臺灣博碩士論文加值系統

本實驗目的為研究晶圓直接接合製程裡物理或化學鍵結機制，尋找適當之製程參數，以期能在微機電系統與積體電路系統中使用。並針對晶圓直接接技術製作矽晶圓-矽晶圓之接合，探討含水與不含水之黏著，晶圓表面OH-基的多少，與鍵結機械強度的相關性等，並探索在絕緣層上黏著時化學鍵結與物理鍵結的機制。
本實驗執行可達下列成果：
1. 建立拉伸式斷裂強度實驗，在絕緣層上矽晶圓以晶片黏著法施工後，鍵結強度評估方法。
2. 建立紅外線吸收光譜實驗對預鍵結或鍵結後絕緣層上矽晶圓化學鍵種類之鑒別。
3. 直接接合界面之截面蝕刻後，金相之討論。
4. 三點彎曲機械實驗在晶圓以直接接合製程後，實驗結果之討論。

論文摘要………………………………………………………………Ⅰ
目錄……………………………………………………………………Ⅱ
表目錄…………………………………………………………………Ⅴ
圖目錄…………………………………………………………………Ⅵ
第一章 前言…………………………………………………………01
第二章 文獻回顧……………………………………………………03
2-1. WDB之簡介與機制……………………………………………03
2-2. WDB之應用……………………………………………………03
2-2-1. 積體電路（IC）上的應用 ……………………………03
2-2-2. 微機電（MEMS）上的應用 ……………………………06
2-2-3. 異質接合上的應用 ……………………………………07
2-2-4. 其他方面的應用-保護表面……………………………08
2-3. Si-Si鍵結的歷史回顧………………………………………08
2-4. Si-Si鍵結之分類 — HL, HB........................10
2-4-1. 親水性鍵結 ……………………………………………10
2-4-2. 斥水性鍵結 ……………………………………………11
第三章 實驗程序……………………………………………………20
3-1. 晶圓清洗（Wafer Cleaning）步驟……………………………20
3-2. 接合（contacting）步驟………………………………………22
3-3. 退火（annealing）步驟…………………………………………23
3-4. 實驗方法與儀器介紹 …………………………………………23
3-4-1. 接觸角量測（Contact Angle Measurement）…………23
3-4-2. 陽極接合機（Anodic Bonder）…………………………23
3-4-3. 紅外線照相術（IR photography）………………………24
3-4-4. 傅立葉轉換紅外線光譜（FTIR）…………………………25
3-4-5. 拉伸試驗（Tensile test）………………………………28
3-4-6. 三點彎曲試驗（3-point bending test）………………29
3-4-7. 截面OM、SEM觀測 (Cross Section observation)……31
3-4-8. 液氮冷處理製程 (Cryogenic Process) ………………32
第四章 結果與討論 …………………………………………………41
4-1. 紅外線照相術（IR photography）………………………………41
4-2. 接觸角量測（Contact angle Measurement）…………………42
4-3. 傅立葉轉換紅外線光譜（FTIR）…………………………………43
4-4. 截面觀察（Cross-Section Observation）……………………48
4-5. 拉伸試驗（Tensile test） ……………………………………51
4-6. 三點彎曲測試（3-point bending test）……………………53
4-7. 液氮冷處理製程 (Cryogenic Process) ……………………54
第五章 結論…………………………………………………………87
參考文獻………………………………………………………………89

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