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研究生:吳宗荃
研究生(外文):Zong-ChenWu
論文名稱:以第一原理計算與實驗方法探討鑭、鈦摻雜對鐵酸鉍缺陷形成與漏電流機制之影響
論文名稱(外文):Influences of La and Ti Doping on the Defect Formations and Leakage Current of BiFeO3 : A Combination of First-Principles Calculations and Experimental Study
指導教授:許文東許文東引用關係
指導教授(外文):Wen-Dung Hsu
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:59
中文關鍵詞:缺陷形成能導電機制第一原理模擬固態反應法
外文關鍵詞:Defect formation energyconduction mechanismfirst-principles simulationssolid state reaction method
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  • 下載下載:13
  • 收藏至我的研究室書目清單書目收藏:0
 BiFeO3(統稱BFO)具有很高的居禮溫度TC(~850℃)和尼爾溫度TN(~370℃),在室溫下同時擁有鐵電性和反鐵磁性質,是目前最富潛力的複鐵性材料之一。但因其較大漏電流和製程產生之雜相,使其鐵電性質較差。
本論文探討BFO分別以La取代Bi和Ti取代Fe,對BFO性質的影響與改變。Bi3+離子和La3+離子半徑相近,Ti4+離子和Fe3+離子半徑亦相近,故本論文希望在BFO鈣鈦礦結構中,藉由La3+離子取代Bi3+離子和Ti4+離子取代Fe3+離子來改善BFO漏電流過大的問題。
  我們利用固態反應法製作出BFO塊材和分別摻雜La3+離子和Ti4+離子的BFO塊材,利用導電率量測、漏電流量測、XRD、XPS,並輔以第一原理計算缺陷形成能、bader charge、能態密度(Density of state),探討不同元素摻雜對BFO其缺陷形成與漏電流機制的影響。
BiFeO3 (BFO), which is one of the most potential multiferroics ,has high Curie temperature TC(~1100 K) and high Néel temperature TN(~643 K) resulting to the coexistence of ferroelectricity and ferromagnetism at room temperature.
This study mainly reported the influence and change by the doping of lanthanum and Titanium.Bi3+ ions have close size as La3+ ions, and Fe3+ ions have close size as Ti4+ ions, so we hope to reduce the leakage current with the substitution of La3+ ions for Bi3+ ions and Ti4+ ions for Fe3+ ions in the perovskite BiFeO3 structure.
Bulks of BiFeO¬3 and BiFeO3 doping with La3+ or Ti4+ were prepared by the usual solid state reaction method. X-ray diffraction(XRD), conductivity measurements ,leakage current measurements, X-ray photoelectron spectroscopy(XPS) are utilized and supplemented by first-principles calculation of defect formation energies, Bader charge, the density of states (DOS),to discuss its impact on the BFO leakage defect formation mechanisms with different doping.

中文摘要 I
英文摘要 II
誌謝 VII
總目錄 VIII
表目錄 X
圖目錄 XI
第一章 緒論 1
1-1 前言 1
1-2 研究動機與方向 2
第二章 理論基礎及文獻回顧 4
2-1 鐵電材料 4
2-2 磁性材料 8
2-3 漏電流機制 12
2-4 BiFeO3的晶體結構 15
2-5 BiFeO3相圖 18
2-6 BiFeO3的鐵電性 18
2-7 模擬基礎理論 21
第三章 實驗設計與模擬方法 23
3-1實驗藥品 23
3-2 BiFeO3粉末製備方法 23
3-3 BiFeO3塊材製備 25
3-4 BiFeO3製程流程圖 26
3-5 計算模型建置 27
3-6 形成能計算 30
第四章 結果與討論 31
4-1 XRD結構分析 31
4-2 缺陷形成能(defect formation energy)與電荷分析(bader charge analysis) 35
4-3 XPS分析 37
4-4 導電機制分析 41
第五章 結論 45
參考文獻 46
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