臺灣博碩士論文加值系統

本論文利用射頻磁控濺鍍法沉積氧化鋅摻鋁(ZnO:Al，AZO)於玻璃與N型矽基板上，首先研究不同溫度RT到250℃對AZO薄膜的光電特性影響。其結果顯示製程溫度250℃薄膜最低之電阻率(1.917x10-3 Ω-cm)、高的遷移率(9.27 cm2/vs)和最高載子濃度(3.51x1020 cm-3)和在可見光區(400-800nm)的透光率約為80%以上。但製作成太陽能電池卻不是250℃擁有比較高的電池效率，推測在升溫製程時造成過厚的氧化層(SiOX)導致電池效率下降，因為二氧化矽(SiOX)會隨溫度成長。所以思考一個實驗方法來抑制二氧化矽的成長，首先長一層薄的AZO薄膜直接在濺鍍機裡做一個真空退火的動作，目的在於讓這層薄的AZO薄膜更緻密，來抑制二氧化矽的成長達到鈍化的作用。從實驗結果得知，此方法有提升電池之效率作用，電池效率由6%提升至8%。

In this study, Al doped zinc oxide (AZO) films have been prepared by direct current (DC) magnetron sputtering technique with various substrate temperature in the range of RT ,100℃ ,150℃ ,200℃ ,250℃ on glass and N-Si substrates. The temperature of substrate at 250℃ exhibited the lowest electrical resistivity of 1.92×10-3 Ω-cm, carrier mobility of 9.27 cm2/Vs, highest carrier concentration of 3.51x1020 cm-3, and visible range (400-800 nm) transmittance about 80%. However the cell fabricated at 250℃ didn’t show the highest efficiency. Speculation the temperature made thick oxide layer (SiOx) leads to decreased efficiency, because the silicon dioxide increases the growth rate increases with temperature. Grown AZO thin film vacuum annealing in the sputter to passivation for interface states, indeed improve the efficiency effect 6% to8%.

目錄
中文摘要
Abstract
誌謝
目錄
第一章 前言
1-1研究動機
1-2研究目的
1-3論文架構
第二章 基礎理論
2-1氧化鋅之簡介
2-2電漿理論
2-3濺鍍原理
2-3.2偏壓濺鍍
2-3.3磁控濺鍍
2-3.4射頻濺鍍
2-4薄膜沉積原理
2-5太陽能電池基本理論
2-5.1光伏效應
2-5.2太陽光譜介紹
2-5.3太陽能電池等效電路圖
2-5.4元件效率損失因子
第三章 實驗方法
3-1實驗步驟
3-1.1基板清洗步驟
3-1.2薄膜沉積步驟
3-2薄膜量測分析
3-2.1霍爾效應量測(Hall effect measurement)
3-2.2場發射型掃描式電子顯微鏡(FE-SEM)分析
3-2.3 X光繞射(X-Ray Diffraction, XRD)分析
3-2.3紫外光-可見光光譜儀(UV-VIS)分析
3-3.4太陽光源模擬器電流-電壓(I-V)量測
第四章 結果與討論
4-1基板溫度對AZO薄膜與太陽能電池之影響
4-1.1 基板溫度對AZO薄膜特性的影響
4-1.2 基板溫度對AZO/n-Si太陽能電池特性的影響
4-2 改善AZO薄膜太陽能電池
4-2.1退火溫度對薄層AZO特性的影響
4-2.2對薄層AZO退火對AZO/n-Si太陽能電池特性的影
第五章 結論
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