臺灣博碩士論文加值系統

在本論文中，我們主要利用微螢光光譜(Micro-Photoluminescence, Micro-PL)、與光激發螢光光譜(Photoluminescence Excitation, PLE)等方法，研究氮化鋁鎵薄膜表面V型缺陷的光學特性。微螢光光譜顯示，隨著NH3流率增加，鋁組成濃度上升時，除了Inbe譜峰外發現在缺陷處產生一個新的與缺陷相關的螢光躍遷IV。由變溫微螢光光譜中Inbe、IV譜峰位置隨溫度的移動，可以看到因侷限能態(Localized States)形成所導致的S-shape的現象。此處我們用變溫Micro-PL強度所做的阿瑞尼士圖(Arrhenius Plot)來計算，Eloc的能量若換算成溫度恰好與S-shape的特殊變化之轉變溫度相符。而考慮激發光強度對螢光光譜變化的關係可以得知，Inbe、IV兩個躍遷過程並不屬於施子受子對(Donor-Acceptor Pair, DAP)的躍遷。我們再根據PLE的結果，加上前述資料，嘗試提出以下的解釋：V型缺陷造成了新的躍遷能譜IV，而對應此譜峰IV相關的能帶為一缺陷能階，可能為類受子態的鎵（Ga）原子空缺；最後結合活化能的資料，畫出氮化鋁鎵的能階圖，並且定義出Inbe與IV等之間的能階位置。

We have studied optical properties of AlGaN films grown by metal organic chemical vapor phase epitaxy under various ammonia flow rate. From micro-photoluminescence (Micro-PL) spectra, there is an extra peak in the V-defect, which is 0.1 eV lower than the near band edge emission. The origin of this extra peak is the defect band induced by V-defect. In order to determine the characteristics of Inbe, and IV, the excitation power dependent measurements were carried out indicating that they are not from donor-acceptor pair (DAP) transitions. Furthermore, the temperature dependence of Micro-PL was studied and the S-shape behavior was observed in the spectrum as due to the spatial fluctuation, for instance, Ga vacancy formed localized states. For Al0.9Ga0.91N, the activation energy of 27.8 meV and the exciton localization energy of 6.1 meV film for Inbe were obtained from the Arrhenius plot. However, for IV, the activation energy increases to 65.1 meV and the localization energy increases to 7.6 meV. By using the photoluminescence excitation (PLE) technique, we found that the V-defect created new energy levels that are responsible for the new IV emissions. We suggested that the broad band from the V-defect is probably related to acceptor-like level due to Ga vacancy.

中文摘要......................................................i
英文摘要....................................................iii
致謝.........................................................iv
目錄..........................................................v
圖表目錄....................................................vii
第一章 序論..................................................1
第二章 理論背景..............................................5
2-1 氮化鋁鎵V型缺陷...........................................5
2-2 X-ray 繞射分析............................................8
2-3 微螢光激發光譜（Micro-PL).................................9
2-4 光激發螢光光譜(PLE)......................................15
第三章 實驗步驟.............................................16
3-1 樣品的製備...............................................16
3-2 微螢光激發光譜量測系統...................................17
3-3 光激發螢光光譜量測系統...................................20
第四章 結果與討論...........................................21
4-1 氮化鋁鎵V型缺陷與鋁組成之關係............................21
4-1-1 V型缺陷之微螢光激發光譜分析............................21
4-1-2 V型缺陷之X-ray繞射譜線分析.............................24
4-2 變溫微螢光激發光譜.......................................26
4-2-1 S-shape 現象分析.......................................26
4-2-2 V型缺陷之活化能分析....................................30
4-3 V型缺陷對能階之影響......................................32
4-3-1 激發光強度變化分析.....................................32
4-3-2 光激發螢光光譜譜線分析.................................35
4-3-3 V型缺陷能階與鋁組成之關係..............................37
4-4 氮化鋁鎵V型缺陷能階分析..................................39
第五章 結論.................................................41
參考文獻.....................................................45

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