臺灣博碩士論文加值系統

本論文係利用化學氣相沉積的方式將硒化鋅異質磊晶於砷化鎵基板上,磊晶成長完成之硒化鋅薄膜分別藉由SEM, SIMS, XRD 和PL 加以探討薄膜特性,因砷化鎵和硒化鋅晶格只有0.27%不匹配,經由觀察得知硒化鋅磊晶層之表面平滑,硒和鋅成份分佈均勻而且薄膜結構為單晶。
由PL光譜在10K時測得硒化鋅薄膜在443nm(2.78eV)有一能隙光造成的NBE peak。隨著溫度的升高NBE peak強度減小,線寬變寬並且波峰往長波長偏移。而經銦摻雜的硒化鋅薄膜在456nm(2.73eV)有一施體階造成的peak。
在元件的製作方面,利用此硒化鋅異質磊晶層製作異質接面雙載子電晶體，測得其電流增益為5.8。另外也利用此硒化鋅異質磊晶層製作平面型MSM光檢測器，測得最佳短波長光電元件。由實驗得知在無抗反射層的情況下，Au-ZnSe/GaAs MSM-PD固定偏壓10V、470nm的照光情況下，其光響應度為3.41A/W 。
為了提升在Au-ZnSe/GaAs MSM-PD的零敏度，可利用整合Au-ZnSe/GaAs MSM-PD 和ZnSe/GaAs HBT來達成此目標。經由測量可得知Au-ZnSe/GaAs MSM-PD產生的光信號可以經由ZnSe/GaAs HBT 獲得放大。由結果得知將硒化鋅成長於砷化鎵基板所製作之光電元件極適合來製作短波長藍光偵測器，在未來短波長元件的OEIC應用上極具潛力。

In this thesis, the ZnSe epilayers were grown on an oriented-(100) GaAs substrate using low cost furnace CVD system. The ZnSe epilayer were analyzed by using SEM, SIMS, XRD, and PL measurements. Because there is approximately 0.27% lattice mismatch only between ZnSe and GaAs substrate, the surface morphology of the ZnSe epilayer is smooth, the distribution of the main elements is uniformity and the ZnSe epilayer is to a single crystal.
From the PL measurement at 10K for the ZnSe epilayer, it indicates the NBE excitation emission is at 443nm(2.78eV). With the increasing of the temperature, the intensities of the NBE peak decrease and the FWHM becomes broader. Then it shifts toward longer wavelengths region. For the In-doped ZnSe epilayer, the D1 peak at 456nm(2.73eV) can be observed due to the In atoms replace the Zn sites that induce the transition between a shallow donor and the valence band level.
We utilized the n-ZnSe epilayer to fabricate the ZnSe/GaAs HBT. The current gain of ZnSe/GaAs HBT is 5.8. In addition, we also utilized the n-ZnSe epilayer to fabricate Au-ZnSe/GaAs planar metal-semiconductor-metal photodetectors for optoelectronic integration of short-wavelength components. The Au-ZnSe/GaAs MSM-PD without any passivation and antireflection coating exhibits the photo-responsivity is 3.41A/W at 470nm light wavelength, and bias at 10V.
In order to improve the sensitivity of Au-ZnSe/GaAs MSM-PD, we integrated Au-ZnSe/GaAs MSM-PD and ZnSe/GaAS HBT in one chip. The signal of Au-ZnSe/GaAs MSM-PD can be amplified by ZnSe/GaAS HBT to raise the photo-responsivity. It demonstrated the studying of integrated photodetectors and amplifiers based on ZnSe grown on GaAs substrate are useful to develop low cost blue light opto-electronic devices and have a great potential for the applications of the short wavelength OEIC.

CONTENTS
CHAPTER 1. Introduction …..………………………..……….…1
1-1. Overview …………….....……….……..….......……...…….1
1-2. Thesis Outline ……….…..………........…....…….…….….4
CHAPTER 2. Theoretical Analysis of ZnSe/GaAs
Heteroepitaxy ………………………………..……5
2-1. Introduction ………………………………………………..5
2-2. Growth Process ……………………..…….….…...……....6
2-2-1. Kinetics of Epitaxial Growth………………………...6
2-2-2. Gas-Phase Mass Transfer………………………….…8
2-2-3. Boundary Layer Theory………………………..……..9
2-3. ZnSe/GaAs Heteroepitaxy …………….......…..….…....10
2-4. ZnSe/GaAs Heterojunction ……………..……….….…11
2-5. In-Doped ZnSe ….…......…………………….…………..14
2-6. Wet Etching …….………......………......…….….………15
CHAPTER 3. Quality Analyses of ZnSe/GaAs Heterojunction
Epilayer and Optical Properities .……………….17
3-1. Introduction ………………………………………….…17
3-2. Surface Morphologies …………………..............…….17
3-3. Crystallographic Properties………..….................…..18
3-4. Uniformity…………………….…………................….19
3-5. Photo-Luminescence Properties ………………...…21
3-6. Conclusions ……..…….......…………......…...........…....22
CHAPTER 4. Theory and Fabrication of ZnSe/GaAs Heterojunction Bipolar Transistor…………...….24
4-1. Introduction …………….......……………..................….24
4-2. Theoretical Analysis ……………...…..................…..25
4-2-1. Emitter Injection Efficiency …………....…..…25
4-2-2. Common-Emitter Current Gain …....…….......….26
4-2-3. Collector-Emitter Offset Voltage……....…….......26
4-2-4. High-Frequency Characteristics…………..……....28
4-3. Device Structure and Fabrication ….……...….…..28
4-3-1. Device Structure ………...…………………..........….28
4-3-2. Emitter Metallization……………………….….....….29
4-3-3. Base Metallization..……....….………..….............29
4-3-4. Device Isolation and Collector Metallization.....30
CHAPTER 5. Results and Discussions of ZnSe/GaAs Heterojunction Bipolar Transistor ….…...……..31
5-1. Effect of Indium Doping for ZnSe/GaAs HBT… 31
5-2. B-E and B-C Junction Diodes………..…………..32
5-3. Common-Emitter I-V Characteristics…….….……33
5-4. Conclusion ………………………………..…………..34
CHAPTER 6. Fabrication and Discussions of Integrated Metal-Semiconductor-Metal Photodetector and ZnSe/GaAs Heterojunction Bipolar Transistor…………………………………………36
6-1. Introduction …………….....…..…………....................36
6-2. Metal-Semiconductor-Metal Photodetector.……36
6-3. Theoretical Analysis ……………………..…………..37
6-3-1. Metal-Semiconductor-Metal Junction.……....….37
6-3-2. Photo-Current Mechanisms…....……..….....….38
6-3-3. Photo-Responsivity……….….…………........….39
6-3-4. Quantum Efficiency…………………………….40
6-3-5. Dark current………..…………………………….40
6-4. Device Structure and Fabrication for Integrated MSM-PD and ZnSe/GaAs HBT………………..41
6-5. Results of integrated ZnSe/GaAs MSM-PD and HBT……………………………..……………….43
6-5-1. Photo-Responsivity…………….………………43
6-6. Conclusion……..……………………………..44
CHAPTER 7. Conclusions ……..…………….....……..................….45
7-1. Summary …………….………….....………................….45
7-2. Further Expectation ….………………….…..........…....46
References ………………..………………………....….………..................…....48
Figures ………..………....……………………………...…………...............…....54

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