臺灣博碩士論文加值系統

隨著觸控面板的普及化，透明導電膜ITO（Indium Tin Oxide）在銦材料成本逐年升高外，其不耐撓曲特性在未來軟電產品應用上也有所限制了，許多業者開發出導電高分子PEDOT (Poly (3,4-ethylene- dioxythiophene))來取代ITO。原因在於PEDOT特性與ITO已無差異了，但成本卻更便宜。
因此本文以工研院機械所開發之大氣壓電漿圖案化設備，針對廠商所開發之PEDOT膜片及觸控電極圖案設計，進行蝕刻製程研究，找出最佳化蝕刻參數：電源供應器功率550W、電源供應器頻率25KHz、氣體種類O2、電漿源高度(Gap) 11mm、電漿源移動速度(Speed)200mm/s、電漿源移動間距(Pitch) 2.5mm，製作出符合10點觸控、劃線功能之觸控面板，並且驗證大氣壓電漿圖案化設備量產的蝕刻能力，達到符合業界7吋平板最小蝕刻線寬150μm 以下目標。

With increasing popularity of touch panel in several consumer electronics applications, the transparent conductive film ITO (Indium Tin Oxide) becomes increasingly expensive because of the use of indium. In addition, ITO is also lack of flexural characteristics which is important in several future applications of consumer electronics product. There has been a continuing effort in developing PEDOT (conductive polymer) to replace ITO, mainly because of its highly flexural property and much lower cost. In this thesis, we intend to demonstrate and optimize the etching technique for commercial PEDOT thin film for touch panel application using an atmospheric-pressure jet (APPJ) developed by ITRI. An optimal set of test conditions, including a power source of 25 kHz and 550 W, an etching gas of oxygen, a treating distance of 11 mm, a moving speed of 200 mm/s and a movement pitch of 2.5 mm, was found to produce satisfied results that is compatible with the industrial requirement of a minimum line width of 150μm in a typical 7-in tablet application. This research demonstrates successfully that the APPJ developed by ITRI can meet the industrial requirement as practical processing equipment for touch panel applications.

中文摘要 ………………………………………………………………Ⅰ
英文摘要 ………………………………………………………………Ⅱ
誌謝 ……………………………………………………………………Ⅲ
目錄 ……………………………………………………………………Ⅳ
表 目 錄 ………………………………………………………………Ⅶ
圖 目 錄 ………………………………………………………………Ⅸ
第一章 緒論……………………………………………………………1
1.1 研究背景……………………………………………………2
1.2 研究動機……………………………………………………3
1.3 研究目的……………………………………………………3
第二章 文獻回顧………………………………………………………4
2.1 大氣電漿源介紹與蝕刻原理………………………………4
2.1.1 大氣電漿源……………………………………………4
2.1.2 電漿特性………………………………………………8
2.1.3 電漿蝕刻原理 ………………………………………12
2.2 PEDOT之簡介………………………………………………14
2.3 投射式電容觸控面板 ……………………………………15
第三章 實驗方法 ……………………………………………………18
3.1 實驗設備架構 ……………………………………………18
3.1.1 電漿源模組 ………………………………………19
3.1.2 MASK模組 …………………………………………20
3.1.3 TCP模組 …………………………………………21
3.1.3 電源供應器模組 …………………………………22
3.2 實驗條件與材料 …………………………………………23
3.2.1 實驗條件 …………………………………………23
3.2.2 實驗材料 …………………………………………24
3.3 量測原理與儀器 …………………………………………25
3.3.1 紅外線熱像儀 ……………………………………25
3.3.2 光穿透度計 ………………………………………26
3.3.3 三用電表 …………………………………………26
3.3.4 工具顯微鏡 ………………………………………27
3.4 實驗流程 …………………………………………………28
3.5 實驗設計 …………………………………………………29
第四章 實驗結果與分析 ……………………………………………30
4.1 實驗方法一 ………………………………………………31
4.2 實驗方法二 ………………………………………………32
4.3 實驗方法三 ………………………………………………33
4.4 實驗方法四 ………………………………………………36
4.5 實驗方法五 ………………………………………………38
4.6 實驗方法六 ………………………………………………41
第五章 結論與未來展望 …………………………………………44
5.1 結論…………………………………………………………44
5.2 未來展望……………………………………………………45
參考文獻 ……………………………………………………………45

[1] 莊惟傑, "光電產業中關鍵材料銦," 工業材料雜誌, vol. 269, pp. 144-151, 2009.
[2] 楊明輝. (2006, 透明導電膜的新發展.
[3] 陳沛霖, "觸控面板新型透明導電材料發展," 光連雙月刊, vol. 80, pp. 21-24, 2009.
[4] 楊明輝, "觸控面板的材料與最新動向," 工業材料雜誌, vol. 270, pp. 181-187, 2009.
[5] 楊明輝, "小型觸控面板的透明電極設計," 工業材料雜誌, vol. 267, pp. 153-160, 2009.
[6] 吳敏文等, "電漿源原理與應用之介紹, " 物理雙月刊, 廿八卷二期, pp. 440-452, 2006年4月.
[7] A. Schutze, J. Y. Jeong, S. E. Babayan, J Park, G. S. Selwyn, R. F. Hicks, “The Atmospheric-Pressure Plasma Jet: A Review and Comparision to Other Plasma Sources”, IEEE Transactions on Plasma Science, Vol. 26, pp.1685-1694, 1998.
[8] 洪昭南, "電漿反應器, " 化工技術, 1995
[9] 楊明輝, "投射電容式觸控面板的原理、結構與材料," 工業材料雜誌, vol. 282, pp. 158-166, 2010.
[10] A. Kuwabara, Shin-ichi Kuroda, H. Kubota, “Preparation of a CVD thin film by an atmospheric pressure low temperature surface discharge plasma torch”, Plasma Sources Science and Technology, Vol. 15, pp.328-331, 2006.
[11] G. R. Nowling, S. E. Babayan, V. Jankovic, R. F. Hicks, “Remote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure”, Plasma Source Science and Technology, Vol. 11, pp.97-103, 2002.
[12] M. Moravej, S. E. Babayan, G. R. Nowling, X. Yang, R. F. Hicks, “Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure”, Plasma Source Science and Technology, Vol. 13, pp.8-14,2004.
[13] S. P. Bugaev, A. D. Korotaev, K. V. Oskomov, N. S. Sochugov, “Properties of diamondlike films obtained in a barrier discharge at atmospheric pressure”, Zhurnal Tekhnicheskoi Fiziki, Vol. 67, pp.100-104, 1997.
[14] Yong-Hyuk Lee, Se-Jin Kyung, Chan-Woo Kim, Geun-Young Yeom, “Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapr deposition at low temperature” Carbon, Vol. 44, No. 4, pp.807-809, 2006.
[15] R. Prat, Y. J. Koh, Y. Babukutty, M. Kogoma, S. Okazaki, M. Kodama, “Polymer deposition using atmospheric pressure plasma glow (APG) discharge” , Polymer,Vol. 41, pp. 7355-7360, 2000.