臺灣博碩士論文加值系統

本論文主要為使用電漿輔助化學氣相沉積(Microwave plasma enhanced-chemical vapor deposition(MP-CVD)在經由圖案化成催化金屬(Ni)陣列(10μm x 10μm)及不同區間(20μm、15μm、10μm、5μm)，並利用不同金屬阻障層(TiN、Ti、Ta)成長奈米碳管，制作成二極場發射元件。
利用電漿輔助化學氣相沉積在催化金屬(Ni)陣列成長奈米碳管，成長出高密度且具方向性準直排列的碳管。改變參數的不同，成長碳管，並藉由掃描式電子顯微鏡(SEM)得知其碳管形貌，比較不同阻障層對於碳管直徑之影響。透過真空電性量測系統量測場發射特性來了解不同的製程參數下所長出碳管和場發射特性之間的相關性，並比較不同直徑大小對於場發射之影響。透過拉曼光譜求得D-band和G-band，兩者面積以一式 相比，若比值越大則石墨化越好，藉以此輔助探討碳管特性
實驗結果得到不同成長電漿功率參數中，電漿功率越高，所得到的石墨化程度越好。不同甲烷流量比例參數中，20%的甲烷流量擁有最好的石墨化程度。不同成長溫度下，溫度越高，石墨化程度越好。在同參數下，不同的阻障層對於石墨化程度依序為TiN＞Ta＞Ti，其碳管直徑大小為TiN＞Ta＞Ti，場發射特性Ti ＞Ta＞TiN。

The present paper mainly was used the microwave plasma enhanced-chemical vapor deposition(MP-CVD) growing carbon nanotube (CNTs) by (Ni) the array (10μm x 10μm) and different spaces (20μm、15μm、10μm、5μm) with four different metals (TiN，Ti，Ta) to be the barrier layer。
The advantage used MP-CVD in the catalyzed metal (Ni) the array to grow the high density and vertically aligned CNTs。Then changed diverse parameters to grow CNTs and compared field emission characteristic by penetration vacuum electric properties measurement system measured field emission properties，the scanning electron microscope (SEM) to visit the appearance of carbon nanotube。And the Raman spectrum to obtain D-band and G-band, two area compare by a type, if the degree more greatly graphitization is better。
By the experiment we can suppose that higher temperature or higher microwave power cause better degree of graphitization。Degree of graphitization:TiN ＞Ta＞Ti，Diameter of CNTs:TiN＞Ta＞Ti。Field emission properties: Ti ＞Ta＞TiN。

摘要 II
Abstract III
謝誌 IV
目錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 2
第二章 碳奈米管的介紹 4
2.1 奈米碳管的簡介 4
2.2 奈米碳管的晶體結構 5
2.3奈米碳管之合成技術 11
2.4 奈米碳管之成長機制 13
2.5 奈米碳管的應用 14
2.5.1 場發射的應用 15
2.5.2 奈米碳管其他應用 17
第三章 實驗方法與原理 21
3.1 實驗架構 21
3.2 實驗儀器 22
3.2.1 製程設備 22
3.2.2分析設備 25
3.3 實驗流程 29
3.3.1 二極體元件製作 29
3.3.2 利用微波電漿輔助化學氣相沉積系統成長奈米碳管 32
3.3.3拉曼光譜分析 34
3.3.4 場發射特性量測 36
第四章 結果與討論 40
4.1 Thermal CVD 製程參數對奈米碳管的影響 40
4.1.1 前處理催化劑顆粒大小對成長奈米碳管的影響 42
4.1.2 不同金屬阻障層對奈米碳管型態的影響 44
4.1.3 不同金屬阻障層對奈米碳管石墨化程度及場發射特性的影響 47
4.1.4 不同氫氣與氮氣流量比對奈米碳管石墨化的影響 51
4.2 MPCVD 製程參數對奈米碳管的影響 56
4.2.1 前處理催化劑顆粒大小對成長奈米碳管的影響 56
4.2.2 甲烷流量對奈米碳管型態的影響 58
4.2.3 成長電漿功率對奈米碳管型態的影響 66
4.2.4 成長溫度對奈米碳管型態的影響 72
4.3 製程參數對奈米碳管石墨化的影響 78
4.3.1 甲烷流量對奈米碳管石墨化的影響 78
4.3.2 成長電漿功率對奈米碳管石墨化的影響 81
4.3.3 成長溫度對奈米碳管石墨化的影響 84
4.4 製程參數對奈米碳管場發射特性的影響 86
第五章 結論 95
參考文獻 97

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