臺灣博碩士論文加值系統

本論文中，我們研究以化合物半導體為基礎的太陽能電池。利用黃光製程的方式以三層接面太陽能電池為基礎製作Ge子電池，並製作單層接面、雙層接面、三層接面太陽能電池，利用太陽光模擬器對各個元件進行不同溫度下的量測。製作單層接面、雙層接面、三層接面太陽能電池並評估各個電池在不同溫度下25度C -80度C中量測開路電壓(Voc)、短路電流密度(JSC)、轉換效率（η）。實驗結果發現Ge子電池在溫度為143度C時開路電壓會趨近於零並且無貢獻於整體電池，再量測變溫 30度C -80度C時我們量測到的光電流大約是25.8 mA/cm2，另一方面我們在30度C時從Ge子電池量到的轉換效率是3.22%同時溫度係數是-0.0373%/C。最後我們在照光與未照光的條件下量測Ge子電池，我們量測的溫度範圍為30度C -80度C，並取用各種不同的電流密度在照光與未照光的電流密度與電壓特性曲線中取得溫敏電壓，接著我們探討溫度與時間的關係，在光源開啟時，溫度上升非常快速，開始上升的速度為每秒上升1度C左右，最後由實驗得知電池溫度飽和在48 度C左右。

The purpose of this thesis, we study compound semiconductor based of the triple-junction solar cell. First, we fabricated the Ge-subcell and we have successfully fabricated single-, double-, triple-junction solar cells. We use the origin overall InGaP-InGaAs-Ge structure to fabricate all junction-type solar cells. The main feature in fabrication of the Ge-subcell is to reserve semiconductor layers of forming the InGaP-subcell and the InGaAs-subcell. Finally we used the solar simulator to perform the temperature dependences of various photovoltaic parameters of the single-, double-, triple-junction solar cells.
For evaluating the single-, double-, triple-junction solar cells in temperature range from 25C-80C. We investigated the important photovoltaic parameters such as open circuit voltage (Voc), short-circuit current density (JSC), and conversion efficiency (η).While the Ge-subcell whose Voc approaches to zero at 143C is the first subcell failing to be a real solar cell. In addition we investigated the photocurrent which is 25.8 mA/cm2 operating in temperature range from 30C-80C. In the other hand, max @30C obtained from the Ge-subcell is 3.22% with corresponding temperature coefficient of 0.0373%/C.Finally, we investigated the possible operating temperature range from 30C-80C on the dark and under sunlight in order to measure the temperature dependences of various photovoltaic parameters of the Ge-subcell. Temperature-sensitive voltages are also gained from current-voltage characteristics of the solar cell biased under 0.8 and 2 mA/cm2 current densities. Furthermore we find out the time-dependent cell temperature. The junction temperature increases quickly with an initial rate as high as ~1C /s when the Ge-subcell is under irradiation. Experimentally estimated cell temperature finally stabilized at 48C.

ABSTRACT (Chinese) ……………………………………………………………....I
ABSTRACT (English) ……………………………………………………………....II
FIGURE CAPTIONS …………………………………………………………….... IV
TABLE CAPTIONS …………………………………………………………….... VII

Chapter 1:
Introduction to Dissertation…………………………………………………………....1

Chapter 2:
Properties of Ge-Subcell Evaluated in-situ in InGaP-InGaAs-Ge Triple-Junction Solar Cells.........................................................................................................................3
2-1 Introduction..............3
2-2 Experimental..............5
2-3 Results and Discussion..............7
2-3-1 Open-circuit voltage, Voc..............9
2-3-2 Short-circuit current density, Jsc..............11
2-3-3 Conversion efficiency, ..............15
2-3-4 Ge-subcell temperature under irradiation............17
2-4 Conclusions..............19
Chapter 3:
Photovoltaic Characteristics of Each Subcell Evaluated in situ in a Triple-Junction Solar Cell........................................................................................................................20
3-1 Introduction..............20
3-2 Experimental..............21
3-3 Results and Discussion..............23
3-3-1 Open-circuit voltage, Voc..............25
3-3-2 Short-circuit current density, Jsc...........29
3-3-3 Conversion efficiency, ..............32
3-4 Conclusions..............36
Chapter 4:
Expectaion, Future Work and Conclusions to Dissertation
4-1 Expectation and Future Work..............37
4-2 Conclusions..............38
Refferences..............41

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