臺灣博碩士論文加值系統

CIGS薄膜太陽能電池，是目前被公認為最有前途的吸收材料之一。為了提高太陽能電池吸收層的特性，後續的硒化熱處理製程是不可少的。
本論文主要使用簡化控制過程的銅銦鎵硒（CIGS）單一四元合金靶材。藉由射頻濺鍍以功率100w並基板溫度400℃的參數沉積在基板上來獲得CIGS吸收前驅層。在不同硒化熱處理參數的控制下，製作出p型且低電阻率的CIGS薄膜吸收層。此外，觀察到在硒化溫度550℃的CIGS晶粒尺寸較大，並硒化持溫時間30分鐘的結構較為完整。而拉曼光譜則觀察到了CIGS四元相訊號峰的形成，且能隙可以容易地達到1eV以上。
因此，本研究針對CIGS薄膜吸收層改善的原因作探討，並得到以硒蒸氣硒化的製程為最佳的改善。

CIGS thin film solar cells, has been recognized as one of the most promising absorber materials. For improving the absorber layer characteristics of solar cells, it is essential to followed selenization heat treatment process.
The dissertation mainly uses Copper Indium Gallium Selenium (CIGS) single quaternary alloy target, which can simplify the process control. The power was kept at 100w and substrate temperature was 400 ℃ to deposit on the substrate, absorption precursor layer CIGS by RF-sputtering was obtained. By controlling different selenization heat treatment parameters, p-type and low resistivity CIGS thin film absorption layer can be fabricated. Furthermore, it was observe that the thin film with larger grain size as selenization temperature was 550℃, and the selenization holding temperature time was 30 minutes, crystal structure with better quality. From the Raman spectra signal peak gave an evidence of the formation of the CIGS quaternary compounds, and the energy band gap can be easily reached the above of 1eV.
Therefore, this studies investigated for the enhanced reasons of CIGS thin film absorber layer, and it was expect to provide a better heat selenization method for effective enhancement.

摘要 I
Abstract II
致謝 III
目錄 IV
表目錄 VII
圖目錄 X
第一章 緒論 1
1.1 前言 1
1.2 太陽能電池介紹 2
1.2.1 太陽能電池發展歷史 2
1.2.2 太陽光頻譜 3
1.2.3 太陽能電池的基本工作原理 4
1.2.4 太陽能電池的轉換效率 7
1.2.5 各式太陽能電池的種類介紹 9
第二章 銅銦鎵硒（CIGS）薄膜性質 17
2.1 銅銦鎵硒（CIGS）薄膜吸收層之介紹 17
2.2 銅銦鎵硒（CIGS）薄膜吸收層之結構 17
2.3 銅銦鎵硒（CIGS）薄膜吸收層之特性 20
2.4 銅銦鎵硒（CIGS）薄膜吸收層之製程方法 22
2.4.1 共蒸鍍法（Co-evaporation ） 22
2.4.2 真空濺鍍法（Sputtering） 24
2.4.3 電沉積法（Electrodeposition） 26
2.4.4 化學噴灑熱解法（Chemical spray pyrolysis） 27
2.4.5 塗佈製程（Coating process） 28
2.5 銅銦鎵硒（CIGS）薄膜吸收層之硒化影響 29
第三章 文獻回顧與研究目標 31
3.1 文獻回顧 31
3.2 研究目標 38
第四章 製程設備、分析儀器與實驗步驟 39
4.1 製程設備 39
4.1.1 射頻濺鍍系統 39
4.1.2 真空熱退火處理系統 40
4.1.3 硒蒸氣硒化系統 40
4.1.4 化學水浴法沉積硒化系統 40
4.2 分析儀器 42
4.2.1 高解析熱電子型場發射掃描式電子顯微鏡 42
4.2.2 能量分散光譜儀（Energy Dispersive X-ray Spectrometer; EDS） 44
4.2.3 霍爾效應量測（Hall effect measurement） 45
4.2.4 拉曼光譜儀（Raman spectra） 48
4.2.5 X光繞射分析儀（X-ray Diffractometer, XRD） 48
4.2.6 紫外光/可見光/近紅外光分光光譜儀(UV/Vis/NIR) 49
4.3 實驗步驟 50
4.3.1 基板處理之步驟 50
4.3.2 薄膜製備之步驟 50
4.3.3 真空熱退火處理之步驟 51
4.3.4 硒蒸氣硒化之步驟 51
4.3.5 化學水浴法沉積硒化之步驟 52
第五章 實驗結果與分析討論 54
5.1 濺鍍銅銦鎵硒（CIGS）薄膜 54
5.2 真空熱處理對銅銦鎵硒（CIGS）薄膜的影響 63
5.3 硒蒸氣硒化對銅銦鎵硒（CIGS）薄膜的影響 69
5.4 化學水浴法沉積硒化對銅銦鎵硒（CIGS）薄膜的影響 84
5.5 比較不同硒化熱處理製程對銅銦鎵硒（CIGS）薄膜的影響 92
第六章 結論與未來工作 99
參考文獻 101

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