臺灣博碩士論文加值系統

本論文中，我們研製新型多層底部抗反射層結構，此技術能適用於高數值孔徑與修正照明的氟化氬曝光系統中。此種多層結構，對於不同數值孔徑與多種高反射率基板，具有較大的厚度誤差容忍度。此外，多層底部抗反射層再曝光時，其聚焦深度將大於單層底部抗反射層。由於多層底部抗反射層製作較為複雜，為了簡化製程，我們提出一種新型漸變吸收式底部抗反射層，具有多層底部抗反射層的優點。
此新型底部抗反射層是由氮化矽或氮氧化矽材料所組成，配合氧電漿處理方式，可以獲得光學漸變式薄膜。根據等效介質理論，並結合材料分析的結果，可以證明氧電漿過程造成折射率漸變之薄膜結構。經由模擬證明，漸變式底部抗反射層對於不同數值孔徑，其厚度誤差容忍度將大於單層底部抗反射層。除此之外，光阻內的駐波效應與底材的鹼性逸氣都可以明顯的降低。實驗結果顯示光阻將具有理想輪廓，而且沒有T形頂(T-Top)與底腳(Footing)的現象。論文中也分析經氧電漿處理後薄膜的特性變化，如光學的穩定性、蝕刻率與表面粗糙度等，實驗結果顯示電漿處理所製作的底部抗反射層，極具有潛力能夠適用於氟化氬(193奈米波長)與氟(157奈米波長)雷射光學微影中。

A new multi-layer bottom anti-reflection coating (BARC) applied to an ArF exposure system with high numerical aperture and modified illumination is proposed and studied. Such a multi-layer BARC has a larger thickness tolerance for different numerical aperture and highly reflective substrates. Besides, it has larger depth of focus (DOF) than single-layer one during exposure. In order to simplify the complication in fabrication of a multi-layer BARC, a new gradient absorption BARC structure that has the advantages of multi-layer BARC is studied.
The new BARC films are composed of silicon nitride or silicon oxynitride films, both of which are treated by oxygen plasma to form a gradient absorption optical film. By using the effective medium theory and the results of material analysis, a gradient absorption BARC structure is demonstrated experimentally. Simulation results show that the gradient absorption BARC is capable of providing larger tolerances for thickness than a single layer BARC at different numerical aperture. Additionally, swing effects in the resist and alkaline outgassing from substrate are significantly reduced. Experimental results indicate that the resists have an ideal profile without T-top or footing after development. We experimentally analyzed optical stability, etching rate, surface roughness and other such characteristics of the BARC films with and without plasma treatment. This study shows that the plasma treatment process have great potential for BARC application in both ArF (193 nm wavelength) and F2 (157 nm wavelength) lithography.

摘要.......i
Abstract.......ii
誌謝.......iii
目次.......iv
表目錄.......v
圖目錄.......iv
第一章緒論.......1
1.1前言.......1
1.2研究動機與目的.......3
1.3研究內容.......4
第二章　光學微影理論.......5
2.1　光學微影曝光系統.......5
2.2　反射光對光阻的影響.......13
2.3　抗反射層理.......18
2.4　鹼性污染對化學放大型光阻的影響.......20
2.5　去光阻與蝕刻製程對底部抗反射層的影響.......22
2.6　非均勻薄膜之分析.......24
第三章　多層底部抗反射層之模擬.......26
3.1底部抗反射層的結構.......26
3.2影響反射率的因素.......27
3.3聚焦深度受環型偏軸照明的影響.......32
3.4反射率與清晰曝光劑量的駐波圖.......34
第四章漸變式底部抗反射層之設計與製作.......36
4.1光阻內的駐波效應.......38
4.2電漿改質氮化矽薄膜之研究.......41
4.3電漿改質氮氧化矽薄膜之研究.......64
第五章漸變式底部抗反射層之分析.......79
5.1折射率分佈情形.......79
5.2漸變層深度對反射率的影響.......80
5.3數值孔徑對反射率的影響.......82
第六結論.......83
參考文獻 .......85

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