臺灣博碩士論文加值系統

本論文主要研究為使用熱燈絲化學氣相沉積製備碳化矽薄膜表面批覆於氮化鋁基板探討其微波特性，目前陶瓷基板已成為和互連技術的基礎材料，常見的陶瓷材料有氮化鋁、氧化鋁、碳化矽和氧化鈹，由於氮化鋁晶格常數 (a = 3.186 Å, c = 5.186 Å) 與碳化矽晶格常數(4.3596Å) 晶格匹配度為18%，相當匹配，所以選用碳化矽薄膜表面披覆於氮化鋁基板並探討其微波特性。
本論文首先以熱燈絲化學氣相沉積，調整甲烷流量及基板溫度下製備碳化矽薄膜，研究首先探討基板溫度與甲烷流量對於碳化矽形成之影響，使用場發式電子顯微鏡與原子力顯微鏡觀察薄膜沉積效果，並利用拉曼光譜儀分析其晶體結構，最後X光繞射儀分析其平均晶粒尺寸和晶向結構，發現隨著甲烷流量以及基板溫度增加，平均晶粒尺寸上升。
接著論文中探討以共面波導傳輸線(Coplanar waveguide transmission line，CPWTL)進行微波參數分析，利用S參數轉換平均乘載功率(Average power handling capability，APHC)、衰減損失(Attenuation loss)、和介電常數(Dielectric constant) ，在10 GHz時，基板溫度350 °C，甲烷流量2 sccm時，會造成最大的衰減常數(0.2 dB/mm); 以及基板溫度50°C，甲烷流量2 sccm時，可以得到最大的介電常數(9.9)，最後透過平均乘載功率的分析，發現透過這樣簡單的製程，可以改變基板本身介電常數及衰減常數，又可以讓平均乘載能力未造成極大的損失。

In this study, main surface passivation on aluminum nitride substrate prepared by hot-wire chemical vapor deposition and microwave properties with discussed in this thesis. At present, the ceramic substrate has become the material of high power components. Commonly used ceramic substrates are aluminum nitride, alumina, silicon carbide and beryllium oxide. The lattice matching degree of aluminum nitride lattice constant (a = 3.186 Å, c = 5.186 Å) and silicon carbide lattice constant (4.3596Å) was 18%. So the use of silicon carbide film passivation of aluminum nitride substrate and explore its microwave properties.
This study is using HWCVD to deposit SiC film. First, we discuss on the effect of CH4 rate and substrate temperature on the deposition result by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). Next, analysis, crystal structure, crystal phase, and average grain size by Raman spectrometer and X-ray diffraction. That as the methane flow rate and the substrate temperature increase, the average grain size increases.
Next, the microwave parameter analysis by using Coplanar waveguide transmission line (CPWTL) and convert S-parameter to average power handling capability, attenuation loss, and dielectric constant. Discussed on microwave characteristics of different process parameters. At 10 GHz, the substrate temperature of 350 °C and the methane flow rate of 2 sccm results in the maximum attenuation constant (0.2 dB / mm), and the substrate temperature 50 °C, the methane flow rate of 2 sccm, you can get the maximum dielectric constant (9.9). Finally, through the analysis of the average power handling capability, found through such a simple process. We can change the dielectric constant and attenuation constant of the substrate itself, and the average load capacity does not cause significant loss.

中文摘要 i
Abstract iii
Acknowledgements v
List of Publications vii
Contents viii
Table Contents xi
Figure Contents xii
Chapter 1 Introduction 1
1.1 Research Background 1
1.1.1 Introduction of ceramic substrate 1
1.1.2 Introduction of aluminum nitride 2
1.1.3 Introduction of coplanar waveguide 3
1.1.4 Introduction to skin effect 4
1.2 Theoretical Basis of Silicon Carbide 5
1.2.1 Crystal structure 5
1.2.2 Physical properties of SiC 7
1.2.3 Occurrence and stability of SiC polytypes 8
1.2.4 Introduction to 3C-SiC 9
Chapter 2 Theoretical Basis and Literature Review 10
2.1 Review of Chemical Vapor Deposition 10
2.1.1 Chemical vapor deposition reaction principle 10
2.1.2 Reaction gas system 11
2.1.3 Introduction to hot-wire chemical vapor deposition 12
2.2 Experimental process and analytical equipment 13
2.2.1 Hot-wire chemical vapor deposition 13
2.2.2 Direct current Sputtering 14
2.2.3 On wafer RFIC Measurement 15
2.2.4 Field Emission Scanning Electron Microscope 16
2.2.5 Raman Spectrometer 17
2.2.6 X-ray diffraction 18
2.2.7 Atomic Force Microscopy 21
Chapter 3 Experimental Materials and Process Steps 23
3.1 Experimental Materials 23
3.1.1 Metallic catalyst material 23
3.1.2 Process gas 24
3.2 Experiment process 26
3.2.1 Experimental parameters 26
3.2.2 Design of thickness of CPW transmission line 27
Chapter 4 Experimental results and discussion 30
4.1 Experiment process 30
4.1.1 Adjustment of CH4 flow and substrate temperature for FE-SEM analysis. 30
4.1.2 Adjustment of CH4 flow and substrate temperature for AFM analysis. 39
4.1.3 Adjustment of CH4 flow and substrate temperature for Raman analysis 43
4.1.4 Adjustment of CH4 flow and substrate temperature for XRD analysis 48
4.2 Measurement Attenuation Loss, Dielectric constant, and APHC with varying CH4 flow rate and substrate temperature. 53
4.2.1 Calculated attenuation loss 53
4.2.2 Calculated dielectric constant 58
4.2.3 Calculated average power handling capability 63
Chapter 5 Conclusions 69
Reference 70

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