「晶片層級之電磁相容(IC-EMC)檢測」研習計畫報告(C09600133), 2006.
[16] 吳語庭,應用橫向電磁波室與電波暗室量測積體電路輻射放射之研究,雲林科技大學碩士論文,7月2007.
[17] IC EMC User's Manual Version 2.5 (http://www.ic-emc.org/)