Abstract (in Chinese) I
Abstract (in English) III
誌謝 V
Contents VII
Table Captions IX
Figure Captions X
Chapter 1 Introduction 1
1-1 Background 1
1-2 Motivation 3
1-3 Organization of this thesis 4
Chapter 2 Relevant Theory and Experimental Apparatus 9
2-1 Theory of Metal-Semiconductor-Metal photodetectors 9
2-1-1 Metal-Semiconductor-Metal photodetectors 9
2-1-2 Current Transport Mechanism 10
2-2 Experiment Apparatus 11
2-2-1 Radio frequency (RF) sputter 11
2-2-2 Horizontal vacuum furnace 13
2-2-3 Electron-beam (E-beam) evaporator 14
2-2-4 X-ray Diffraction (XRD) system 14
2-2-5 Current-Voltage (I-V) measurement system 15
Chapter 3 Improvement of thermal-induced degradation in ZnO-based photodetector 24
3-1 Introduction 24
3-2 Experimental processes 25
3-3 Material investigation of ZnO and ZnO/Ag 27
3-4 I-V measurement and analysis of ZnO-based photodetectors 28
3-5 Summary 33
Chapter 4 Conclusions and Future Works 53
4-1 Conclusions 53
4-2 Future Works 54
4-2-1 The other ways to fabricate p-n junction with ZnO 54
4-2-2 Synthesis three-dimension (3D) nanostructure of ZnO 54
References 56
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