臺灣博碩士論文加值系統

本研究主要利用兩種方式製備矽奈米線陣列，一是直接將矽晶片浸泡於氫氟酸與硝酸銀的水溶液中，利用無電極金屬沉積法(electroless metal deposition, EMD)蝕刻出大面積的矽奈米線陣列，但溶液中的銀離子很容易聚集在一起，形成顆粒大小不均的銀顆粒，使得矽奈米線的線徑粗細不一；為改善矽奈米線的均勻性，本研究採取另一種方式製備矽奈米線，先藉由陽極氧化鋁(Anodic Aluminum Oxide, AAO)作為模板，覆蓋一層均勻的金奈米顆粒於矽晶片表面作為金屬催化劑，接著將試片浸泡於氫氟酸與過氧化氫溶液中進行蝕刻，以此方式可得到線徑較為一致的矽奈米線陣列。藉由可見光光譜儀分析其反射率，發現矽奈米線陣列具有良好的抗反射特性，且其反射率會隨著反應時間的增長而降低，表示較長的矽奈米線擁有較好的抗反射特性，適合用來製備太陽能電池。因此，本研究利用矽奈米線陣列製備太陽能電池，並量測其光電轉換效率及光譜響應的量測，發現較長的矽奈米線表面具有較多的缺陷，會加速載子的表面複合速率，使得效率降低。綜合抗反射性及表面缺陷兩項因素，可知唯有具備適當長度的矽奈米線太陽能電池才有較好的效率。

Large area SiNW arrays were successfully prepared by immersing a silicon wafer into an aqueous solution of AgNO3 and HF in an electroless metal deposition (EMD) process. However, in the process the Ag clusters easily aggregated, forming large Ag particles of various sizes, which in turn resulted in silicon wires with a large size distribution. To improve the uniformity of the SiNW arrays, uniform dispersed gold nanoparticles were used as the cathode instead, followed by the etching process using H2O2/HF solution. The growth conditions, morphologies and anti-reflection properties of SiNW arrays have been studied. Ultraviolet-visible spectroscopy analysis reveals that the SiNW has remarkable anti-reflection property, as compare with the plane silicon wafer. The reflectance of SiNW is found to decrease with increasing reaction time. The simple, inexpensive and easily scalable process to fabricate a large area silicon anti-reflection surface is a promising process for silicon-based solar cell. We used the synthesized SiNWs to fabricate solar cells. According to current-voltage curve and monochromatic incident photon-to-electron conversion efficiency(IPCE) analysis, we knew that there are many defects on the SiNW surface, which can act as recombination centers and enhance the surface recombination rate. Therefore, only the SiNW solar cell with appropriate length, which is enough to trap light but not too long for cause serious recombination, shows better performance than planer-Si solar cell.

目錄
摘要..........................................................................................................Ⅰ
Abstract....................................................................................................Ⅱ
誌謝..........................................................................................................Ⅲ
目錄.........................................................................................................Ⅴ
表目錄.....................................................................................................Ⅷ
圖目錄......................................................................................................Ⅹ
第一章 緒論..............................................................................................1
1.1概述..............................................................................................1
1.2研究動機......................................................................................3
第二章 文獻回顧......................................................................................5
　　2.1矽奈米線的發展..........................................................................5
2.2矽奈米線的製備方法..................................................................5
2.2.1無電極金屬沉積法(EMD) ...............................................6
2.2.2預積金屬後再進行氧化還原法.......................................7
2.2.3陽極氧化鋁板(AAO)為模板的電化學蝕刻....................7
2.3矽奈米線太陽能電池.................................................................13
2.4太陽能電池原理.........................................................................14
2.4.1基本原理.........................................................................15
2.4.2電路模型..........................................................................18
2.4.3各類型太陽能電池發展現況..........................................19
第三章 實驗步驟與研究方法................................................................32
　　3.1實驗設計流程.............................................................................32
3.2實驗設備.....................................................................................33
3.2.1實驗用氣體及藥品..........................................................33
3.2.2儀器介紹..........................................................................33
　　3.3實驗步驟.....................................................................................34
3.3.1實驗前處理......................................................................34
3.3.2無電極金屬沉積法蝕刻矽奈米線..................................35
3.3.3以陽極氧化鋁膜做模板配合電化學蝕刻矽奈米線......35
3.3.4太陽能電池元件製備......................................................36
　　3.4試片分析.....................................................................................38
3.4.1掃描式電子顯微鏡(SEM) ..............................................38
3.4.2紫外光／可見光吸收光譜儀..........................................38
3.4.3展部電阻量測..................................................................39
3.4.4電流－電壓特性曲線量測..............................................40
3.4.5 IPCE量測(Incident Photon Conversion Efficiency) ......40
第四章 結果與討論................................................................................51
　　4.1矽奈米線陣列之SEM分析及其結果.......................................51
4.2奈米線陣列之抗反射特性.........................................................55
4.3光電性質探討............................................................................56
4.3.1太陽能電池接面之形成..................................................56
4.3.2太陽能電池量測結果......................................................58
第五章 結論............................................................................................92
第六章 參考文獻....................................................................................93

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