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研究生:蕭煜丞
研究生(外文):HSIAO, YU-CHEN
論文名稱:開發新穎可交聯n型摻雜陰極界面修飾層並應用於高效率長壽命鈣鈦礦太陽能電池
論文名稱(外文):Highly-Efficient and Long-Term Stable Perovskite Solar Cells with a Novel Cross-Linkable N-Doped Hybrid Cathode Interfacial Layer
指導教授:張志宇張志宇引用關係
指導教授(外文):CHANG, CHIH-YU
口試委員:王致傑林巧奇
口試日期:2018-06-13
學位類別:碩士
校院名稱:逢甲大學
系所名稱:材料科學與工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2018
畢業學年度:106
語文別:中文
論文頁數:75
中文關鍵詞:鈣鈦礦太陽能電池性能穩定度界面摻雜
外文關鍵詞:perovskite solar cellsperformancestabilityinterfacedoping
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有機-無機鹵化鈣鈦礦太陽能電池具備低溫溶液態製程、高光電轉換效率、可撓曲等多重優勢,在近期備受關注。欲成功實現高效率、高穩定度元件,界面修飾技術之開發至關重要。傳統元件多採用高反應性的低功函數金屬做為陰極材料,因此普遍面臨元件快速劣化與金屬原子擴散等關鍵議題。在本研究中,研究將聚焦於介紹新穎n型摻雜富勒烯衍生物N,N-dimethyl-N-octadecyl(3-aminopropyl) trimethoxysilyl chloride silane(DMOAP)摻雜[6,6]-phenyl-C61-butyric acid methyl ester(PC61BM)界面修飾層材料的開發,搭配高功函數的金屬銀做為陰極,成功提升鈣鈦礦太陽能電池之元件效率、穩定度以及大面積製程實用性。有別於現已開發之n型摻雜劑大多面臨大氣穩定度不佳或受限於真空製程等關鍵議題,本研究選用帶有鹵素陰離子的四級銨鹽分子材料做為摻雜劑。研究結果顯示,此分子材料可成功扮演摻雜劑的角色,其結構上的鹵素陰離子(Cl-)可透過陰離子誘導電子轉移至PC61BM,大幅提升薄膜導電度兩個數量級以上。不僅如此,銨陽離子可於PC61BM/Ag界面形成良好的偶極矩,有效修飾銀電極之功函數,達到良好載子收集效果與穩定度。這些特性使得n型摻雜PC61BM可同時扮演電子傳輸層與陰極界面修飾層的角色,大幅簡化製程的繁複性。更重要的是,此摻雜劑有助於提升PC61BM於鈣鈦礦表面之覆蓋性,形成良好的異質接面,提升光電流的輸出。綜合以上優良的性能,所得到的元件具有18.06%的顯著的光電轉換效率(power conversion efficiency, PCE),大幅優於無摻雜的PC61BM(PCE = 4.34%)和氧化鋅奈米粒子(nanoparticles,NPs)界面層(PCE = 10.40%)。另一方面,此分子材料中具有可交聯基團,可有效抑制鈣鈦礦層中碘離子(I-)擴散所導致的不良界面反應,大幅增進元件之長期穩定度。研究中整合界面修飾技術與原子層沉積Al2O3封裝薄膜,藉以檢驗元件的長期穩定度。所製備的元件在大氣下放置5700個小時後光電轉換效率的損耗是可忽略不計的(<5%)。為目前鈣鈦礦太陽能電池環境穩定度之最優秀的紀錄。這些研究結果明確顯示界面工程技術於高效率長壽命鈣鈦礦太陽能電池之重要性。
Hybrid organic−inorganic halide perovskite solar cells (PeSCs) are currently at the forefront of emerging photovoltaic technologies due to their potential for providing cost-effective highly efficient solar energy conversion. The interfacial layers play an important role in determining the efficiency and stability of PeSCs. In this work, a solution-processed cross-linkable hybrid composite film composed of N,Ndimethyl-N-octadecyl(3-aminopropyl)-trimethoxysilyl chloride silane (DMOAP)-doped [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) is demonstrated as an effective cathode interfacial layer for PeSCs. The hydrolyzable alkoxysilane groups on DMOAP enable moisture cross-linking through the formation of stable siloxane bonds, which is effective in ensuring uniform film coverage of PC61BM on the perovskite layer and preventing the undesirable reaction between the mobile halide ions and Ag electrode. On the other hand, the quaternary ammonium cations on DMOAP can induce the formation of favorable interfacial dipoles, allowing the high work-function Ag layer to act as the cathode. Importantly, our results show that the chloride anions (Cl-) on DMOAP can cause efficient n-doping of PC61BM via anioninduced electron transfer, increasing the conductivity of PC61BM film by more than 2 orders of magnitude. With these desired properties, the resulting devices show a remarkable power conversion efficiency (PCE) of 18.06%, which is superior to those of the devices with undoped PC61BM film (PCE = 4.34%) and a state-of-the-art ZnO nanoparticles (NPs) interfacial layer (PCE = 10.40%). More encouragingly, combining this interfacial layer with an effective thin-film encapsulation layer, the resulting devices exhibit promising long-term ambient stability, with negligible (<5%) loss in PCE after more than 5700 h of aging. To the best of our knowledge, the device stability obtained in this study is one of the best results for PeSCs.
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 5
第二章 文獻回顧 6
2.1 太陽能電池發展歷史 6
2.2.1 第一代太陽能電池 7
2.2.2 第二代太陽能電池 7
2.2.3 第三代太陽能電池 8
2.3 鈣鈦礦太陽能電池簡介 9
2.3.1 鈣鈦礦結構與光電特性 9
2.3.2 鈣鈦礦太陽能電池發展 11
2.3.3 鈣鈦礦太陽能電池工作機制 14
2.4 陰極界面修飾層 15
2.5 封裝阻氣層 20
2.6 太陽能電池之性能分析 23
2.6.1 串聯電阻(Series Resistance, Rs)與並聯電阻(Shunt Resistance, Rsh) 23
2.6.2 開路電壓(open circuit voltage, Voc) 24
2.6.3 短路電流(short circuit current, Isc) 24
2.6.4 填充因子(Fill Factor, FF) 25
2.6.5 能量轉換效率 (Power Conversion Efficiency, PCE) 26
第三章 實驗步驟與分析 27
3.1 實驗設計 27
3.2 元件製備 27
3.2.1 材料準備 27
3.2.2 基板清洗流程 28
3.2.3 氧化鋅奈米粒子(ZnO NPs)合成 28
3.2.4 封裝阻氣層 28
3.2.4 元件製備流程 29
3.2.5 太陽能元件分析與量測 30
第四章 結果與討論 32
4.1 鈣鈦礦主動層相關分析 32
4.2 DMOAP-DOPED PC61BM薄膜特性分析 33
4.2.1 DMOAP-doped PC61BM導電度分析 33
4.2.2 DMOAP-doped PC61BM薄膜穩定度 34
4.2.3 DMOAP-doped PC61BM表面形貌分析 36
4.2.4 DMOAP-doped PC61BM陰極界面修飾特性 37
4.3 鈣鈦礦太陽能電池元件特性分析 40
4.3.1 DMOAP-doped PC61BM對鈣鈦礦太陽能電池效率的影響 40
4.3.2 DMOAP-doped PC61BM於不同鈣鈦礦太陽能系統的泛用性 44
4.4元件穩定度測試 48
第五章 結論 53
參考文獻 53
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