臺灣博碩士論文加值系統

本實驗研究著重在三個部分，分別是非晶矽錐狀&;#63756;米柱薄膜的製作、非晶矽錐狀&;#63756;米柱薄膜其光學與電學特性分析與氫電漿表面處理結合非晶矽錐狀&;#63756;米柱薄膜太陽電池元件分析與比較。
在這篇論文中，首先利用電漿輔助化學氣相(PECVD)沉積合乎文獻要求的本質非晶矽薄膜並利用塊狀共聚合物薄膜PS-b-PMMA形成均勻且大小適中的奈米球與良好品質的奈米金網，利用PS奈米球與奈米金網當做蝕刻遮罩製作於本質非晶矽薄膜上作奈米微影，並利用感應式耦合電漿離子乾蝕刻機製作非晶矽錐狀奈米柱薄膜結構,再利用電漿輔助化學氣相沉積機進行氫電漿表面處理，接者沉積N-type非晶矽薄膜，完成非晶矽錐狀奈米柱太陽能電池。
本研究探討在適當的上下電極功率、蝕刻時間、蝕刻氣體流量、蝕刻時反應腔室壓力與蝕刻輔助氣體氧氣流量下藉由品質良好的蝕刻遮罩輔助反應式偶合電漿乾式蝕刻製作出合適的本質非晶矽錐狀奈米柱薄膜結構。
接者，針對氫電漿表面處理進行實驗設計，討論氫電漿表面處理的製程壓力、電漿功率、氫電漿處理時間對元件特性的影響，並選擇適當的氫電漿表面處理製程條件，作為本質非晶矽錐狀奈米柱薄膜的氫電表面處理條件。
接著利用紫外光-可見光光譜分析儀探討在製作非晶矽錐狀奈米柱薄膜結構前後，薄膜中的薄膜光學吸收係數的變化並藉由分光轉換效率量測系統(IPCE)的輔助量測元件在各波長的光電轉換率，並利用I-V量測系統量測元件暗電流特性，探討經過氫電漿表面處理後元件的二極體特性變化，再由AM 1.5校正太陽光模擬器量測三種不同結構製程條件的太陽能電池元件的電性比較。

In this thesis,at first we utilize the method of forming neat PS nanoball lithograth to apply on a-Si glass substrate,and then fabricate a-Si nanorod by using ICP-RIE.Second,we apply hydrogen surface plasma on a-Si nanorod.And last,we utilize PECVD system deposit N-type a-Si thin film, to fabricate nanostructure silicon thin film solar cells.
My experiment result show that: in proper the hydrogen plasma power,processing time,pressure.We can get the optimal processing condition of hydrogen surface plasma.Using the optimal hydrogen surface plasma to deal with the a-Si nanorod which had discussed in proper the ICP power,RF power,etching pressure,etching gas flow,etching time.The nanostructure device can be improved by hydrogen surface plasma.
Then,we utilize the UV-VIS,and IPCE to disscuss the property of absorptive absorpticn of i nanorod or not,at the same time,we analyze the property of electric to the different type device which are PI/N , P/I nanorod/N , P/I nanorod/H2 plasma/N.

目錄
第一章 序論··················1
1.1 研究背景···················1
1.1.1 前言···················1
1.1.2 太陽電池產業發展···················2
1.1.3 非晶矽薄膜太陽能電池發展歷史···················6
1.1.4 奈米結構太陽能電池發展歷史···················6
1.2 研究動機···················8
1.2.1 非晶矽薄膜太陽能電池優勢···················8
1.2.2 錐狀矽奈米柱太陽電池優勢···················8
1.2.3 氫電漿表面處理對薄膜特性影響···················9
1.2.4 非晶矽奈米柱薄膜結合氫電漿處理之優勢·············9
第二章 實驗理論與文獻回顧···················11
2.1 太陽能電池原理···················11
2.1.1 矽太陽能電池光生載子流機制···················11
2.1.2 太陽能電池元件量測原理參數···················11
2.2 錐狀矽奈米柱製程技術介紹···················17
2.2.1 奈米球微影技術之應用···················17
2.2.2 金屬物質微影乾式蝕刻技術應用···················19
2.2.3 ICP-RIE電漿條件對蝕刻薄膜之影響··················22
2.2.4 矽奈米結構薄膜之光學及電性表現之研究·············33
2.2.5 氫電漿表面處理對元件及薄膜特性··················42
第三章 元件製作流程與實驗方法··················· 47
3.1 有機藥品與材料之製備···················47
3.2 非晶矽錐狀奈米柱薄膜元件製作流程：··················47
3.2.1 非晶矽錐狀奈米柱薄膜製作流程···················48
3.2.2 非晶矽奈米柱薄膜結合氫電漿處理元件製作流程·······55
3.3 實驗方法··················57
第四章 非晶矽錐狀奈米柱薄膜與氫電漿處理之元件研究·······58
4.1 PS-b-PMMA微影處理研究···················58
4.1.1 奈米球···················58
4.1.2 奈米金網···················59
4.2 蝕刻非晶矽錐狀奈米柱薄膜條件之研究·················59
4.2.1 蝕刻時間對錐狀矽奈米柱薄膜條件之影響·············60
4.2.2 ICP power對錐狀矽奈米柱薄膜條件之影響············62
4.2.3 Bias power對錐狀矽奈米柱薄膜條件之影響···········64
4.2.4 CF4流量對錐狀矽奈米柱薄膜條件之影響··············66
4.2.5 O2流量對錐狀矽奈米柱薄膜條件之影響···············68
4.2.6 製程壓力對錐狀矽奈米柱薄膜條件之影響·············69
4.3 氫電漿表面處理條件之實驗討論··················73
4.3.1 氫電漿製程壓力對元件電性討論···················73
4.3.2 氫電漿功率對元件電性討論···················75
4.3.3 氫電漿處理時間對元件電性討論··················78
4.3.4 氫電漿條件重複試驗···················80
4.4 氫電漿與奈米結構對元件效能影響···················84
4.4.1 奈米結構對元件光學電性之影響···················84
4.4.2 氫電漿對元件光學電性之影響···················88
4.4.3 理想氫電漿條件元件重複試驗統計·················92
4.4.4 氫電漿與奈米結構元件及不出腔體PIN元件光學電性比較··95
第五章 結論與未來展望···················97
5.1 結論···················97
5.2 未來展望···················98
參考文獻···················99

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