臺灣博碩士論文加值系統

多晶矽太陽能電池可分為兩種，一種是在多晶矽晶圓基板上經蝕刻及擴散等程序製作p-n接面，另一種是在基板沉積上多晶矽薄膜的線路，後者可節省矽原料的成本。若以非矽基板(例如陶瓷基板)取代矽基板，可進一步降低生產成本。但陶瓷基板與矽間的熱膨脹係數(CTE)差異過大，故在兩者中間選擇適合玻璃當中間層(耐CVD溫度、粗糙度小、CTE介於矽和基板間)。以CaO-Al2O3-SiO2玻璃為主添加不同種元素來改善玻璃熱性質，匹配陶瓷基板。這篇選擇添加B2O3、GeO2、La2O3和Ba2O3來調整玻璃的熱特性。添加前三者對玻璃黏度而言會降低黏度；添加最後一個會提高玻璃的黏度。從玻璃熱膨脹性質來看，添加B2O3和Ba2O3會降低熱膨脹係數，而添加GeO2和La2O3會提高熱膨脹係數。

There are two kinds of making solar cell, one is that a polysilicate wafer makes p-n junctions by etching and diffusion methods, other is depositing lines of polysilicate thin film on a substrate, the latter could save cost of raw materials of silicate. If we use foreign substrates to substitute for polysilicate wafer substrates, the cost could save much more. But thermal expansion coefficient of ceramic substrates is much larger than silicate, so we chose a suitable glasses as a interlayer(enduring CVD temperature、 small roughness、 CTE between polysilicates and substrates). CaO-Al2O3-SiO2 glass as a main component add different elements to modify thermal behavior of glasses, matching the ceramic substrates.This thesis select B2O3、GeO2、La2O3 and Ba2O3 adding to glasses to modified the thermal behavior.Adding three front elements for glasses would decrease viscosity；Adding last element would increase viscosity. From the sigh of the thermal expansion behavior, adding B2O3 and Ba2O3 could decrease the coefficient of thermal expansion, and adding GeO2 and La2O3 could increase the coefficient of thermal expansion.

致謝iii
英文摘要iv
中文摘要v
目次vi
表目錄viii
圖目錄ix

第一章 前言1
第二章 文獻回故3
2.1 矽層的種類3
2.2 異質機板的種類3
2.3 矽太陽能的製造3
2.4 耐溫玻璃4
第三章 實驗流程6
3-1 玻璃成分設計6
3-2 起始鑄造玻璃的製程7
3-3 性質分析8
3-3-1 熱機械分析 (TMA)8
3-3-2黏度測量8
3-3-3玻璃粉末的製程9
3-3-4玻璃平坦層製備9
第四章 結果與討論13
4-1 CAB(SGx)7013
4-2 (CBy)20AS19
4-3 C(ALz)25S24
4-4 (CBag)20ALS29
4-5 其餘成分33
4-6 各成分的比較37
第五章 結論40
第六章 參考文獻42

