臺灣博碩士論文加值系統

本實驗以 TaCl5 為起始物,分別與 Me3SiNHR(R=tBu,iPr,nPr)試劑反應,
合成出 (RN=)TaCl3Py2 之固體亞胺基鉭錯合物.之後以 LiNEt2與此錯合
物反應,得到液體之(RN=)Ta(NEt2)3 錯合物.我們以 (tBuN=) Ta(NEt2)3
為單源前驅物,經 CVD 法沉積 TaNxCyOz 之薄膜,並以 WDS, ESCA,AES,
SEM,TEM,AFM 及四點探針法求薄膜的電阻係數.反應所生成之氣體產物經
GC-MS 和 RGA 鑑定為 H2,CH4,H2C=CHCH3,(CH3)2C=CH2, CH3CN,EtN=
CHCH3,HNEt2.最後利用此 TaN 薄膜進行 Cu 與 Si 之擴散阻抗測試.並於
淺接面之 n+/p 及 p+/n diode 上先沉積 CVD-TaN 後再沉積 Cu ,經真空
退火 30 分鐘,測其漏電流值.

The imido complexes Ta(=NR)Cl3Py2 and Ta(=NR)(NEt2)3 (R=tBu,
iPr,nPr) were successful synthesized .Ta(=NBu)(NEt2)3 was used
as a single-source precursor to deposition thin films on Si,
SiO2/Si,in a low-pressure chemical vapor deposition reactor.De-
position experiments were carried out at 450℃-650℃ while the
precursor was vaporized at 40℃.The films were characterized by
SEM,WDS,AES,ESCA,TEM,AFM.Volatile products were indentified by
GC-MS and RGA.A layer of Cu was deposition on the TaN thin
films obtained in the experiment.Four-point probe method ,RBS,
SEM,TEM and SIMS studies all indicated that
interdiffusionetween the Cu atoms and the Si atoms of the
substrates effectively blocked to temperatures below 550℃ by
this layer of TaN