臺灣博碩士論文加值系統

我們用 InAs/GaAs/AlGaAs的材料，做成了量子點半導體雷射，它和一般的量子井雷射比較，具有較小的起始電流密度，及較高的特性溫度，若我們能找到好的長晶條件，使雷射能夠發出1.3μm通訊用的波長，這將會是一個具有小體積，低價格，低功率，低驅動電流，低溫度影響(temperature dependence)及高可靠度的一個好的通訊發光元件。
本實驗我們使用了另一個新的製程，也就是利用氧化的方式，在雷射主動層的上下，各氧化出一層絕緣的氧化層，藉由控制氧化層的氧化深度，侷限住電流流經的路徑，這樣的製程方式，非常適合做成小寬度的半導體雷射，因為通常雷射的條紋寬度愈小，電流的散佈愈嚴重，若能使用氧化的方式，就能大幅的改善這種情況，做出一個具有非常小起始電流的量子點半導體雷射。

We have successfully fabricated the InAs/GaAs/AlGaAs heterostructure Q.D. lasers with ground state lasing . Comparing with Quantum well lasers , it has smaller threshold current density and higher characteristic temperature . In suitable epitaxy condition , We can make a small size , cheap , low power consuming , low driving current , low temperature dependence and good reliability communication light emitting device with 1.3um .
In the experiment , We have developed a new process with insulating oxidation layers that sandwiching the active layer . This process is suitable for small width semiconductor laser in confining current path by the depth of oxidation layers . Usually the smaller width stripe laser , it has the worse current distribution. The bad situation can be greatly improved by the oxidation process .

目錄
中文摘要…………………………………………………………………… i
英文摘要…………………………………………………………………… ii
致謝………………………………………………………………………….iii
第一章簡介.………………………………………………………......1
第二章基本概念………………………………………………………...3
2.1 雷射的臨界條件與縱向光模……………………………….3
2.2 雷射特性……………………………………………………...5
2.3 量子點的行程…………………………………………….…..7
2.4 III-V半導體的氧化成長………………………………….….8
第三章 半導體雷射製程………………………………………………….16
3.1 雷射結構……………………………………………………...16
3.2 傳統量子點雷射二極體製程……………………………….19
3.3 氧化型雷射二極體製程…………………………………….23
第四章 實驗量測結果與討論…………………………………………….28
4.1 傳統的雷射製程結果……………………………………….28
4.2 氧化型雷射製程結果……………………………………….33
4.3 PL (photoluminescence)量測…...…………………………..35
4.4 EL (Electroluminescence)…………………………………..36
第五章 結論………………………………………………………………..60
參考文獻…………………………………………………………………….61

參考文獻
[1] Shun Lien Chuang, Physics of Optoelectronic Devices
[2] Mitsuru Sugawara, Self-Assembled InGaAs/GaAs Q.D. semiconductor and semimetals, Vol 60
[3] Sze, Physics of Semiconductor Devices
[4] Joseph T. Verdeyen, Laser Electronics
[5] Nikolai N.Ledentsov, M.Grundmann, F.Heinrichsdorff, Dieter Bimberg, Member, IEEE, V.M. Ustinov, A.E.Zhukov, M.V.Maximov, Zh.I.Alferov,and J.A.Lott, Quantum-Dot Heterostructure Lasers, IEEE Journal Of Selected Topics in Quantum Electronic, Vol.6, No.3, May/June 2000
[6] Diana L.Huffaker, Member,IEEE, G.Park, Zhengzhong Zou, O.B.Shchekin,and Dennis G.Deppe,Fellow,IEEE, Continuous Wave Low-Threshold Performance of 1.3um InGaAs/GaAs Quantum-Dot Lasers, IEEE Journal Of Selected Topics in Quantum Electronic, Vol.6, No.3, May/June 2000
[7] Jin K.Kim, Ryan L.Naone,and Larry A.Coldren,Fellow,IEEE, Lateral Carrier Confinement in Miniature Lasers Using Quantum Dots. IEEE Journal Of Selected Topics in Quantum Electronic, Vol.6, No.3, May/June 2000