[1] M.A. Green, Prog. Photovolt, 9, 123 (2001).
[2] M.A. Green, K. Emery, D.L. King, S.Igari Solar “cell efficiency tables (version 15). Progress in Photovoltaics,” Research and Applications 2000; 8: 187–196.
[3] M.A. Green, K. Emery, D.L. King, S.Igari “Solar cell efficiency tables (version 17). Progress in Photovoltaics,” Research and Applications 2001; 9: 49–56.
[4] M.A. Green, K. Emery, D.L. King, S. Igari, W. Warta “Solar cell efficiency tables (version 26). Progress in Photovoltaics,” Research and Applications 2005; 13: 387–392.
[5] J. Zhao, A. Wang, M.A. Green, F. Ferrazza “Novel 19.8% efficient ‘honeycomb’ textured multicrystalline and 24.4% monocrystalline silicon solar cells,” Applied Physics Letters 1998; 73: 1991–1993.
[6] J. Zhao, A. Wang, F. Yun, G. Zhang, D.M. Roche, S.R. Wenham, M.A. Green. “20,000 PERL silicon cells for the ‘1996World Solar Challenge’ solar car race,” Progress in Photovoltaics 1997; 5: 269–276.
[7] O. Shultz, S.W. Glunz, J.C. Goldschmidt, H. Lautenschlager, A. Leimenstoll, E. Scheiderlochner, G.P. Willeke. “Thermaloxidation processes for high-efficiency multicrystalline silicon solar cells,” 19th European Photovoltaic Solar Energy Conference, Paris, June, 2004.
[8] D.L. King, W.K. Schubert, T.D. Hund. “World’s first 15% efficiency multicrystalline silicon modules. Conference Record,” 1st World Conference on Photovoltaic Energy Conversion, Hawaii, December, 1994; 1660–1662.
[9] R.B. Bergmann , T.J. Rinke, , C. Berge, J. Schmidt, J.H. Werner,.“Advances in monocrystalline Si thin-film solar cells by layer transfer,” Technical Digest, PVSEC-12, June, 2001, Chefju Island, Korea; 11–15.
[10] M. Pauli, T. Reindl, W. KruK hler, F. Homberg, J. MuK ller, Sol. Energy Mater. Sol. Cells ,41/42 119 (1996).
[11] R. LuKdemann, S. Schaefer, C. SchuK le, C. Hebling, “Dry processing of mc-silicon thin-"lm solar cells on foreign substrates leading to 11% efficiency, “26th IEEE PV Specialists Conference, Anaheim, 159(1997).
[12] R.B. Bergmann, J. KoK hler, R. Dassow, C. Zaczek, J.H. Werner, Phys. Stat. Sol. ,166 ,(1998) 587.
[13] A. Breymesser, V. Plunger, M. Ramasori, V. Schlosser, M. Nelhiebel, P. Schattschneider, D. Peiro C. Voz, J. Bertomeau, J. Andreu, “Investigations of polycrystalline silicon Layers deposited by hot wire CVD,” 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna,1998.
[14] M. Sarret, T. Mohhammed-Brahim, R. Rogel, P. MuK nster, D. Guillet, F. le Bihan, O. “Bonnaud,Sub-atmospheric CVD as new high rate deposition technique of Silicon films on glass”, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 1998.
[15] R.L. Wallace, W.A. Amderson, K.M. Jones, Ahrenkiel, “Solution grown polysilicon for photovoltaic devices,” 25th Photovoltaic Solar Conference, Washington, 1996.
[16] N. Beldi, K. Kis-sion, D. Briand, T. Mohammed-Brahim, M. Sarret, F. le Bihan, O. Bonnaud, J.P. Kleider, C. Longeaud, A.R. Middya, J. Guillet, “Hot-wire hydrogen passivation of polycrystalline silicon films deposited by LPCVD,” 14th European Photovoltaic Solar Energy Conference, Barcelona, 1997.
[17] D. Angermeier, R. Monna, A. Slaoui, J.C. Muller, C.J. Tool, J.A. Roosmalen, S. Acosta, A. Ayral, “Analysis of silicon thin films on dissimilar substrates deposited by RTCVD for photovoltaic application,” 14th European PV Solar Energy Conference, Barcelona, 1452(1997).
