臺灣博碩士論文加值系統

氧化鋅是一種壓電材料，受到應力作用時會產生電壓輸出。本論文嘗試以氧化鋅奈米柱陣列作為壓力感測器，我們在矽基板上以水熱法不同時間成長氧化鋅奈米柱，我們藉由手指來對氧化鋅奈米柱陣列施加應力並且探討於不同時間成長氧化鋅奈米柱與退火的條件對電壓的影響，此外，我們還探討了探針位置與手指施壓位置的不同而產生的電壓變化。

實驗結果顯示，當探針距離相隔越遠所量測的電壓越大，手指的施壓的位置離探針越遠所量測出來的電壓越小，而電壓的極性也會因為退火而相反，而本論文在最後嘗試從相關文獻中以現有理論去解釋觀測到的現象。

ZnO is one of the piezoelectric materials in which a voltage can be generated when a mechanical forces is applied. In this work, attempt was made to find out the feasibility of using ZnO nanorods as a pressure sensor. The ZnO nanorods used in this work were grown by hydrothermal method on Si substrate. Mechanical force applied to the ZnO nanorods array was achieved by pressing the nanorods with human fingers .Piezoelectric effect of ZnO nanorods prepared with different growth times and post-growth annealings was studied. We also investigated the effect of the distance between probes as well as the fingers’ position with respect to the probe.

Our experimental results show that more voltage was generated when the distance between probes is farther separated, while the generated voltage becomes smaller as the fingers’ position was placed farther from the probe, Interestingly, the polarity of the generated voltage reverse when the ZnO nanorods were subjected to post-growth annealing. In this thesis, the experimental results observed were explained by the existing theory.

目次

誌謝 I
摘要 II
Abstract III
目次 IV
圖次 VI
表次 VIII
第一章 緒論 1
1-1研究背景 1
1-2文獻回顧 1
1-3 研究動機 2
1-4 論文架構 3
第二章 材料簡介與理論 9
2-1 材料簡介 9
2-1-1 奈米材料 9
2-1-2 氧化鋅基本性質與特性 9
2-1-3 氧化鋅的導電性質 10
2-1-4 氧化鋅的成長方法 10
2-2 壓電理論 12
2-2-1 正壓電效應 12
2-2-2 負壓電效應 12
第三章 實驗流程 17
3-1 樣品製備 17
3-1-1 基板清洗程序 17
3-1-2 HfO2介電層沉積 18
3-1-3 沉積後退火(PDA) 18
3-1-4 氧化鋅種晶層之沉積 18
3-1-5 水熱法合成氧化鋅奈米柱 18
3-1-6 氧化鋅奈米柱後成長退火(post-growth anneal) 19
3-2 電壓量測 19
3-2-1 探針於樣品左邊 19
3-2-2 探針於樣品中間 20
第四章 結果與討論 29
4-1 特性分析 29
4-2 電性量測 29
4-2-1 探針置於樣品左側 30
4-2-2 探針置於樣品中間 31
第五章 結論與未來展望 42
5-1 結論 42
5-2未來展望 43
參考文獻 44



圖次
圖1-1(a)鎢探針與氧化鋅奈米線之低倍率SEM圖(b)氧化鋅奈米線之高倍率SEM圖(c)氧化鋅奈米線之TEM圖[3] 4
圖1-2 (a-e)氧化鋅奈米線五種彎折狀態之SEM圖(f)氧化鋅奈米線不同彎折狀態之電流-電壓曲線圖[3] 5
圖1-3(a)氧化鋅應力感測器元件示意圖(b)顯微鏡下的元件影像(c)量測系統示意圖[4] 6
圖1-4不同應力下之電流-電壓曲線圖[4] 7
圖1-5不同應力下之電流圖[5] 8
圖2-1 (a)零維(b)一維(c)二維結構示意圖 13
圖2-2氧化鋅晶體結構圖[6] 14
圖2-3正壓電效應示意圖 15
圖2-4負壓電效應示意圖 16
圖3-1樣品製備流程圖 21
圖3-2水熱法成長氧化鋅示意圖 22
圖3-3 負極探針在右與施壓位置示意圖 23
圖3-4正極探針在右與施壓位置示意圖 24
圖3-5 負極探針在右與施壓位置示意圖 25
圖3-6 正極探針在右與施壓位置示意圖 26
圖4-1不同時間成長氧化鋅奈米柱(a)2小時(b)4小時(c)6小時(d)8小時 33
圖4-2氧化鋅纖鋅礦結構之原子模型[15] 34
圖4-3氧化鋅奈米柱壓電電位分布示意圖[16] 34
圖4-4 氧化鋅奈米柱拉伸與壓縮電位分布示意圖 35
圖4-5 負極探針旁施壓 36
圖4-6正極探針旁施壓 36
圖4-7 應力產生電壓源傳送電流示意圖 37
圖4-8 負極探針旁施壓 38
圖4-9 正極探針旁施壓 38
圖4-10負極探針旁施壓 39
圖4-11正極探針旁施壓 39
圖4-12退火後負極探針旁施壓 40
圖4-13 退火後正極探針旁施壓 40
圖4-14退火後負極探針旁施壓 41
圖4-15退火後正極探針旁施壓 41


表次
表3-1 HfO2 ALD成長參數 27
表3-2 ZnO種晶層ALD成長參數 28

參考文獻

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