臺灣博碩士論文加值系統

射頻微機電系統日益受到重視，本論文提出工作頻率30GHz微波衰減器之電路設計、材料探討、電路模擬與微機電微波機械開關之製程整合，並完成微波衰減器之製作與金屬接觸式微波開關之部份製作。
傳統上高頻微波電路以砷化鎵為主要材料，本論文中採用高阻值之矽晶圓與電鍍1μm厚之鎳為傳輸線材料。在傳輸線的選擇上,配合微加工技術採用共平面波導，以得到更好的微波特性。在微波電路模擬上合併使用Microwave Office及Ansoft HFSS兩套軟體。以前者印證微波理論而後者則用來驗證實際尺寸之適用與否。提出以CMOS標準製程為材料之微波衰減器電路設計與後製程之規劃。而在微波開關方面則選用金屬接觸式微波開關，其製程較電容耦合式開關複雜。
在製程方面，完成了微波電路之製程及部份之微機械開關製程。除就多層結構之材料選擇上進行探討，並比較相關製程方式之優劣及整合。提出製程所需注意之事項及相關之製程參數。

This thesis proposes a microwave attenuator at 30GHz. The circuit design, material selection, and simulating of the attenuator are discussed, as well as the compatible process of microwave MEMS mechanical switch. This work completes the implementation of the attenuator, and that of the metal contact-serial switch is partially done.
Unlike conventional high-frequency microwave circuit that takes GaAS as the main transmission line material, this thesis uses high-resistivity silicon wafer and Ni with 1μm in thickness by electrode. To obtain better microwave characteristics, coplan waveguide is adopted with micromachined techniques. Two sets of software, Microwave Office and Ansoft HFSS, are used for simulation, where the former is for the verification of the microwave theory and the latter is for checking the practicability of the scale. In addition, the design of CMOS compatible microwave attenuator and its post-process are proposed. Regarding microwave switch, the metal contact-serial switch is chosen although its process is more complicated than that of tunable capacitance switch.
As for the process, that of microwave circuit is completed while that of micro mechanical switch is partially done. Furthermore, this thesis discusses about the material selection of multiple-layered structure. The pros and cons of difference processes are also compared. Finally, some rules and parameters are shown.

中文摘要i
英文摘要ii
誌謝iii
目錄iv
圖表列vi
第一章 緒論1
1.1 研究動機1
1.2 研究方法3
第二章 導論4
2.1微機電系統的發展4
2.2射頻微機電系統6
2.3微波衰減器7
2.4 微波開關8
第三章 文獻回顧11
3.1微波衰減器之文獻回顧11
3.1.1 使用FET11
3.1.2 使用二級體11
3.1.3 光學式的微波衰減器12
3.1.4 利用材料做衰減12
3.1.5 使用FET12
3.1.6 使用二極體13
3.2 微波開關之文獻回顧14
3.2.1 金屬接觸式15
3.2.2 電容耦合式16
第四章 設計原理18
4.1 微波衰減器之原理18
4.1.1 耦合器之原理18
4.1.2 微波衰減器之原理20
4.2 微波開關之原理21
4.3 多層結構之設計原理22
4.3.1 電阻材料之選定22
4.3.2 傳輸線種類的決定23
4.3.3 傳輸線之介電層種類之決定23
4.3.4 傳導層之選擇24
4.3.5 犧牲層種類之決定24
4.3.6 開關接觸點24
4.3.7 介電層之選擇24
4.3.8 上電極25
第五章 電路設計26
5.1 設計流程26
5.2 微波衰減器之設計27
5.2.1 高阻值基板微波衰減器之設計27
5.2.2 1P4M CMOS 微波衰減器之設計29
第六章 製程34
6.1 沉積電阻35
6.2 沉積傳導層37
6.3 定義共平面波導37
6.4 電鍍共平面波導39
6.5 犧牲層及固定埠之製程42
6.6 開關接觸點之製程45
6.7 介電層之製程48
6.8 上電極之製程50
6.9 結構釋放之製程52
6.10 各種製程參數之詳細列表53
6.10.1 清潔53
6.10.2 光阻53
6.10.3 蒸鍍（Sputter）53
6.10.4 蒸鍍（E-Beam）54
6.10.5 電鍍54
6.10.6 溼蝕刻(相容性)57
6.10.7 離子反應蝕刻機操作參數58
6.11 光罩58
6.11.1 光罩之設計58
6.11.2 網片之應用58
第七章 實驗結果59
7.1 製程59
7.2 電阻率之量測59
7.3 共平面波導之量測60
7.3.1 微波衰減器60
7.3.2 全斷式波導61
7.3.3 半斷式波導62
第八章 結論與展望63
8.1 微波衰減器63
8.2 未來的展望63
8.2.1 微波電路63
8.2.2 微波開關63
8.2.3 製程63
8.2.4 以CMOS標準製程製作微波衰減器64
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