[18] T. Repmann, B. Sehrbrock, C. Zahren, H. Siekmann, and B. Rech, “Microcrystalline Silicon Thin Film Solar Modules on Glass,” Solar Energy Mater. & Solar Cells, 90, 3047-53 (2006).The International Commercial Bank of China website, http://www.icbc.com.tw.
[19] A.W. Blakers, “Substrates for Thin Crystalline Silicon Solar Cells,” Solar Energy Mater. & Solar Cells, 51, 385-92 (1998).Taiwan Joint Credit Information Center website, http://www.jcic.org.tw.
[20] A. Slaoui, R. Monna, D. Angermeier, S. Bourdais, J.C. Muller, “Polycrystalline silicon films on foreign substrates by a rapid thermal-CVD technique,” 26th IEEE PV Specialists Conference, Anaheim, 627(1997).
[21] S. Bourdais, R. Monna, D. Angermeier, A. Slaoui, N. Rauf, A. Laugier, F. Mazel, Y. Jorand, G. Fantozzi, “Combination of RT-CVD and LPE for thin silicon-"lm formation on alumina substrates,” 2nd World Conference on PV Solar Energy Conversion, Vienna, 1774(1998).
[22] T. Takahashi, R. Shimokawa, Y. Matsumoto, K. Ishii, T. Sekigawa, Sol. Energy Mater. Sol. Cells ,48 ,327(1997).
[23] C. Hebling, S. Reber, K. Schmidt, R. LuK demann, F. Lutz, “Oriented recrystallisation of silicon layers for silicon thin-film solar cells,” 26th IEEE PV Specialists Conference, Anaheim, 623(1997).
[24] A. Slaoui, S. Bourdais, G. Beaucarne, J. Poortmans, and S. Reber, “Polycrystalline Silicon Solar Cells on Mullite Substrates,” Solar Energy Mater. & Solar Cells, 71, 245-252 (2002).
[25] J.R. Carruthers, G.E. Prterson, M. Grasso, P.M. Bridenbaugh, J. Appl. Phys. ,42,(1979) 1846
[26] Y. Zhang, Y.H. Xu, M.H. Li and Y.Q Zhao, J. Crystal Growth ,223, (2001) 537
[27] I. Foldvari, K. Polgar, R. Voszka, R.N. Balasanyan, Crsy. Res. Technol. ,19,(1984)1659
[28] G.I. Moalovichko, V.G. Grachev, E.P. Kokanyan, O.F. Schirmer, K. Betzler, B.Gather, F. Jermann, S. Klauer, U. Schlarb, M. Wohlecke, Appl. Phys. A, 56 ,(1993) 103
[29] D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano and L. J. Geerligs, “Transition-metal profiles in a multicrystalline silicon ingot,” J. Appl. Phys. 97, 033523 (2005).
[30] A.H. Mahan, A.C. Dillon, L.M. Gedvilas, D.L. Williamson, J.D. Perkins. Journal of Applied Physics, 94, 2360(2003).
[31] J.K. Holt, D.G. Goodwin, A.M. Gabor, F. Jaing, M. Stavola, H .Atwater. Thin Solid Films, 37,430(2003).
[32] F. Liu, S. Ward, L. Gedvilas, B. Keyes, Q. Wang, E. Sanchez, S. Wang , Journal of Applied Physics, 96, 2973(2004).
[33] J.D. Moschner, J. Schmidt, R. Hezel, Proceedings of the 19th Photovoltaic Solar energy Conference. Paris, 1082(2004).
[34] A. Masuda, H. Umemoto, H. Matsumura, Thin Solids Films, 501, 149(2006).
[35] D. E. Carlson and C. R. Wronski,” Amorphous silicon solar cell.” Appl. Phys., 28, 671 (1976)
[36] Paul S. Danielson, Willian H. Dumbaugh, Jr. and Hery E. Hagy, US Patent 4,255,198.
[37] W.A. James, H. William and Jr. Dumhaugh, US Pantent 4,180,618.(1989)
[38] P. S. Danielson, US Pantent 4,302,250
[39] B. G. Altken, US Pantent 7,323,426 B2 (2008)
[40] N.F. Borrelli, C.M. Smith,and D.C. Allan, “Excimer-laser-induced densification in binary silica glasses,” OPTICS LETTERS, 24 ,1401(1999).
[41] G. Adam and J. H. Gibbs, J. Chem. Phys., 43, 139 (1965).
[42] R. H. Doremus, “Viscosity,”Glass Science, Wiley-Interscience, 106 (1973).