臺灣博碩士論文加值系統

摘要
一般的感測器中，通常需要量測的訊號都非常的小。如果採取打線的方式將訊號接出來，則因為寄生電容與寄生電阻的產生，使的原本就很小的訊號，將與雜訊混合在一起而使雜訊比變小，當我們將此訊號放大時，我們雖會得到較大的訊號但是雜訊比依然很小，這會增加我們量測上的困難。本篇論文中，欲改善雜訊比的目標是微陀螺儀，它是採取陽極接合的方式，經過乾式蝕刻而製做出來並且黏附在玻璃上面，然後打線將訊號讀出，此製程具有簡單性及可行性。但是因為玻璃不適合一般IC製程，所以無法將放大電路與結構坐在同一片矽晶元上。本篇論文在於提出一個新的製程，利用融合接合的方式使放大電路可以與結構做在同一片矽晶圓上。讓訊號在拉出來做放大與量測前，即可做一個初步的放大，提高雜訊比。

摘要……………………………………………………………………i
Abstract…………………………………………………………………ii
Contents………………………………………………………………iii
Table List……………………………………………………………v
Figure List………………………………………………………………vi
Chapter 1 Introduction…………………………………………….P. 1
Chapter 2 The Fabrication Process and Technology………P. 4
2.1 The Fabrication Process of Micro Mechanism Ring Gyroscope…………………………………………………………………P. 4
2.2 Fusion Bonding………………………………………P. 5
2.2.1 Hydrogen Bonding…………………………P. 6
2.2.2 Wet Chemical Hydrophilization of Si or SiO2 Surface.P. 6
2.2.3 Thermal Treatment of the Bonded Pairs………………P. 8
2.3 Lithography…………………………………………P.14
2.3.1 Coating………………………….……………...….……P.14
2.3.2 Soft Bake…………………………..………..…….….…P.17
2.3.3 Exposure……………………...……………….………..P.18
2.3.4 Develop………………………………………………....P.18
2.3.5 Hard Bake………………………………………………P.19
2.4 ICP-RIE……………………………………………….….….P.19
2.5 KOH & TMAH………………….……………….…………..P.22
2.5.1 Introduction……………………………………..…….P.22
2.5.2 The properties of TMAH………………………..……P.22
2.5.3 The properties of KOH…………………………………P.24
Chapter 3 The Problem in the Process Rout………………P.26
3.1 About Fusion Bonding………………………………………P.26
3.1.1 influence of particles, surface step and cavities……P.26
3.1.2 Bubble diameter and particles size………...……..…….P.27
3.1.3 influence of surface flatness and cavities……………P.28
3.2 About lithography…………….………………………….….P.30
3.3 Loading Effect in the Process of ICP-RIE…………P.30
Chapter 4 Experiment Result…………………………………P.32
Chapter 5 Conclusion………………………………………P.34
Reference…………………………………………………………P.35

[1] Q.-Y. Tong , U. G sele “Semiconductor Wafer Bonding:Science and Technology”,A Wiley-Interscience Publication, John Wiley&Sons,INC. , 1999.
[2] Werasak Sonphao and Somsak Chaisirikul “ Silicon Anisotropic Etching of TMAH Solution” IEEE, ISIE 2001, KOREA
[3] H.Seidel, L. Csepregi, A. Heuberger, H. Baumgartel “Anisotrpic Etching of Crystalline Silicon in Alkaline Solutions” J. Electrochem. Soc., 1990.
[4] Kenji Tokoro, Daisuke Uchikawa, Mitsuhiro Shikida, and Kazuo Sato “Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions” International Symposium on Micromechatronics and Human Science, 1998.
[5] Kenji Tokoro , Daisuke Uchikawa, Kazuo Sato, mitsuhiro Shikida “Comparision of Anisotropic Etching Properties between KOH and TMAH Solutions”IEEE,International Symposium on
Micromechatronics and Human Science, 1999
[6] J.W. Coburn, “Plasma Etching and Reactive Ion Etching”, IBM Research Laboratory San Jose, California, 1982
[7] ”AZ 4000 Series Photoresist for Thick Film Application”, Catalog, Hoechst.
[8] S. Wolf and R. N. Tauber, “Silicon processing for the VLSI era,” in Process Technology. CA: Lattice, 1986, vol. 1, pp. 434-438.
[9] S. Kong, M. Minami, M.Esashi, “Fabrication of Reactive Ion Etching System for Deep Silicon Machining, TIEE Jpn. 117-E(1997) 10-13.
[10] Stanley Wolf, Richard N. Tauber, “Silicon Processing for the VLSI Era”, Lattice Press, Sunset Beach, California, 1986.
[11] S.F. Yoon et al., “The effect of elevated softbake temperature on high resolution positive photoresist”, Solid State Technology, vol.32(2), p89, 1989.
[12] Putty, Michael Williaw, “A Micromachined Vibrating Ring Gyroscope”, Technical Report No.245, Department of Electrical
Engineering and Computer Science, University of Michigan, Arm Arbor, 1994.
[13] Thor Juneau, A.P. Pisano, “Micromachined Dual Input Axis Angular Rate Sensor”, Solid-State Sensor and Actuator Workshop, Hilton-Had, South Carolina, June 2-6, 1996, pp299-302.
[14] P.Greiff , B. Boxenhorn, T.King, L. Niles, “Silicon Monolithic Micromechanical Gyroscope”, Transducers’91, San Francisco, CA, USA; 24-27 June 1991, pp.966-8.