臺灣博碩士論文加值系統

本論文中，以一個傳統的帶差參考電流電路(Bandgap Reference Current Circuit)中使用PNP雙載子接面電晶體(Bipolar Junction Transistors, BJT's)及疊接一個有穩定偏壓電流的P型的互補式金氧半場效電晶體(P-Type Metal-Oxide-Semiconductor Field Effect Transistor, PMOSFET)。PNP BJT在偏壓電流與絕對溫度成正比例的偏壓下以及PMOSFET在溫度穩定偏壓電流的的偏壓下，兩者的偏壓V_EB及V_SG與溫度呈現負溫度係數。在這項電路中，輸出的總電壓是BJT、PMOSFET和NMOSFET的電壓總和。前述兩個電晶體的偏壓呈現近似互補式的非線性溫度特性，但是NMOSFET的電壓呈現高線性溫度特性。因此，溫度感測器模擬狀況呈現良好的線性度為99.9993%。在0℃~120℃的溫度範圍，量測結果呈現-3.73mV/℃的靈敏度且線性度約為99.974%。

In this paper, a traditional bandgap reference current circuit using pnp bipolar junction transistors (BJTs) is cascaded with a constant-current biasing p-type metal-oxide-semiconductor field effect transistor (PMOSFET). Under a biasing current proportional to or insensitive to absolute temperature for a pnp BJT and a temperature-stable biasing current for a PMOSFET, the plots of emitter-base and source-gate bias voltages versus temperature show negative temperature coefficients. In this work, the output voltage is the sum of bias voltages of a BJT, a PMOSFET, and an NMOSFET. The bias voltages of the former two transistors exhibit nearly complementary nonlinear temperature characteristics, but the bias voltage of the NMOSFET exhibits highly linear temperature characteristics. Therefore, the temperature sensor exhibits good simulated linearity of 99.9993%. For a temperature range from 0℃ to 120℃, the fabricated temperature sensor has the sensitivity of -3.73 mV/℃ or so with linearity of 99.974%.

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 v
圖目錄 vi
符號說明 vii
一、 緒論 1
二、 溫度感測器介紹 6
2.1 溫度感測器歷史 6
2.2 溫度感測器設計考量 7
2.2.1 操作溫度範圍(Operation Temperature Range) 8
2.2.2 精確度(Accuracy) 8
2.2.3 解析度 9
2.2.4 成本 9
2.3 帶差參考電路(Bandgap Reference Circuit) 10
2.3.1 帶差參考電壓電路(Bandgap Reference Voltage Circuit) 10
2.3.2 操作溫度範圍(Operation Temperature Range) 16
2.4 雙載子接面電晶體(Bipolar Junction Transistor, BJT) 17
2.4.1 BJT-MOS溫度感測器 21
2.4.2 改良的BJT-MOS溫度感測器 25
三、 BJT-MOS溫度感測器的量測和模擬比較 33
四、 結論與未來展望 37
參考文獻 38

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