臺灣博碩士論文加值系統

以傳統標準的互補式金氧半(CMOS)與雙極性互補式金氧半(BiCMOS)製程技
術製造複晶矽薄膜電晶體,元件的特性及電性參數已被完整的觀察並研究,
包括小尺寸效應和漏電流現象在內.同時被閘極電壓控制的載子移動率亦
將探討之.這種與CMOS/BiCMOS製程相容的複晶矽薄膜電晶體可應用在縮小
電路面積成為非常重要考量的情況,因為它可以實現三度空間的電路集積.
基本的理念在於如果薄膜電晶體可在任何製程被製造,則它的應用價值會
大大提高.另外,它的光敏感性很顯著,光電流與閘極電壓,汲極電壓,與通
道參雜濃度的相關性皆被研究,其牽涉到的物理機制也已闡明.這種對光敏
感的現象可被應用在光感測器或光激發元件的設計上,而且可集積在晶片
上.

In this thesis, the poly-Si TFTs devices are fabricated by
conventional standard CMOS and BiCMOS processes. The char-
acteristics and electrical parameters of the devices have been
obsreved and studied, including small dimension effect and off-
current behavior. And the gate-controlled mobility is also
characterized and explained. These CMOS/BiCMOS com- patible
poly-Si TFTs can be used in the situation where chip area
reduction of circuits is a very important concern, be- cause of
its ability of three-dimensional integration. The basic
application idea is that if the TFTs can be realized by any
process, it will become more applicable in more situ- ation. It
has also been shown that the photosensitivity of the poly- TFTs
is significant. The dependences of the photocurrent on gate
voltage, drain voltage and channel doping are studied, and the
physical mechanisms are given.The excellent photosen- sitivity
may be applied to the design of light sensor or light trigger
elements and integrated on CMOS/BiCMOS chip.