臺灣博碩士論文加值系統

氫在未來替代能源裡有潛力成為重要的能量來源，因為氫在地球上的含量很豐富，因此吸引許多學者的注目，並且投入研究更有效的產氫方法。應用氧化物的光電化學(Photoelectrochemical，PEC)效應是其中最被看好的方法之一。氧化亞銅(Cu2O)是ㄧ個p-type的半導體，它具有幾項優勢，(1)理論能隙在2.0~2.2eV之間，(2)在可見光下具有高的吸收率，(3)含量豐富，(4)無毒性。
本實驗使用電化學沉積p-type Cu2O膜；鍍液組成包含有CuSO4與乳酸，使用NaOH調整pH值。試片採用(111)優選取向的Cu2O膜，使用恆定位儀進行光電化學檢測，光源為150瓦鹵素燈。鍍膜的結構分析則使用了XRD，XPS 和 FE-SEM。
實驗結果顯示Cu2O有光電化學效應。而在XPS檢測結果發現，表面的Cu2O膜在大氣環境下無須給予任何驅動力就會生成一層CuO。試片進行循環伏安掃描後，根據XPS檢測結果，Cu2O的表面會沉積一層Cu(OH)2。由ICP檢測電解液證實，在陰極反應時Cu2O會有還原成Cu的現象，導致在陽極反應時再氧化成Cu(OH)2。

Hydrogen (H2) has the potential in the future alternative energy because of its abundance on earth. Therefore, many researchers are attracted to develop hydrogen production with more efficient methods. The application of the photoelectrochemical (PEC) effect of some oxides is one of the most promising measures. Copper(I) oxide (Cu2O) is an attractive oxide of p-Type semiconductor in this regard. It has several advantages, such as: (1) band gap energy of 2.0–2.2 eV, (2) high absorption coefficient over the wavelength range in the solar spectrum, (3) non-toxic and (4) highly abundant.
In this study, p-type Cu2O films were electrodeposited in a bath composed of an aqueous solution of Cu2SO4 stabilized with lactic acid as chelating agent. The pH value of the electrolyte was adjusted by adding a NaOH aqueous solution. The photoelectrochemical response of films with (111) preferred orientation was measured on a potentiostat electrochemical analyzer. A halogen lamp of 150 W was used as the light source. XRD, XPS and FE-SEM were used for structural investigations.
Experimental results show that Cu2O films have strong photoelectrochemical response. In the XPS investigation, surface layer of the deposited Cu2O was further oxidized to CuO during drying and handling of samples in the ambient atmosphere. After cyclic voltammetry (CV) test, Cu(OH)2 layer was deposited on the surface, according to the XPS experimental results. The fact reveals that Cu2O was reduced to pure copper in the cathodic reaction and further oxidized to Cu(OH)2 in the anodic reaction. The reduction was confirmed by the ICP experiment of the electrolyte after the cathodic reaction.

明志科技大學碩士學位論文指導教授推薦書 i
明志科技大學碩士學位論文口試委員審定書 ii
明志科技大學學位論文授權書iii
誌謝 iv
摘要 v
ABSTRACT vi
目　錄 viii
表目錄 xi
圖目錄 xii
第一章 緒論 1
1.1 前言 1
1.2 氧化亞銅簡介 2
1.3研究背景與目的 3
第二章 理論基礎與文獻回顧 4
2.1 電化學理論基礎與文獻回顧 4
2.1.1 電化學沉積法 4
2.1.2 氧化亞銅之電化學沉積 4
2.2光催化原理 6
2.2.1本多-藤嶋效果的發現 6
2.2.2 光觸媒原理 6
2.2.3 光觸媒的催化原理 7
2.2.4 光分解水的原理 7
2.3氧化亞銅之光電化學 10
第三章 實驗規劃與方法 13
3.1 實驗相關流程說明 13
3.2 實驗材料與規格特性 13
3.2.1 鍍液藥品規格 13
3.2.2 基板製備 14
3.3 電化學沉積氧化亞銅 15
3.3.1試片前處理 15
3.3.2鍍液配製 15
3.3.3 電化學沉積 15
3.3.4 電化學測試 16
3.3.5腐蝕電位測試 17
3.3.6循環伏安測試 17
3.3.7線性掃描伏安法 19
3.4實驗檢測設備與原理 20
3.4.1 紫外光/可見光/紅外光光譜儀 20
3.4.2 輪廓儀 22
3.4.3 感應偶合電漿 22
3.4.4 X光繞射儀 23
3.4.5 X射線光電子光譜 24
3.4.6 場發射掃描式電子顯微鏡 26
第四章 實驗結果與討論 28
4.1 氧化亞銅結構分析 28
4.2氧化亞銅光性質 34
4.3氧化亞銅電化學檢測 37
4.3.1氧化亞銅光電反應 37
4.3.2 不同掃描速率對氧化亞銅在循環伏安掃描的影響 40
4.3.3 不同掃描範圍對氧化亞銅在循環伏安掃描的影響 43
4.3.4 定電位掃描對氧化亞銅的影響 50
第五章 結論 57
5.1氧化亞銅結構分析: 57
5.2氧化亞銅光性質 57
5.3氧化亞銅電化學檢測 57
5.3.1氧化亞銅光電效應 57
5.3.2 不同掃描速率對氧化亞銅在循環伏安掃描的影響 57
5.3.3 不同掃描範圍對氧化亞銅在循環伏安掃描的影響 58
5.3.4 定電位掃描對氧化亞銅的影響 58
第六章 參考文獻 59

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