臺灣博碩士論文加值系統

本論文討論氮極性氮化鎵、非極性a平面氮化鎵成長在r平面的藍寶石基板上、與(11-22)半極性多量子井樣品的異向性質，此三類樣品皆由有機金屬氣相沉積法生長。樣品的光學的品質是利用光激螢光(PL)、時間解析光激螢光系統(TRPL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)和陰極發光系統(CL)來測量。首先，我們探討成長不同的低溫緩衝層時間(114、120和180秒)，對氮極性氮化鎵樣品的光學性質之影響。低溫緩衝層成長時間較長，光學品質會下降且會有較粗糙的表面。此外，我們也探討光致螢光光譜之波峰位置不同與應力有關。
第二，探討非極性a平面氮化鎵成長於r平面的藍寶石基板上，在不同厚度的第一步a平面氮化鎵條件下的樣品，對於非極性a平面氮化鎵樣品，在陰極發光光譜中，主要發光位置在波長365奈米，這與部分差排終止於堆疊差排有關，且在光激螢光光譜中，有兩個主要的發光波峰在波長355和363奈米，分別是來自於近能帶發光和堆疊差排。
第三，對於(11-22)半極性多量子井氮化銦鎵/氮化鎵樣品，在光激螢光光譜中，會有一個主要的波峰在波長403奈米左右來自於氮化銦鎵，其它微弱的發光波峰則是屬於氮化鎵的訊號。樣品有較強的陰極發光時，會觀察到表面有較大條紋且粗糙的表面形貌。

This thesis studies the anisotropic properties of N-polar GaN, nonpolar a-plane GaN, and (11-22) semipolar InGaN/GaN MQW samples grown by MOVCD. The optical and material properties were investigated by photoluminescence (PL), and time-resolved PL measurements, atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), and cathodoluminescence (CL). First, for N-polar GaN samples, we study the effects of the buffer layer growth times on the material and optical properties of three N-polar GaN samples with different growth times (114, 120, and 180 seconds) of low temperature (LT) buffer layer. As the growth time of the low temperature buffer increases, the PL and CL intensities decrease, due to a rougher surface morphology. Also, the stress is associated with PL peak position by Raman scattering.
Second, we study nonpolar a-plane GaN on r-sapphire with the different thickness first-step a-GaN. For nonpolar a-plane GaN samples, the main peak (~365 nm) in the CL spectrum is associated with the partial dislocation terminating basal stacking faults (BSFs) and two main peaks around ~355 nm and ~363 nm in PL the spectrum are attributed to near-band-edge (NBE) emission and BSFs, respectively.
Third, for (11-22) semipolar InGaN/GaN MQW samples, the main peak around ~403 nm is the InGaN-related emission, while the other weak peaks are the GaN-related emission in the PL Spectrum. As the sample has the stronger CL luminescence, the striation feature with a rougher surface morphology can be observed.

中文摘要………………………………………………….……………………I
Abstract………………………………………………….…………………….III
Contents…………………………………………………………………………V
Table Captions………………………………………………..……………….IX
Figure Captions………………………………………………………….…….. X
Chapter 1 Introductions of N-polar GaN, Non-polar a-plane GaN, and Semi-polar (11-22) InGaN/GaN Multiple Quantum Wells (MQWs)…1
1.1 Introduction of III-V Semiconductors…………………………………………………...1
1.2 Luminescence of Semiconductors……………………………..............…………………..2
1.3 Polarization of Wurzite GaN……………………………………..…………..................4
1.4 Strain…………………………………….....................................................................5
1.5 Introductions of N-polar GaN…………………………………………….……………6
1.6 Introductions of Non-polar a-plane GaN……………….…………..…………..9
1.7 Introductions of Semi-polar (11-22) InGaN/GaN Multiple Quantum Wells (MQWs)..…10
Reference……………………………………………………………………………………..13

Chapter 2 The Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN……………………………………27
2.1 Introduction of N-polar GaN…………………………..…………………………………27
2.2 Motivation and Investigation Flow Chart……………..………………………………30
2.3 Sample Structures and Growth Conditions……………….…………………………...31
2.4 Scanning Electron Microscopy (SEM) and Cathodoluminescence (CL) Studies of N-polar GaN……………………………………....……………………………………….………….32
2.5 Atomic Force Microscopy (AFM) Measurement……………………………….………33
2.6 Temperature-dependent Photoluminescence (PL) Studies of N-polar GaN……………33
2.7 Estimation of Strain by Raman Scattering Measurement………………………………35
2.8 Summary…………………………………………………………….……….…………..37
Reference……………………………………………………………………………………38

Chapter 3 Anisotropic Characteristics of a-plane GaN on r-sapphire and Semipolar (11-22) InGaN/GaN Multiple Quantum Wells…………………57
3.1 Introduction of a-plane GaN on r-sapphire and (11-22) Semipolar InGaN/GaN Multiple Quantum Wells…………………………………………………………………………57
3.2 Motivation and Investigation Flow Chart of a-plane GaN on r-sapphire and (11-22) Semipolar InGaN/GaN Multiple Quantum Wells………………………………………60
3.3 Sample Structures and Growth Conditions of a-plane GaN on r-sapphire and (11-22) Semipolar InGaN/GaN Multiple Quantum Wells……………………………………....61
3.4 Scanning Electron Microscope (SEM) and Cathodoluminescence (CL) Studies of a-plane GaN on r-sapphire……………………………………...……………………………….62
3.5 Atomic Force Microscopy (AFM) Measurement of a-plane GaN on r-sapphire……….64
3.6 Polarization- and Temperature-dependent Photoluminescence (PL) Studies of a-plane GaN on r-sapphire………………………………………………………………………65
3.6.1 Temperature-dependent PL Study………………………………..……………….65
3.6.2 Low-temperature PL and Degree of Polarization………………………………66
3.6.3 Temperature-dependent Polarized PL Study……………………………………66
3.7 Scanning Electron Microscope (SEM) and Cathodoluminescence (CL) Studies of Semi-polar (11-22) InGaN/GaN MQWs…………………………..…………………..67
3.8 AFM Study of Semi-polar (11-22) InGaN/GaN MQWs…………………………….68
3.9 Polarization- and Temperature-dependent Photoluminescence (PL) Studies of Semi-polar (11-22) InGaN/GaN MQWs…………………………………………………...………69
3.9.1 Low-temperature Polarized PL and Degree of Polarization…….………………..69
3.9.2 Temperature-dependent PL Study………………………………………………69
3.9.3 Temperature-dependent Polarized PL Study……………………………………...70
3.10 Polarization- and Temperature-dependent TRPL of Semi-polar (11-22) InGaN/GaN MQWs…………………………………………………................................................70
3.10.1 Low-temperature (10K) TRPL Study………………………………………….70
3.10.2 Low-temperature Polarized TRPL Study………………………………….…….71
3.10.3 Temperature-dependent Polarized TRPL Study…………………........................71
3.11 Summary………………………………………………………………………...………72
Reference…………………………………………………………………….........................73
Chapter 4 Conclusions……………………………………………………..109

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