臺灣博碩士論文加值系統

本研究合成一系列丙烯酸系與含三甲基矽單體之共聚合物,其實驗乃
是利用一般的自由基共聚合方法,將含三甲基矽單體與具鹼性可溶基(羧酸
基)之丙烯酸系單體在50-70 C下行共聚合反應以合成一系列之含矽共聚
物,並改變聚合條件以探討其影響,其次, 利用共聚物中的羧酸基與鄰位(
對位)硝基溴甲苯,在DBU存在下,於30 C之DMSO中行酯化反應。經由上述程
序合成之高分子,以紫外線光譜儀分析,在波長260~270nm左右有最大吸收,
此乃硝基苯之吸收。感光性高分子經高壓汞燈照射後,最大吸收減弱,以紅
外線光譜偵測之,發現在波長1530與1350cm-1處(硝基之吸收) 有減弱之現
象。利用照光反應前後之溶解度差異,可將此感光性高分子應用於光阻劑
範疇。使用ORIEL曝光系統(500W之Hg-Xe lamp ,波長220~260 nm)曝光,以
Na2CO3 0.06 wt％ 水溶液為顯影液,可獲得解析度1.0um之正型影像。

Three series of silicon containing copolymers werer synthesized
by the solution free-radical copolymerization with
azobisisobutyronitrile(AIBN) in 1,4-dioxane at 50-70 C. For
study on the effects of reaction temperature, feed ratio,
initiator concentration and solvent on the reaction of
copolymerization, various synthesis conditions were used to
prepare copolymers.Photopolymers were designed by esterification
of PASiMAA (PTSiMAA, or PTSiAA) with ortho-BMNB (para-BMNB)
using 1,8-diazabicyclo-[5,4,0]-7-undecene (DBU) as the base in
the aprotic solvent.All copolymers (PASiMAA, PTSiMAA and PTSiAA)
show good transparencies at wide range wavelengths of UV light,
but the photopolymers have maximum absorption at 260-270nm
resulting from the nitrobenzyl group.When the photopolymer films
were exposed to Deep-UV light, photoinduced internal oxidation-
reduction reaction cause the maximum absorption decreasing and
polymer films becoming base soluble resulting from the
generation of carboxylic acid group.It indicating that they
could be applied to positive acting, aqueous developable
resists. The resolution of the photoresists is about 1.0 um.